M2U PACKAGE Search Results

M2U PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPH4R008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

M2U PACKAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
M2U Package Abstract: No abstract text available Text: 2SK1605 Switching Diodes MA127 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating	Original	2SK1605 MA127 MA122 100mA M2U Package	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.4±0.2 4 • Four isolated elements contained in one package, allowing highdensity mounting	Original	2002/95/EC) MA6X127 MA127) MA6X122 MA122)	PDF
M2U Package Abstract: MA6X122 MA6X127 Text: Switching Diodes MA6X127 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM	Original	MA6X127 MA6X122) No10-2 M2U Package MA6X122 MA6X127	PDF
MA6X122 Abstract: MA6X1270G Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1270G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuit • Package • Four isolated elements contained in one package, allowing highdensity mounting	Original	2002/95/EC) MA6X1270G MA6X122 MA6X122 MA6X1270G	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 2.8+0.2 –0.3 6 5˚ 5 M Di ain sc te on na tin nc ue e/ d 4 • Four isolated elements contained in one package, allowing highdensity mounting	Original	2002/95/EC) MA6X127 MA127) MA6X122 MA122)	PDF
MA122 Abstract: MA127 MA6X122 MA6X127 Text: Switching Diodes MA6X127 MA127 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction	Original	MA6X127 MA127) MA6X122 MA122) MA122 MA127 MA6X122 MA6X127	PDF
MA6X122 Abstract: MA6X1270G Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1270G Silicon epitaxial planar type For switching circuit • Package • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction	Original	2002/95/EC) MA6X1270G MA6X122 MA6X122 MA6X1270G	PDF
MA122 Abstract: MA127 MA6X122 MA6X127 Text: Switching Diodes MA6X127 MA127 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage	Original	MA6X127 MA127) MA6X122 MA122) MA122 MA127 MA6X122 MA6X127	PDF
ln2054 Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20 Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g	Original	KG01420SX KG01421SX lN2789 KG01422SX 55HQ020 lN2128 lN2128A lN2129 lN2129A 20MA10 ln2054 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20	PDF
SOT23 marking sk Abstract: 11X16 marking SK SOT23 CAT93C66LI-G Text: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16	Original	CAT93C66, CAT93W66 CAT93C66 751BD 517AZ 511AK CAT93C66/D SOT23 marking sk 11X16 marking SK SOT23 CAT93C66LI-G	PDF
MA122 Abstract: MA127 MA6X122 MA6X127 Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d • Features 4 5 6 2 5˚ 1	Original	2002/95/EC) MA6X127 MA127) MA122 MA127 MA6X122 MA6X127	PDF
Untitled Abstract: No abstract text available Text: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16	Original	CAT93C66, CAT93W66 CAT93C66 CAT93W66 751BD CAT93C66/D	PDF
L2904AV Abstract: L358A Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R L2904AV L358A	PDF
l2904 Abstract: L358 L2904AV 21 ti m5p l2904v L358A LM258p equivalent L-358 marking l358 r sensing circuit using LM358 Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R LM2904) l2904 L358 L2904AV 21 ti m5p l2904v L358A LM258p equivalent L-358 marking l358 r sensing circuit using LM358	PDF

L358 Abstract: L2904V L2904 L2904AV LM358P L358A Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R L358 L2904V L2904 L2904AV LM358P L358A	PDF
L358 Abstract: No abstract text available Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R LM2904) L358	PDF
L358 Abstract: l2904 L2904AV LM258p equivalent LM358P LM358AP Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R LM2904) L358 l2904 L2904AV LM258p equivalent LM358P LM358AP	PDF
L2904 Abstract: No abstract text available Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068S L2904	PDF
Untitled Abstract: No abstract text available Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D Wide Supply Range: D description/ordering information 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ m NC 1OUT NC V CC+ NC co 4 3 2 1 20 19	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R	PDF
21 ti m5p Abstract: No abstract text available Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068S 21 ti m5p	PDF
ADM8843 Abstract: ADM8843ACPZ-REEL7 ADM8845 CP-16-3 MO-220-VEED-2 Text: Four White LED Backlight Driver ADM8843 FEATURES GENERAL DESCRIPTION Drives 4 LEDs from a 2.6 V to 5.5 V Li-Ion input supply 1x/1.5×/2× fractional charge pump to maximize power efficiency 0.3% typical LED current matching Up to 88% power efficiency over Li-Ion range	Original	ADM8843 ADM8843 MO-220-VEED-2 7-17-2008-A 16-Lead CP-16-3) ADM8843ACPZ-REEL7 ADM8843EB-EVALZ D05050-0-1/11 ADM8843ACPZ-REEL7 ADM8845 CP-16-3 MO-220-VEED-2	PDF
Untitled Abstract: No abstract text available Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain	Original	LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068S	PDF
A03 monolithic amplifier Abstract: Fairchild Imaging CCD CCD422A Fairchild Imaging Contact image sensor fairchild Text: LDRAL Fairchild Imaging Sensors CCD422A 1024 x 1024 Element Full Frame Image Sensor FEATURES • 1024x1024 Photosite Array ■ 1iyam x 1$om Pixel ■ 15.36mm x 15.36 mm Image Area ■ 100% Fill Factor ■ Mdti-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec	OCR Scan	1024x1024 CCD422Ais CCD422A 400nm. 557Tfllfl A03 monolithic amplifier Fairchild Imaging CCD Fairchild Imaging Contact image sensor fairchild	PDF
gn2011 Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? k iL tm , - is . i f H ■ 43 f t I L « T A B U S ' < 7 > r -	OCR Scan	tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT	PDF

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M2U PACKAGE Search Results

M2U PACKAGE Result Highlights (5)

M2U PACKAGE Datasheets Context Search

M2U Package

Untitled

M2U Package

MA6X122

Untitled

MA122

MA6X122

MA122

ln2054

SOT23 marking sk

MA122

Untitled

L2904AV

l2904

L358

L358

L358

L2904

Untitled

21 ti m5p

ADM8843

Untitled

A03 monolithic amplifier

gn2011