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    M68AR512DL Search Results

    M68AR512DL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M68AR512DL STMicroelectronics 8 MBIT (512K X16) 1.8V ASYNCHRONOUS SRAM Original PDF

    M68AR512DL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M68AR512DL

    Abstract: TFBGA48
    Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512DL TFBGA48 M68AR512DL TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512DL TFBGA48

    M68AR512DL

    Abstract: TFBGA48
    Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM TARGET SPECIFICATION FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512DL TFBGA48 M68AR512DL TFBGA48

    BGA-Z28

    Abstract: No abstract text available
    Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V TRI-STATE COMMON I/O


    Original     		PDF M68AR512DL TFBGA48 BGA-Z28

    TFBGA48

    Abstract: No abstract text available
    Text: M68AR512D 8 Mbit 512Kb x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65V to 1.95V ■ 512Kb x16 bit SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512D 512Kb TFBGA48 TFBGA48

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M68AR512D 8 Mbit 512Kb x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65V to 1.95V ■ 512Kb x16 bit SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns, 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512D 512Kb TFBGA48

    M68AR512D

    Abstract: TFBGA48
    Text: M68AR512D 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512D TFBGA48 M68AR512D TFBGA48