MA27 Search Results

MA27D270G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA27D270G Silicon epitaxial planar type For super high speed switching • Package ■ Features • Code SSSMini2-F3 • Pin Name 1: Anode 2: Cathode • Small reverse current IR

MA27077

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA27077 Silicon epitaxial planar type Unit: mm For band switching 0.27+0.05 –0.02 0.10+0.05 –0.02 VR 35 V Forward current IF 100 mA Operating ambient temperature * Topr

MA27E02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA27E02 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For cellular phone 0.13+0.05 –0.02 Rating Unit Reverse voltage Maximum peak reverse voltage VR 20

MA27P01

Contextual Info: PIN diodes MA27P01 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For high frequency switch 0.13+0.05 –0.02 Symbol Rating Unit Reverse voltage VR 60 V Forward current IF 100 mA Power dissipation * PD 150 mW Junction temperature Tj 150 °C Storage temperature

MA27077

Contextual Info: Band Switching Diodes MA27077 Silicon epitaxial planar type Unit: mm For band switching 0.27+0.05 –0.02 0.10+0.05 –0.02 VR 35 V Forward current IF 100 mA Operating ambient temperature * Topr −25 to +85 °C Storage temperature Tstg −55 to +125 °C Note *: Maximum ambient temperature during operation.

stv3h

Abstract: S3016R S3016-R MA27T-A STV-3H STV2H MA27T-B MA29-B MA27W-A STV-2H
Contextual Info: - 276 - Ä A Æ mma » iï ftft £ MA27T-A MA27T-B MA27W-A MA27W-B MA28-A MA28-B MA28T-A MA28K-A MA29-A MA29-B MA29Q-A MA29Q-B MA29T-A MA29T-B MA29W-A MA29W-B MA30-A MA30-B MA30W-A m ov-B MV—1 MV—11 MV—103 MV-104V S3016-R tt « m fâT fò T fôT P nW>

STV2H

Abstract: STV-3H SV03YS MA27T-B STV3H STV-3 STV-2H S3016R KT 117B MA28
Contextual Info: - 276 - Ä A Æ mma » iï ftft £ tt « PSM m MA27T-A MA27T-B MA27W-A MA27W-B MA28-A MA28-B MA28T-A MA28K-A MA29-A MA29-B MA29Q-A MA29Q-B MA29T-A MA29T-B MA29W-A MA29W-B MA30-A MA30-B MA30W-A mov-B MV—1 MV—11 MV—103 MV-104V S3016-R ST05-16 ST05-27 S TV-2H 0

Contextual Info: Variable Capacitance Diodes MA27V02 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.15 max. Rating 5°

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V15 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 Rating Unit VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA277280G Silicon epitaxial planar type For switching circuits • Package ■ Features • Code SSSMini2-F3 • Pin Name 1: Anode 2: Cathode • High-density mounting is possible

Contextual Info: Variable Capacitance Diodes MA27V07 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.15 max. Rating 5°

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V23 Silicon epitaxial planar type For VCO Unit: mm 0.27+0.05 –0.02 • Features 0.10+0.05 –0.02 Reverse voltage VR 6 V Junction temperature Tj 125 °C Storage temperature

Contextual Info: Variable Capacitance Diodes MA27V09 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 min. 0.15 max. Rating 5°

Contextual Info: Variable Capacitance Diodes MA27V14 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Rating 0.52±0.03 Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V03 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 Rating Unit Reverse voltage VR 6 V Junction temperature Tj 125 °C Storage temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V22 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d 0.60±0.05 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA27784 Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.27+0.05 –0.02 0.13+0.05 –0.02 0.52±0.03 Symbol Rating Unit VR 30 V Repectitive peak reverse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Diodes MA27P07 Silicon planar type For high frequency switch 0.12+0.05 –0.02 Reverse voltage VR 60 V Forward current IF 100 mA Power dissipation PD 150 mW Junction temperature Tj 150 °C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27V20 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For VCO 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d 0.60±0.05 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA27077 Silicon epitaxial planar type Unit: mm For band switching 0.27+0.05 –0.02 0.10+0.05 –0.02 VR 35 V Forward current IF 100 mA Operating ambient temperature * Topr

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA27376 Silicon epitaxial planar type Unit: mm For VCO 0.27+0.05 –0.02 0.10+0.05 –0.02 VR 6 V Junction temperature Tj 125 °C Tstg −55 to +125 °C ea s ht e v

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA27D27 Silicon epitaxial planar type For super high speed switching 0.60±0.05 • Features 0.20±0.05 Unit: mm 0.12+0.05 –0.02 2 0.27+0.05 –0.02 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA27E02 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For cellular phone 0.13+0.05 –0.02 Reverse voltage Maximum peak reverse voltage Forward current

029V

Contextual Info: New Achieving lower electrical power for smaller mobile phones 100mA Class Low VF Schottky barrier diode MA2SD29/MA27D29 „ Overview Unit: mm MA2SD29/MA27D29 is a new developed 100mA Class Low VF Schottky barrier diode, realizing one of the lowest VF in the industry as VF=0.29V max. at IF=10mA .