IC 3263
Abstract: medium power high voltage transistor transistor c 3263 SILICON npn POWER TRANSISTOR c 869
Text: Preliminary Specifications Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MA4T56800 V2.00 Features ● ● ● High Output Power, 23 dBm P1dB @ 1 GHz High Gain-Bandwidth Product, 4 GHz fT High Power Gain, |S21E| = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz
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Original
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PDF
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MA4T56800
MA4T568
MA4T56800,
MA4T56800
MA4T568000
IC 3263
medium power high voltage transistor
transistor c 3263
SILICON npn POWER TRANSISTOR c 869
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transistor b 595
Abstract: No abstract text available
Text: AlfcCOH Preliminary Specifications M an A M P com pany Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MA4T56800 V 2 .0 0 Features • High O utput Power, 23 dBm PldB @ 1 GHz • High Gain-Bandwidth Product, 4 GHz fT • High Power Gain, I S21E T = 12 dB @ 1 GHz
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OCR Scan
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PDF
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MA4T56800
MA4T568
MA4T56800,
operati8761
MA4T56800
MA4T568000
transistor b 595
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b 595 transistor
Abstract: No abstract text available
Text: Preliminary Specifications M an AMP com pany Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MA4T56800 V2.00 Features • High Output Power, 23 dBm PldB @ 1 GHz • High Gain-Bandwidth Product, 4 GHz fT • High Power Gain, I S21E 12 = 12 dB @ 1 GHz
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OCR Scan
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PDF
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MA4T56800
MA4T568
MA4T56800,
MA4T56800
MA4T568000
b 595 transistor
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