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    M8050-TRANSISTOR NPN Search Results

    M8050-TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M8050-TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M8050

    Abstract: m8050 NPN equivalent M8050 equivalent
    Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11


    Original     		PDF M8050 200mW OT-23 M8050-L M8050ation 800mA, 30MHz 25-Nov-2010 M8050 m8050 NPN equivalent M8050 equivalent

    M8050

    Abstract: No abstract text available
    Text: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11


    Original     		PDF M8050 200mW OT-23 M8050-L 800mA, 30MHz 800mA M8050

    M8050-TRANSISTOR

    Abstract: M8050 m8050 NPN equivalent M8050-TRANSISTOR NPN
    Text: M8050 M8050 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF M8050 100mA 800mA 800mA, 30MHz M8050-TRANSISTOR M8050 m8050 NPN equivalent M8050-TRANSISTOR NPN

    m8050

    Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 M8050 100mA 800mA 800mA, 30MHz m8050 y11 transistor M8050-TRANSISTOR transistor y11 sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 M8050 OT-23

    M8050-TRANSISTOR

    Abstract: datasheet of ic 555 IC 555 M8050-TRANSISTOR NPN datasheet ic 555 m8050 f-30MHz ic 4700
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TRANSISTOR （ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V BR CBO : 40


    Original     		PDF M8050 O--92 30MHz 270TYP 050TYP M8050-TRANSISTOR datasheet of ic 555 IC 555 M8050-TRANSISTOR NPN datasheet ic 555 m8050 f-30MHz ic 4700

    m8050

    Abstract: M8050-TRANSISTOR To92 transistor m8050 NPN equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TO-92 TRANSISTOR NPN FEATURES Power dissipation 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. COLLECTOR Symbol Parameter 2. BASE Value Units VCBO


    Original     		PDF M8050 100mA 800mA 800mA, 30MHz m8050 M8050-TRANSISTOR To92 transistor m8050 NPN equivalent

    y11 transistor

    Abstract: transistor y11 sot-23 .y11 transistor
    Text: M8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF M8050 OT-23 OT-23 100mA 800mA 800mA, 30MHz y11 transistor transistor y11 sot-23 .y11 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation m W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: 1 A Collector-base voltage


    Original     		PDF OT-23 OT-23 M8050 100mA 800mA 800mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR m W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage 40 V V(BR)CBO:


    Original     		PDF OT-23 OT-23 M8050 100mA 800mA 800mA, 30MHz

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    FX3U-48M

    Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
    Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)


    Original     		PDF D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649