M1B marking
Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
M1B marking
1N914 SOT-23
MMBT2222A
1n914 sot
marking 1p sot23
1P SOT-23
marking code m1b
MMBT2222ALT1G
1p sot
MMBT2222LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
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LMBT2222LT1G
LMBT2222ALT1G
S-LMBT2222LT1G
S-LMBT2222ALT1G
AEC-Q101
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
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LMBT2222LT1G
LMBT2222ALT1G
S-LMBT2222LT1G
S-LMBT2222ALT1G
AEC-Q101
OT-23
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MMBT2222ALT1G
Abstract: 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
MMBT2222ALT1G
1P SOT-23
1N914
MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222LT1G
MMBT2222LT3
MMBT2222LT3G
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m1b marking
Abstract: MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
m1b marking
MMBT2222ALT1G
1N914
MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222LT1G
MMBT2222LT3
MMBT2222LT3G
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1P marking
Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO
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LMBT2222LT1G
LMBT2222ALT1G
3000/Tape
OT-23
1P marking
LMBT2222ALT1G
m1b marking
LMBT2222LT1G
1N914
f250300
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MMBT2222LT1G
Abstract: MMBT2222ALT1G m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G 1P SOT-23
Text: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G
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MMBT2222LT1G,
MMBT2222ALT1G
MMBT2222LT1G
OT-23
MMBT2222LT1/D
MMBT2222LT1G
MMBT2222ALT1G
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT3G
MMBT2222LT3G
1P SOT-23
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MMBT2222ALT1G
Abstract: MMBT2222LT1G m1b marking 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G on semiconductor marking code 1P
Text: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G
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MMBT2222LT1G,
MMBT2222ALT1G
MMBT2222LT1G
OT-23
MMBT2222LT1/D
MMBT2222ALT1G
MMBT2222LT1G
m1b marking
1P SOT-23
1N914
MMBT2222
MMBT2222A
MMBT2222ALT3G
MMBT2222LT3G
on semiconductor marking code 1P
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marking code m1b
Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Text: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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MMBT2222L,
MMBT2222AL,
SMMBT2222AL
AEC-Q101
OT-23
MMBT2222L
marking code m1b
SMMBT2222ALT1G
SMMBT2222A
MMBT2222LT1-D
MMBT2222AL
on semiconductor marking code 1P
MMBT2222ALT1G
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Untitled
Abstract: No abstract text available
Text: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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MMBT2222L,
MMBT2222AL,
SMMBT2222AL
MMBT2222L
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
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LMBT2222LT1G
LMBT2222ALT1G
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage
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OT-23
MMBT2222LT1
OT-23
150mA
500mA
500mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR NPN SOT–23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
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OT-23
MMBT2222
o00mA
500mA,
150mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1
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MMBT2222
OT-23
MMBT2907)
500mA
150mA
150mA
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Untitled
Abstract: No abstract text available
Text: Photomicrosensor EE-SK3W-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • • • 18.8 15.8 0.8 PCB mounting type. With a red LED as an emitter element and a Photo-Darlington transistor as a detector element.
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E3HF1E1
Abstract: DS5E through beam sensor circuit diagram Infrared sensors for distance led receiver
Text: E3HF E3HF Thin-Profile 7-mm Photoelectric Sensor E3HF Thin Flat-pack Style • Just 7 mm 0.276 in thick ■ NPN transistor output switches 80 mA ■ Choose Light-ON or Dark-ON operation models ■ Top and side through holes make mounting easy ■ 3 pairs of focusing slits supplied with
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1-800-55-OMRON
E3HF1E1
DS5E
through beam sensor circuit diagram
Infrared sensors for distance
led receiver
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Untitled
Abstract: No abstract text available
Text: Thin Profile 7 mm Photoelectric Sensor E3HF Thin Flat-pack Style • ■ ■ ■ ■ Just 7 mm 0.276 in thick NPN transistor output switches 80 mA Choose Light-ON or Dark-ON operation models Top and side through holes make mounting easy 3 pairs of focusing slits supplied with
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1-800-55-OMRON
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EE-SJ3W-B
Abstract: No abstract text available
Text: Photomicrosensor EE-SJ3W-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • • • General-purpose model with a 3-mm-wide slot. PCB mounting type. With a red LED as an emitter element and a Photo-Darlington transistor as a detector element.
