M6 MARKING PNP Search Results

M6 MARKING PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)

M6 MARKING PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
S9015 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015	PDF
S9015 SOT-23 Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz	PDF
m6 marking transistor sot-23 Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6 Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6	PDF
fairchild marking codes sot-23 Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088 Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50	Original	KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component	PDF
surface mounted m6 transistor Abstract: sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES 2SA1611W Pb z High voltage VCEO=-50V. z Excellent HFE Linearity. z High DC current gain : hFE=200 typ. z Complementary to 2SC4177. Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.	Original	2SA1611W 2SC4177. OT-323 BL/SSSTF033 surface mounted m6 transistor sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp	PDF
M7 marking Abstract: marking of m7 diodes 2SA1611 marking m5 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03	Original	OT-323 OT-323 2SA1611 -100mA, -10mA M7 marking marking of m7 diodes 2SA1611 marking m5	PDF
WEJ Electronic Abstract: marking M4 marking of m7 diodes 2SA1611 marking m5 Text: 2SA1611 SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.15 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range	Original	2SA1611 OT-323 -100mA, -10mA WEJ Electronic marking M4 marking of m7 diodes 2SA1611 marking m5	PDF
2SA1611 Abstract: marking m5 90-18 m6 marking transistor Text: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current	Original	OT-323 OT-323 2SA1611 -100mA, -10mA 2SA1611 marking m5 90-18 m6 marking transistor	PDF
m6 marking transistor sot-23 Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812 Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812	PDF
m6 marking transistor sot-23 Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER	Original	OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER	Original	OT-23 2SA812 OT-23 2SC1623 -100mA, -10mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-323 2SA1611 2SC4177 -100mA, -10mA	PDF
m6 marking transistor Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03	Original	WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 Vol45 -100A, -100mA, -10mA m6 marking transistor	PDF

KST812M6 transistor Abstract: KST812M6 Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage	Original	KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M6 transistor KST812M6	PDF
smd transistor m6 Abstract: transistor smd marking m6 Text: Transistors SMD Type PNP Silicon Transistor 2SA733 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector-Base Voltage: VCBO=-60V 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base	Original	2SA733 OT-23 -10mA 100HZ -100mA, smd transistor m6 transistor smd marking m6	PDF
2SA1611 Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking Text: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L	Original	2SA1611 OT-323 2SC4177 2SA1611-M4 2SA1611-M6 2SA1611-M7 2SA1611-M5 -100mA, -10mA 2SA1611 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking	PDF
2SA1015LT1 Abstract: 2SC1815LT1 2SA1015L Text: 2SA1015LT1 PNP EPITAXIAL SILICON TRANSISTOR * Complement to 2SC1815LT1 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V Collector Current	Original	2SA1015LT1 2SC1815LT1 150mA -100uA 062in 2SA1015LT1 300uS -100mA 2SC1815LT1 2SA1015L	PDF
m7 smd diodes Abstract: smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611 Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50	Original	2SA1611 -100mA -10mA m7 smd diodes smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611	PDF
KST812M7 Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6 Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation	OCR Scan	KST812M3/M4/M5/M6/M7 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M7 marking m3 transistor KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6	PDF
M6 transistor Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6 Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation	OCR Scan	KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 M6 transistor KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation	OCR Scan	KST812M3/M4/M5/M6/M7 KST5088 KST812M	PDF
1D-S marking Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation	OCR Scan	KST812M3/M4/M5/M6/M7 OT-23 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 1D-S marking	PDF
MMBA812M5 Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6 Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE \| b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z - / MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier	OCR Scan	MMBA812M3 MMBA812M4 MMBA812M5 MMBA812M6 MMBA812M7 marking M3	PDF

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M6 MARKING PNP Search Results

M6 MARKING PNP Result Highlights (5)

M6 MARKING PNP Datasheets Context Search

S9015

S9015 SOT-23

Untitled

m6 marking transistor sot-23

fairchild marking codes sot-23

surface mounted m6 transistor

M7 marking

WEJ Electronic

2SA1611

m6 marking transistor sot-23

m6 marking transistor sot-23

Untitled

Untitled

m6 marking transistor

KST812M6 transistor

smd transistor m6

2SA1611

2SA1015LT1

m7 smd diodes

KST812M7

M6 transistor

Untitled

1D-S marking

MMBA812M5