Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M2A MARKING Search Results

    M2A MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    M2A MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMD M2A transistor

    Abstract: 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15
    Text: SIEMENS fl23SbOS OOTbbOl 5 -V L ow -D ro p Fixed V oltage Regulator M2a T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection


    OCR Scan
    23SbOS Q67000-A9190 Q67006-A9173 Q67006-A9288 P-DSO-14-4 Q67006-A9192 35x45Â P-DSO-20-6 ffl52l20x SMD M2A transistor 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15 PDF

    M2A transistor

    Abstract: M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23
    Text: SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code


    Original
    SBT92 -300V SBT42 OT-23 KST-2041-002 -30mA -20mA, M2A transistor M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23 PDF

    M2A transistor

    Abstract: K 2078 SBT42F SBT92 SBT92F
    Text: SBT92F Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F Ordering Information Type NO. Marking SBT92F Package Code


    Original
    SBT92F SBT92 -300V SBT42F OT-23F KST-2078-000 -30mA -20mA, M2A transistor K 2078 SBT42F SBT92 SBT92F PDF

    M2A transistor

    Abstract: No abstract text available
    Text: SBT92 PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 2 SOT-23 Ordering Information Type NO. Marking


    Original
    SBT92 -300V SBT42 OT-23 KSD-T5C063-001 M2A transistor PDF

    2SK125

    Abstract: m2a marking
    Text: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4


    Original
    2SK1259 MA122 2SK125 m2a marking PDF

    M2A transistor

    Abstract: No abstract text available
    Text: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • MECHANICAL DATA • Case: SOT-323, Plastic


    Original
    MMBT2222AW 600mA OT-323, MIL-STD-750, 2010-REV M2A transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SBT92F PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F 2 SOT-23F Ordering Information Type NO. SBT92F


    Original
    SBT92F SBT92 -300V SBT42F OT-23F KSD-T5C089-000 PDF

    SMD M2A

    Abstract: SMD M2A transistor national semiconductor marking convention EIA-485/EIA smd 1034 smd marking zh transistor smd ZH DS96F173 DS96F175 EIA-485
    Text: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved


    Original
    DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 DS96F173 DS96F175 EIA-485 SMD M2A SMD M2A transistor national semiconductor marking convention EIA-485/EIA smd 1034 smd marking zh transistor smd ZH PDF

    AC163

    Abstract: SMD M2A SMD M2A transistor 54AC163 54ACT163 54ACT163DMQB 54ACT163LMQB 5962-9172301M2A 5962-9172301MEA m2a marking
    Text: National P/N 54ACT163 - 4-Bit Binary Counter, Synchronous Reset Products > Military/Aerospace > Logic > FACT ACT > 54ACT163 54ACT163 Product Folder 4-Bit Binary Counter, Synchronous Reset General Description Features Package & Models Datasheet Samples & Pricing


    Original
    54ACT163 54ACT163 54AC163 MN54ACT163-X MV54ACT163-X 12-Nov-98 AC163 SMD M2A SMD M2A transistor 54ACT163DMQB 54ACT163LMQB 5962-9172301M2A 5962-9172301MEA m2a marking PDF

    MA6X122

    Abstract: No abstract text available
    Text: Switching Diodes MA6X122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2


    Original
    MA6X122 MA6X122 PDF

    SMD M2A transistor

    Abstract: 54AC169 54AC169DMQB 54AC169LMQB 54ACT169 5962-9160301M2A 5962-9160301MEA
    Text: National P/N 54AC169 - 4-Stage Synchronous Bidirectional Counter Products > Military/Aerospace > Logic > FACT AC > 54AC169 54AC169 Product Folder 4-Stage Synchronous Bidirectional Counter General Description Features Datasheet Package & Models Samples & Pricing


    Original
    54AC169 54AC169 54ACT169 MN54AC169-X MV54AC169-X 6-Aug-98 SMD M2A transistor 54AC169DMQB 54AC169LMQB 5962-9160301M2A 5962-9160301MEA PDF

    SMD M2A

    Abstract: national semiconductor marking convention smd 1034 SMD M2A transistor DS96F173 DS96F175 EIA-485
    Text: DS96F173C/DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The


    Original
    DS96F173C/DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 DS96F173 DS96F175 EIA-485 SMD M2A national semiconductor marking convention smd 1034 SMD M2A transistor PDF

    SMD M2A

    Abstract: DS96F175 applicaTION NOTE SMD M2A transistor DS96F173 DS96F175 EIA-485 MC3486 application
    Text: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The


    Original
    DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 DS96F173 DS96F175 EIA-485 SMD M2A DS96F175 applicaTION NOTE SMD M2A transistor MC3486 application PDF

    SMD M2A transistor

    Abstract: DS96F173 DS96F175 EIA-485
    Text: General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The use of LFAST technology allows the DS96F173 and


    Original
    DS96F173 DS96F175 EIA-485 ds009627 SMD M2A transistor PDF

    national semiconductor marking convention

    Abstract: DS96F173CJ MAB08 SMD M2A transistor DS96F173 DS96F173C DS96F173M DS96F175 m2a marking DS96F175M
    Text: DS96F173C DS96F173M DS96F175C DS96F175M EIA-485 EIA-422 Quad Differential Receivers General Description The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard The DS96F173 and the DS96F175 offer improved


    Original
    DS96F173C DS96F173M DS96F175C DS96F175M EIA-485 EIA-422 DS96F173 DS96F175 EIA-485 national semiconductor marking convention DS96F173CJ MAB08 SMD M2A transistor m2a marking DS96F175M PDF

    MA4SD10

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density


    Original
    2002/95/EC) MA4SD10 MA4SD10 PDF

    MA4SD10

    Abstract: m2a marking
    Text: Schottky Barrier Diodes SBD MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density mounting  Low forward voltage VF


    Original
    MA4SD10 MA4SD10 m2a marking PDF

    M2A transistor

    Abstract: 2N2222A MMDT2222A SC70-6L
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original
    MMDT2222A 2N2222A OT-363 SC70-6L) 2002/95/EC MMDT2222A T/R13 M2A transistor SC70-6L PDF

    M2A transistor

    Abstract: 2N2222A MMDT2222A SC70-6L 2N2222A npn transistor
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original
    MMDT2222A 2N2222A OT-363 SC70-6L) MMDT2222A T/R13 M2A transistor SC70-6L 2N2222A npn transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original
    MMDT2222A 2N2222A OT-363 SC70-6L) 2002/95/EC MMDT2222A T/R13 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable


    Original
    MMDT2222A 2N2222A OT-363 SC70-6L) 2002/95/EC MMDT2222A T/R13 PDF

    96F175

    Abstract: DS96F175CJ
    Text: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The


    Original
    DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 DS96F173 DS96F175 EIA-485 96F175 DS96F175CJ PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features  Two isolated elements are contained in one package, allowing high-density


    Original
    2002/95/EC) MA4SD10 PDF

    SLD302WT

    Abstract: SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3
    Text: SLD302WT SONY 200mW High Power Laser Diode_ |For the availability of this product, please contact the sales office^ Description SLD302W T is a gain-guided, high-power laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip


    OCR Scan
    SLD302WT 200mW SLD302WT 180mW SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3 PDF