M2P diode
Abstract: smd 5736 led white smd zener color codes m2p zener catalogue automatic lamp incandescent impedance relay 24v omron smd top led lamps ST9141A1002 transistor smd 24c
Text: Indicator Rectangular M2P Large Rectangular-bodied Indicators • Excellent illumination with even surface brightness. ■ Three-color models (green, orange, red; chameleon lighting) included in lineup. Be sure to read Safety Precautions for All Pushbutton
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high
|
Original
|
DC100V
|
PDF
|
Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
|
Original
|
OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
|
PDF
|
marking M2P diode
Abstract: M2P diode diode m2r M2R DIODE MA741WK
Text: MA111 Schottky Barrier Diodes SBD MA741WA, MA741WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 Two elements are incorporated in MA741 (S-Mini type 3 pins) ● Low forward rise voltage VF and satisfactory wave detection efficiency
|
Original
|
MA111
MA741WA,
MA741WK
marking M2P diode
M2P diode
diode m2r
M2R DIODE
MA741WK
|
PDF
|
Diode Marking WA
Abstract: M2P diode M2R DIODE MA704WA
Text: MA111 Schottky Barrier Diodes SBD MA704WA, MA704WK Silicon epitaxial planer type Unit : mm +0.2 For switching For wave detection circuit 2.8 –0.3 +0.25 1.5 –0.05 Low forward rise voltage VF and satisfactory wave detection effi- 1.45 3 +0.1 ● 1 0.4 –0.05
|
Original
|
MA111
MA704WA,
MA704WK
MA704A
Diode Marking WA
M2P diode
M2R DIODE
MA704WA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage IFM 150 mA Single Double *
|
Original
|
MA3X704D,
MA3X704E
MA704WA,
MA704WK)
MA3X704A
MA704A)
|
PDF
|
marking m2p
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η
|
Original
|
MA3J741D,
MA3J741E
MA741WA,
MA741WK)
MA3J741
MA741)
marking m2p
|
PDF
|
M2P diode
Abstract: Double high-speed switching diode MA3S781D
Text: Schottky Barrier Diodes SBD MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features VR 30 V Peak reverse voltage VRM 30 V Single 0.12 − 0.02 Reverse voltage (DC) + 0.05 0.28 ± 0.05 Unit + 0.05 Rating
|
Original
|
MA3S781D
M2P diode
Double high-speed switching diode
MA3S781D
|
PDF
|
M2P diode
Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E
Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06
|
Original
|
MA3X704D,
MA3X704E
MA3X704D/E
MA3X704D
O-236
SC-59
Markin02
M2P diode
marking m2p
M2R DIODE
MINI 3PIN
MA3X704E
|
PDF
|
MA3J741D
Abstract: MA3J741E A1033 M2P diode
Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection
|
Original
|
MA3J741D,
MA3J741E
MA3J741s
MA3J741D
MA3J741E
A1033
M2P diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible
|
Original
|
MA3S781D,
MA3S781E
MA781WA,
MA781WK)
MA3S781
MA781)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package
|
Original
|
2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
|
PDF
|
MA3X704A
Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Text: Schottky Barrier Diodes SBD MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 0 to 0.1 Symbol Rating
|
Original
|
MA3X704D
MA704WA)
MA3X704E
MA704WK)
SC-59
MA3X704D
MA3X704D:
MA3X704E:
MA3X704A
MA3X704E
MA704A
MA704WA
MA704WK
|
PDF
|
MA3J741EG
Abstract: MA3J7410G MA3J741DG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name
|
Original
|
2002/95/EC)
MA3J741DG,
MA3J741EG
MA3J741DG
MA3J7410G
MA3J741EG
MA3J741DG
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J741DG 1: Cathode 1 2: Cathode 2
|
Original
|
2002/95/EC)
MA3J741DG,
MA3J741EG
MA3J7410G
MA3J741DG
MA3J741EG
|
PDF
|
MA3J741
Abstract: MA3J741D MA3J741E MA741 MA741WA MA741WK ir 0425
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 5˚
|
Original
|
2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
MA3J741
MA3J741D
MA3J741E
MA741
MA741WA
MA741WK
ir 0425
|
PDF
|
MA3X704D
Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"
Text: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature
|
Original
|
MA3X704D
MA3X704E
MA704WA
MA704WK)
MA3X704D/E
MA3X704D
O-236
SC-59
MA3X704E
MA704WK
panasonic ma diodes sc-59 Marking
marking m2p
panasonic "rs 466"
|
PDF
|
ma741
Abstract: marking m2p MA3J741 MA3J741D MA3J741E MA741WA MA741WK
Text: Schottky Barrier Diodes SBD MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η
|
Original
|
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
ma741
marking m2p
MA3J741
MA3J741D
MA3J741E
MA741WA
MA741WK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package
|
Original
|
2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
|
PDF
|
MA3S781
Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
Text: Schottky Barrier Diodes SBD MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible
|
Original
|
MA3S781D
MA781WA)
MA3S781E
MA781WK)
MA3S781
MA781)
MA3S781
MA3S781D
MA3S781E
MA781
MA781WA
MA781WK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d
|
Original
|
2002/95/EC)
MA3J741D
MA741WA)
MA3J741E
MA741WK)
MA3J741
MA741)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 3˚ (0.80)
|
Original
|
2002/95/EC)
MA3S781D
MA781WA)
MA3S781E
MA781WK)
MA3S781
MA781)
|
PDF
|
MA3S781
Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05
|
Original
|
2002/95/EC)
MA3S781D
MA781WA)
MA3S781E
MA781WK)
MA3S781
MA781)
MA3S781
MA3S781D
MA3S781E
MA781
MA781WA
MA781WK
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1
|
Original
|
2002/95/EC)
MA3X704D
MA704WA)
MA3X704E
MA704WK)
MA3X704A
MA704A)
|
PDF
|
