fairchild marking codes sot-23
Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50
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KST812M3/M4/M5/M6/M7
OT-23
KST5088
fairchild marking codes sot-23
marking of m7 diodes
diode M7
marking M3
KST812M6
Diode marking m7
m7 diode
M7 marking codes
M7 component
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S9015
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100mA,
-10mA
30MHz
S9015
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S9015 SOT-23
Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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OT-23
S9015
OT-23
S9014
-100A,
-100mA,
-10mA
S9015 SOT-23
m6 marking transistor sot-23
marking M6
S9015
s9015 transistor
s9015 SOT23 transistor
transistor S9014
s9014 equivalent
S9015 M6
transistor SOT23 S9015
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QCA100AA100
Abstract: DIODE b2x
Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 （M） 15 （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit：A （Tj＝25℃ unless otherwise specified）
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QCA100AA100
E76102
AMP110
10max
VCEX1000V
1sec10sec
QCA100AA100
DIODE b2x
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QCA100AA120
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA100AA120 UL;E76102 （M） 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit：A （Tj＝25℃ unless otherwise specified）
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QCA100AA120
E76102
AMP110
10max
VCEX1200V
1sec10sec
QCA100AA120
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QCA150AA120
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA150AA120 UL;E76102 （M） 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit：A （Tj＝25℃ unless otherwise specified）
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QCA150AA120
E76102
AMP110
10max
VCEX1200V
QCA150AA120
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330MAX
Abstract: Diode B2x QCA150AA120
Text: TRANSISTOR MODULE QCA150AA120 UL;E76102 （M） 108max 93±0.5 15 C1 25.0 3-M6 L=10max E1 B1 B1X •Maximum Ratings AMP110 t=0.5 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage
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QCA150AA120
E76102
108max
AMP110
10max
VCEX1200V
330MAX
Diode B2x
QCA150AA120
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SQD300BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） SQD300BA60 UL;E76102 （M） 108max 93±0.5 ● Low B EX 11.013.0 21.0 E 2-M4 x7.5 C 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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SQD300BA60
E76102
108max
VCEX600V
hFE750
IC300A,
63max
SQD300BA60
trr200ns)
di/dt-300A/
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SQD300AA100
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 （M） 108max 93±0.5 4-φ6.5 ● Low B EX 11.013.0 21.0 E C B 2-M4 x7.5 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Moter Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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SQD300AA100
E76102
108max
VCEX1000V
IC300A,
63max
SQD300AA100
1000ms10sec
1msec100msec
IB16A
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QCA200BA60
Abstract: Diode B2x
Text: TRANSISTOR MODULE（Hi-β） QCA200BA60 UL;E76102 （M） 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1
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QCA200BA60
E76102
AMP110
10max
VCEX600V
hFE750
di/dt-200A/
50msec50sec
sec50msec
QCA200BA60
Diode B2x
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SQD300AA120
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD300AA120 UL;E76102 （M） 108max 93±0.5 4-φ6.5 ● Low B EX 11.013.0 21.0 E C B 2-M4 x7.5 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Moter Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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SQD300AA120
E76102
108max
VCEX1200V
IC300A,
63max
SQD300AA120
100msec10sec
1ms100ms
IB16A
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SQD300A40
Abstract: SQD300A60 D 1380 Transistor transistor A 935
Text: TRANSISTOR MODULE SQD300A40/60 UL;E76102 （M） 108max 93±0.5 4-φ6.5 ● Low BX B EX 11.013.0 21.0 E 2-M4 x7.5 C 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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SQD300A40/60
E76102
108max
VCEX400/600V
IC300A,
63max
SQD300A
50msec50sec
IB16A
VCC300V
SQD300A40
SQD300A60
D 1380 Transistor
transistor A 935
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QCA150AA100
Abstract: No abstract text available
Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 （M） 108max 93±0.5 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit：A （Tj＝25℃ unless otherwise specified）
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QCA150AA100
E76102
108max
AMP110
10max
VCEX1000V
100ms10sec
1msec100msec
QCA150AA100
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QCA200A60
Abstract: OCA200 QCA200A40 AMP110 QCA200A-60
Text: TRANSISTOR MODULE QCA200A40/60 UL;E76102 （M） 108max 93±0.5 E2 B2 E2 B1X E1 B1 25.0 E2 B2X B2 C2E1 25.0 14.0 B1 C1 3-M6 L=10max AMP110 t=0.5 30.0max 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application
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QCA200A40/60
E76102
108max
10max
AMP110
IC200AVCEX400/600V
QCA200
OCA200
QCA200A60
OCA200
QCA200A40
AMP110
QCA200A-60
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4500a
Abstract: transistor VCE 900V
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 300 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 300 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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gate-emitt50
4500a
transistor VCE 900V
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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4500a
Abstract: GA170DL
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 300 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 300 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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CM300DU
Abstract: mitsubishi electric igbt module CM300DU-24H igbt GATE VOLTAGE FOR 300A ,400V IGBT ac switch circuit LQG2
Text: MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two
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CM300DU-24H
CM300DU
mitsubishi electric igbt module
CM300DU-24H
igbt GATE VOLTAGE FOR 300A ,400V
IGBT ac switch circuit
LQG2
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CM300DU-24H
Abstract: LQG2 vces
Text: MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two
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CM300DU-24H
CM300DU-24H
LQG2
vces
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GA170DL
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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CM350DU-5F
Abstract: igbt mitsubishi 520 ac IGBT module 700a forklift transistor 350A
Text: MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE A B TC Measured Point K 4 - Mounting Holes E H D J C F CM H R 3 - M6 NUTS R Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
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CM350DU-5F
CM350DU-5F
igbt mitsubishi 520 ac
IGBT module 700a
forklift
transistor 350A
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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CM200DU-24H
Abstract: CM200DU24H
Text: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A F D S 4 - Mounting Holes H B E J U H T CM Q Q 3 - M6 Nuts K K K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two
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CM200DU-24H
CM200DU-24H
CM200DU24H
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MG300M1FK1
Abstract: DIODE S3L DIODE TP S3L
Text: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode
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