M68AR512DL
Abstract: TFBGA48
Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512DL
TFBGA48
M68AR512DL
TFBGA48
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TFBGA48
Abstract: No abstract text available
Text: M68AR512D 8 Mbit 512Kb x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65V to 1.95V ■ 512Kb x16 bit SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512D
512Kb
TFBGA48
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512DL
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M68AR512D 8 Mbit 512Kb x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65V to 1.95V ■ 512Kb x16 bit SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512D
512Kb
TFBGA48
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M68AR512DL
Abstract: TFBGA48
Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM TARGET SPECIFICATION FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512DL
TFBGA48
M68AR512DL
TFBGA48
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M68AR512D
Abstract: TFBGA48
Text: M68AR512D 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512D
TFBGA48
M68AR512D
TFBGA48
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bga 6x8
Abstract: M68AR512DN TFBGA48
Text: M68AR512DN 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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M68AR512DN
TFBGA48
bga 6x8
M68AR512DN
TFBGA48
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BGA-Z28
Abstract: No abstract text available
Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V TRI-STATE COMMON I/O
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M68AR512DL
TFBGA48
BGA-Z28
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TSOP44 Package
Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments
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