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E3C-jc4
Abstract: E3C-T1L amplifier in light sensor indicator circuit OMRON e3c jc4 OMRON PHOTOELECTRIC SWITCH AMPLIFIER photo-electric switch RELAY OMRON E3C-JC4P shock sensor amplifier light dark sensor circuit E3C-JB4P
Text: R Single-Point Optical Through-Beam Sensor E3C-T1 Compact, Narrow-View Sensor Is Ideal for Sensing Wafers — Using OMRON’s Unique “Pin-point” LED H 0.1-ms ultra-high-speed response H Safer and more cost-effective than comparable laser products H Use the E3C-T1 amplifier’s turbo feature
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1-800-55-OMRON
E000-E3-0
E3C-jc4
E3C-T1L
amplifier in light sensor indicator circuit
OMRON e3c jc4
OMRON PHOTOELECTRIC SWITCH AMPLIFIER
photo-electric switch
RELAY OMRON E3C-JC4P
shock sensor amplifier
light dark sensor circuit
E3C-JB4P
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EE-SX2088
Abstract: EE-SX2088-W1
Text: EE-SX2088 -W1 New Low-cost Photodarlington Transistor Output 0.5-mA output min. with only 1-mA forward LED current Mounting tabs to secure EE-SX2088 to PCB Best suited to drive CMOS IC EE-SX2088-W1 version provides easy, reliable solder-free connection
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EE-SX2088
EE-SX2088-W1
EE-SX2088
EE-SX2088-W1
1-800-55-OMRON
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EE-SX
Abstract: EE-SX2088 EE-SX2088-W1
Text: EE-SX2088 -W1 New Low-cost Photodarlington Transistor Output 0.5-mA output min. with only 1-mA forward LED current Mounting tabs to secure EE-SX2088 to PCB Best suited to drive CMOS IC EE-SX2088-W1 version provides easy, reliable solder-free connection
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EE-SX2088
EE-SX2088-W1
EE-SX2088
EE-SX2088-W1
1-800-55-OMRON
EE-SX
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sy201
Abstract: EE-SY201
Text: EE-SY201 Low-cost Reflective Photodarlington Output Requires Low Driving Input Only 5-mA forward current required by the LED Best suited to drive CMOS IC Incorporates an LED emitter and a Photodarlington transistor receiver Ordering Information Appearance
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EE-SY201
1-800-55-OMRON
sy201
EE-SY201
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E3JM-DS70M4T-US
Abstract: delay timer circuit diagram E3JM-10M4-US E3JM-DS70R4T-US delay timer e3jmds70m4tu E3JM-R4M4T-US E39-L53 E3JM-10M4 E3JM-DS70M4-US
Text: Universal Voltage Terminal Photoelectric E3JM Universal AC/DC Photoelectric Sensor with Built-in Timer • Easy-to-wire terminal block ■ Built-in timer offers selectable ON-delay, OFF-delay and one-shot ■ Relay or transistor output models ■ Polarized, through-beam and diffuse
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E3JM-10M4-US
E3JM-10S4-US
E3JM-10R4-US
E3JM-DS70M4-US
E3JM-DS70S4-US
E3JM-DS70R4-US
E39-R3
E39-R3
E39-RSB
E39-RSB
E3JM-DS70M4T-US
delay timer circuit diagram
E3JM-10M4-US
E3JM-DS70R4T-US
delay timer
e3jmds70m4tu
E3JM-R4M4T-US
E39-L53
E3JM-10M4
E3JM-DS70M4-US
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23
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10kii
10kii)
Q62702-C2385
OT-23
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