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    MA3ZD12 Search Results

    MA3ZD12 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA3ZD12 Panasonic Silicon epitaxial planar type Original PDF
    MA3ZD12 Panasonic Diode Original PDF
    MA3ZD12 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3ZD1200L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 0.7A SMINI3 Original PDF
    MA3ZD120GL Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 0.7A SMINI3 Original PDF

    MA3ZD12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code 105 m5e

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Forward current (Average) I F(AV) = 700 mA rectification is possible


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    PDF 2002/95/EC) MA3ZD120G marking code 105 m5e

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is


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    PDF 2002/95/EC) MA3ZD12 SC-79

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD


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    PDF 2002/95/EC) XN09D58 XN9D57 MA3ZD12

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is


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    PDF 2002/95/EC) MA3ZD12 SC-79

    marking code 105 m5e

    Abstract: MA3ZD120G MA3ZD120 marking code m5e
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) MA3ZD120G marking code 105 m5e MA3ZD120G MA3ZD120 marking code m5e

    2SA2046

    Abstract: MA3ZD12 XN09D61
    Text: Composite Transistors XN09D61 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Basic Part Number • 2SA2046 + MA3ZD12


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    PDF XN09D61 2SA2046 MA3ZD12 2SA2046 MA3ZD12 XN09D61

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) I F(AV) = 700 mA rectification is


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    PDF 2002/95/EC) MA3ZD12

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode M Di ain sc te on na tin nc


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    PDF 2002/95/EC) MA3ZD120G

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    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125


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    PDF MA3ZD12

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN09D58 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN09D57 + MA3ZD12 SBD 2 V Collector-emitter voltage (Base open) VCEO −15 V Emitter-base voltage


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    PDF XN09D58 XN09D57 MA3ZD12

    MA3ZD12

    Abstract: 104 m5e
    Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition


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    PDF MA3ZD12 MA3ZD12 104 m5e

    MA3ZD12

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features


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    PDF 2002/95/EC) MA3ZD12 MA3ZD12

    104 m5e

    Abstract: MA3ZD12
    Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature


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    PDF MA3ZD12 104 m5e MA3ZD12

    MA3ZD12

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features


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    PDF 2002/95/EC) MA3ZD12 MA3ZD12

    marking code 105 m5e

    Abstract: MA3ZD120G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an W is k y


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    PDF 2002/95/EC) MA3ZD120G marking code 105 m5e MA3ZD120G

    105 m5e

    Abstract: 104 m5e M5E MARKING MA3ZD12
    Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition


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    PDF MA3ZD12 105 m5e 104 m5e M5E MARKING MA3ZD12

    Untitled

    Abstract: No abstract text available
    Text: MA3ZD12 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.3+0.1 –0 • Features 0.15+0.1 –0.05 5˚ • S-mini type 3-pin package • Allowing to rectify under IF(AV = 700 mA) condition • Low forward rise voltage V F (V F < 0.45 V)


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    PDF MA3ZD12 Symb12

    MA3ZD12

    Abstract: XN09D58
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD 2


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    PDF 2002/95/EC) XN09D58 XN9D57 MA3ZD12 MA3ZD12 XN09D58

    marking code yr

    Abstract: No abstract text available
    Text: MA3ZD12W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 Features • Low forward voltage • Allowing high density mounting 2 1 Marking Code: YR Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 25 V VR 20 V Average Forward Current


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    PDF MA3ZD12W marking code yr

    105 m5e

    Abstract: MA3ZD12
    Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 700 mA rectification is possible • Low forward voltage: VF < 0.45 V • High-density mounting is possible


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    PDF MA3ZD12 105 m5e MA3ZD12

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    S-Mini

    Abstract: SSMini s-mini 2-pin package
    Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes


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    PDF MA2Q705) S-Mini SSMini s-mini 2-pin package