4 BIT 2 INPUT MULTIPLEXER
Abstract: transistor m5c diode M5C CMLA01 M5C4 grid tie inverter schematic diagram OAI211 AOI21 OAI21 CU240
Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew
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diode M5C
Abstract: SOT-23 MARKING M5C
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD7000 SOT-23 SWITCHING DIODE FEATURES Dual switching diode 3 1 2 Marking: M5C Maximum Ratings @TA=25℃ Symbol Limits unit Reverse voltage VR 100 V Forward Current IF 200
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OT-23
MMBD7000
OT-23
100mA
diode M5C
SOT-23 MARKING M5C
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verilog DPLL
Abstract: BCM 2091 AN1522 signal path designer 380LB-1R5K IMC-1812 50N050 AN1509 Nippon capacitors
Text: AN1522 1 Fri Dec 15 11:40:36 1995 Order this document by AN1522/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1522 Analog Phase Locked Loop for H4CPlus, H4EPlus and M5C Series Arrays Prepared by: Roy Jones Edited by: Clarence Nakata Application Specific Integrated Circuits Division, Chandler AZ
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AN1522
AN1522/D
verilog DPLL
BCM 2091
AN1522
signal path designer
380LB-1R5K
IMC-1812
50N050
AN1509
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: セイコーインスツル スピンドル機種一覧 ー シ リ モータ 型式 胴径 [mm] ズ SSPG-010 T050 S SSPG-040 T100 S SSPG-045 T100 P G SSPG-045 T150 SSPG-075 T045 M18H M15H-UP M15H-T M11H-T A M11H-T(A)C H M8H-T(A) M8H-TC M5H-T(A) M5C-T(A)
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SSPG-010
SSPG-040
SSPG-045
SSPG-075
M15H-UP
M15H-T
M11H-T
ML30H-T
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diode M5C
Abstract: m5c diode
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. LMBD7000WT1G S-LMBD7000WT1G z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBD7000WT1G
S-LMBD7000WT1G
AEC-Q101
LMBD7000WT3G
S-LMBD7000WT3G
3000/Tape
10000/Tape
SC-70
diode M5C
m5c diode
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AN1553
Abstract: BUF32 BUF6
Text: MOTOROLA Order this document by AN1553/D SEMICONDUCTOR APPLICATION NOTE AN1553 Minimizing Skew Across Multiple Clock Trees in Gate Arrays Prepared by: Thomas Lüdeke Motorola, Munich CONTENTS 2. Multiplexing Clocks Page
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AN1553/D
AN1553
AN1553
BUF32
BUF6
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M5C SOT
Abstract: sot-23 diode m5c SMMBD7000LT1G diode M5C MMBD7000LT1G SOT-23 MARKING M5C marking m5c MARKING CODE M5C
Text: MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236
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MMBD7000LT1G,
SMMBD7000LT1G,
MMBD7000LT3G,
SMMBD7000LT3G
AEC-Q101
OT-23
O-236)
MMBD7000LT1/D
M5C SOT
sot-23 diode m5c
SMMBD7000LT1G
diode M5C
MMBD7000LT1G
SOT-23 MARKING M5C
marking m5c
MARKING CODE M5C
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M7A transistor
Abstract: transistor M7A transistor m5c M5C SOT transistor m6e M76 switch ADM1818-5ART-REEL ADM1817 ADM1816 ADM1818
Text: Microprocessor Reset Circuits ADM1810-ADM1813/ADM1815-ADM1818 FEATURES Reliable low cost voltage monitor with reset output Suitable for monitoring 2.5 V, 3 V, 3.3 V, and 5 V power supply voltages Reset threshold levels: 4.62 V, 4.35 V, 3.06 V, 2.88 V, 2.55 V,
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ADM1810-ADM1813/ADM1815-ADM1818
ADM1810,
ADM1812,
ADM1815,
ADM1817
ADM1811,
ADM1813,
ADM1816,
ADM1818
M7A transistor
transistor M7A
transistor m5c
M5C SOT
transistor m6e
M76 switch
ADM1818-5ART-REEL
ADM1817
ADM1816
ADM1818
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m5c diode
Abstract: diode M5C M5C SOT SDS7000 ROHS SDS7000
Text: SDS7000 GENERAL-PURPOSE SIGNAL AND SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc Total Device Dissipation FR-5 PD 225 mW 1.8 Board Note Derate above 25
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SDS7000
OT-23
062in
100uAdc)
20Vdc)
75Vdc)
m5c diode
diode M5C
M5C SOT
SDS7000 ROHS
SDS7000
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marking M5C
Abstract: diode M5C m5c diode M5C SOT MMBD7000 SOT-23 MARKING M5C
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD7000 SWITCHING DIODE SOT-23 FEATURES 1. 0 Power dissipation mW Tamb=25℃ 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 100 V VR: Operating and storage junction temperature range
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OT-23
MMBD7000
OT-23
100mA
marking M5C
diode M5C
m5c diode
M5C SOT
MMBD7000
SOT-23 MARKING M5C
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MMBD7000 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 350mW 100Volt
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MMBD7000
350mW
100Volt
OT-23
357K/W
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Untitled
Abstract: No abstract text available
Text: MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBD7000LT1G,
SMMBD7000LT1G,
MMBD7000LT3G,
SMMBD7000LT3G
MMBD7000LT1/D
