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    Panasonic Electronic Components MA3X704A0L

    DIODE SCHOTTKY 30V 30MA MINI3-G1
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    MA3X704A0L Reel 3,000
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    MA3X704A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA3X704A Panasonic Diode Original PDF
    MA3X704A Panasonic Silicon epitaxial planar type Original PDF
    MA3X704A Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3X704A0L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.03A MINI3 Original PDF

    MA3X704A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)


    Original     		PDF 2002/95/EC) MA3X704 MA704) MA3X704A MA704A) MA3X704

    MA3X704

    Abstract: MA3X704A MA704 MA704A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10


    Original     		PDF 2002/95/EC) MA3X704 MA704) MA3X704A MA704A) MA3X704 MA3X704A MA704 MA704A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Mini type of MA3X704A (MA704A)


    Original     		PDF 2002/95/EC) MA3J741 MA741) MA3X704A MA704A)

    MA3X704A

    Abstract: MA6X718 MA704A MA718
    Text: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a


    Original     		PDF MA6X718 MA718) MA3X704A MA704A) SC-74 MA3X704A MA6X718 MA704A MA718

    MA3J741

    Abstract: MA3X704A MA704A MA741
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF 2002/95/EC) MA3J741 MA741) MA3X704A MA704A) MA3J741 MA3X704A MA704A MA741

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic


    Original     		PDF MA3J741 MA741) MA3X704A MA704A) Marki20

    marking m1k

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF MA3X704, MA3X704A MA704, MA704A) MA3X704 MA3X704A marking m1k

    MA704

    Abstract: MA3X704 MA3X704A MA704A diode M1K
    Text: Schottky Barrier Diodes SBD MA3X704 , MA3X704A (MA704,MA704A) Silicon epitaxial planar type Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Unit VR 15 V 15 IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature


    Original     		PDF MA3X704 MA3X704A MA704 MA704A) O-236 SC-59 MA3X704 MA3X704A MA704A diode M1K

    VR-103 generator

    Abstract: diode M1K marking m1k M1K MARKING MA3X704 MA3X704A M1L marking
    Text: Schottky Barrier Diodes SBD MA3X704, MA3X704A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Symbol Rating Unit VR 15 V MA3X704A 15 IFM 150 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59


    Original     		PDF MA3X704, MA3X704A MA3X704 O-236 SC-59 VR-103 generator diode M1K marking m1k M1K MARKING MA3X704 MA3X704A M1L marking

    MA3J745

    Abstract: MA3X704A MA704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3J745 MA745) MA3X704A MA704A) MA3J745 MA3X704A MA704A MA745

    electronic power generator using transistor

    Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short


    Original     		PDF MA3J745 MA745) MA3X704A MA704A) electronic power generator using transistor Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745

    MA3X704

    Abstract: MA3X704A MA704 MA704A
    Text: Schottky Barrier Diodes SBD MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF MA3X704 MA704) MA3X704A MA704A) MA3X704 MA3X704A MA704 MA704A

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3J745 MA745) MA3X704A MA704A)

    MA3X704

    Abstract: MA3X704A MA704 MA704A
    Text: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF MA3X704, MA3X704A MA704, MA704A) MA3X704 SC-59 MA3X704 MA3X704A MA704 MA704A

    MA717

    Abstract: MARKING 103 MA3X704A MA3X717 MA704A
    Text: Schottky Barrier Diodes SBD MA3X717 (MA717) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)


    Original     		PDF MA3X717 MA717) MA3X704A MA704A) MA717 MARKING 103 MA3X704A MA3X717 MA704A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF 2002/95/EC) MA3J741 MA741) MA3X704A MA704A)

    MA3J745

    Abstract: MA3X704A MA745
    Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 • Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short


    Original     		PDF MA3J745 MA745) MA3X704A) MA3J745 MA3X704A MA745

    MA3J745

    Abstract: MA3X704A
    Text: Schottky Barrier Diodes SBD MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short


    Original     		PDF MA3J745 MA3X704A) MA3J745 MA3X704A

    MA741

    Abstract: MA3J741 MA3X704A
    Text: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η)


    Original     		PDF MA3J741 MA741) MA3X704A MA741 MA3J741 MA3X704A

    ma741

    Abstract: MA3J741 MA3X704A MA704A
    Text: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic


    Original     		PDF MA3J741 MA741) MA3X704A MA704A) ma741 MA3J741 MA3X704A MA704A

    MA3X704

    Abstract: MA3X704A MA704 MA704A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)


    Original     		PDF 2002/95/EC) MA3X704 MA704) MA3X704A MA704A) MA3X704 MA3X704A MA704 MA704A

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a


    Original     		PDF MA6X718 MA718) MA3X704A MA704A)

    MA3J741

    Abstract: MA3X704A M1L marking
    Text: Schottky Barrier Diodes SBD MA3J741 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic


    Original     		PDF MA3J741 MA3X704A MA3J741 MA3X704A M1L marking

    MA3X704

    Abstract: MA3X704A MA704 MA704A marking m1k
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)


    Original     		PDF 2002/95/EC) MA3X704 MA704) MA3X704A MA704A) MA3X704 MA3X704A MA704 MA704A marking m1k