Untitled
Abstract: No abstract text available
Text: ESMT M52S32321A Operation Temperature Condition -40℃~85℃ SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by
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M52S32321A
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MAKING A10 BGA
Abstract: 90 ball VFBGA
Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Revision 1.2 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns)
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M52S32321A
32Bit
M52S32321A
MAKING A10 BGA
90 ball VFBGA
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Untitled
Abstract: No abstract text available
Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2006 Revision : 1.1 1/29 ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM
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M52S32321A
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M52S32321A
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Untitled
Abstract: No abstract text available
Text: ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.
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M52S32321A
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M52S32321A
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Untitled
Abstract: No abstract text available
Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Oct. 2006 Revision : 1.0 1/29 ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z
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M52S32321A
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M52S32321A
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Untitled
Abstract: No abstract text available
Text: ESMT M52S32321A Revision History : Revision 1.0 Oct. 31, 2006 - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Revision 1.2 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns)
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M52S32321A
M52S32321A
32Bit
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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PIC16F72 inverter ups
Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read
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element-14
element14.
element14,
PIC16F72 inverter ups
UPS inverter PIC16F72
PIC16F676 inverter hex code
16F877 with sd-card and lcd project
circuit diagram wireless spy camera
NH82801GB
xmega-a4
online ups service manual back-ups ES 500
ARM LPC2148 INTERFACING WITH RFID circuit diagram
realtek rtd 1186
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