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    M6 MARKING PNP Search Results

    M6 MARKING PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    M6 MARKING PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6

    fairchild marking codes sot-23

    Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
    Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50


    Original     		PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component

    surface mounted m6 transistor

    Abstract: sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES 2SA1611W Pb z High voltage VCEO=-50V. z Excellent HFE Linearity. z High DC current gain : hFE=200 typ. z Complementary to 2SC4177. Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SA1611W 2SC4177. OT-323 BL/SSSTF033 surface mounted m6 transistor sot-323 Marking M6 m6 marking transistor 2SA1611W 2SC4177 pnp transistor 6V marking m5 marking M6 transistor M6 Marking pnp

    M7 marking

    Abstract: marking of m7 diodes 2SA1611 marking m5
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03


    Original     		PDF OT-323 OT-323 2SA1611 -100mA, -10mA M7 marking marking of m7 diodes 2SA1611 marking m5

    WEJ Electronic

    Abstract: marking M4 marking of m7 diodes 2SA1611 marking m5
    Text: 2SA1611 SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.15 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		PDF 2SA1611 OT-323 -100mA, -10mA WEJ Electronic marking M4 marking of m7 diodes 2SA1611 marking m5

    2SA1611

    Abstract: marking m5 90-18 m6 marking transistor
    Text: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SA1611 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR PCM : 0.15 1. 25¡ À0. 05 1. 01 REF Power dissipation W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current


    Original     		PDF OT-323 OT-323 2SA1611 -100mA, -10mA 2SA1611 marking m5 90-18 m6 marking transistor

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


    Original     		PDF OT-23 2SA812 OT-23 2SC1623 -100mA, -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR PNP FEATURES SOT–323  High DC Current Gain  High Voltage  Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 2SA1611 2SC4177 -100mA, -10mA

    m6 marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to TP9014NND03


    Original     		PDF WBFBP-03B TP9015NND03 WBFBP-03B TP9014NND03 Vol45 -100A, -100mA, -10mA m6 marking transistor

    KST812M6 transistor

    Abstract: KST812M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M6 transistor KST812M6

    smd transistor m6

    Abstract: transistor smd marking m6
    Text: Transistors SMD Type PNP Silicon Transistor 2SA733 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Collector-Base Voltage: VCBO=-60V 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base


    Original     		PDF 2SA733 OT-23 -10mA 100HZ -100mA, smd transistor m6 transistor smd marking m6

    2SA1611

    Abstract: 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking
    Text: 2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES  High DC Current Gain  High Voltage  Complementary to 2SC4177 A L


    Original     		PDF 2SA1611 OT-323 2SC4177 2SA1611-M4 2SA1611-M6 2SA1611-M7 2SA1611-M5 -100mA, -10mA 2SA1611 2SA1611M6 marking M6 Diode marking m7 M7 marking 2SC4177 2SA1611-M7 marking m5 600 marking

    2SA1015LT1

    Abstract: 2SC1815LT1 2SA1015L
    Text: 2SA1015LT1 PNP EPITAXIAL SILICON TRANSISTOR * Complement to 2SC1815LT1 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V Collector Current


    Original     		PDF 2SA1015LT1 2SC1815LT1 150mA -100uA 062in 2SA1015LT1 300uS -100mA 2SC1815LT1 2SA1015L

    m7 smd diodes

    Abstract: smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611
    Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50


    Original     		PDF 2SA1611 -100mA -10mA m7 smd diodes smd m7 smd marking m5 M7 diodes kexin smd marking m4 m6 smd m7 smd MARKING marking of m7 diodes marking smd m7 2SA1611

    KST812M7

    Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M7 marking m3 transistor KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6

    M6 transistor

    Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 M6 transistor KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 KST5088 KST812M

    1D-S marking

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST812M3/M4/M5/M6/M7 OT-23 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 1D-S marking

    MMBA812M5

    Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6
    Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE | b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z *- /* MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier


    OCR Scan     		PDF MMBA812M3 MMBA812M4 MMBA812M5 MMBA812M6 MMBA812M7 marking M3