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ADM1810
Abstract: No abstract text available
Text: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES VCC RST VCC TOLERANCE BIAS 150ms DELAY GND GENERAL DESCRIPTION ADM1811/ADM1816 5.5kΩ RST VCC TOLERANCE BIAS 150ms DELAY GND VCC The ADM181x range of voltage monitoring circuits is used in
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ADM1810
ADM1813/ADM1815
ADM1818
150ms
ADM1811/ADM1816
ADM181x
ADM181x
OT-23)
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ADM1810
Abstract: ADM1811 ADM1812 ADM1813 ADM1815 ADM1816 ADM1817 ADM1818 transistor m5c transistor m6e
Text: Microprocessor Reset Circuits ADM1810 to ADM1813/ADM1815 to ADM1818 FEATURES VCC RST VCC TOLERANCE BIAS 150ms DELAY GND GENERAL DESCRIPTION ADM1811/ADM1816 5.5kΩ RST VCC TOLERANCE BIAS 150ms DELAY GND VCC The ADM181x range of voltage monitoring circuits is used in
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ADM1810
ADM1813/ADM1815
ADM1818
150ms
ADM1811/ADM1816
ADM181x
ADM181x
OT-23)
ADM1811
ADM1812
ADM1813
ADM1815
ADM1816
ADM1817
ADM1818
transistor m5c
transistor m6e
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diode M5C
Abstract: m5c diode
Text: MMBD7000 Dual Small Signal Switching Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) t c u rodFeatures P New • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for automatic insertion Top View .056 (1.43) .052 (1.33)
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MMBD7000
O-236AB
OT-23)
OT-23
O-236AB)
E8/10K
037iant
diode M5C
m5c diode
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102 m5c
Abstract: 103 m5c
Text: Schottky Barrier Diodes SBD MA3SD05 Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Series connection • High-density mounting is possible • SS-Mini type 3-pin package
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MA3SD05
SC-89
PG-10N)
SAS-8130)
102 m5c
103 m5c
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m5c diode
Abstract: No abstract text available
Text: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd MMBD7000LT1 TECHNICAL DATA GENERAL-PURPOSE SIGNAL AND SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Reverse Voltage VR 100 Vdc Forward Current
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MMBD7000LT1
OT-23
062in
100uAdc)
50Vdc
m5c diode
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MMBD7000LT1-D
Abstract: No abstract text available
Text: ON Semiconductort Dual Switching Diode MMBD7000LT1 ON Semiconductor Preferred Device 3 1 2 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage Rating VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C
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MMBD7000LT1
236AB)
MMBD7000LT1-D
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Untitled
Abstract: No abstract text available
Text: Dual Switching Diode MMBD7000LT1 2 CATHODE 1 ANODE 3 3 CATHODE/ANODE 1 2 CASE MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current 318–08, STYLE11 SOT– 23 (TO–236AB) Symbol VR IF I FM(surge) Value 100 200 500
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MMBD7000LT1
STYLE11
236AB)
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marking M5C
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBD7000 Features • • • • x Low Current Leakage Low Cost Small Outline Surface Mount Package Case Material:Molded Plastic. UL Flammability
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MMBD7000
350mW
100Volt
OT-23
357K/W
marking M5C
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m5c diode
Abstract: M5C SOT M5C j MMBD7000LT1
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diode MMBD7000LT1 2 CATHODE 1 ANODE 3 3 CATHODE/ANODE 1 2 CASE MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current 318–08, STYLE11 SOT– 23 (TO–236AB) Symbol VR IF I FM(surge)
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MMBD7000LT1
STYLE11
236AB)
m5c diode
M5C SOT
M5C j
MMBD7000LT1
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m5c diode
Abstract: diode M5C MMBD7000
Text: Zowie Technology Corporation Dual Switching Diode 3 ANODE CATHODE 1 MMBD7000 2 1 2 3 CATHODE/ANODE SOT-23 MAXIMUM RATINGS Symbol Value Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC
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MMBD7000
OT-23
m5c diode
diode M5C
MMBD7000
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M5C SOT
Abstract: marking M5C mmbd7000 SOT-23 MARKING M5C
Text: MMBD7000 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 250 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-23 Dim. A A1 b c
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MMBD7000
OT-23
OT-23
J-STD-020D
2002/95/EC
M5C SOT
marking M5C
mmbd7000
SOT-23 MARKING M5C
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transistor m5c
Abstract: HP900 m5c transistor CMLA01 128160 MSC112 U046 motorola F00
Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock
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