Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65)
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2002/95/EC)
MA3X704
MA704)
MA3X704A
MA704A)
MA3X704
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MA3X704
Abstract: MA3X704A MA704 MA704A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10
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2002/95/EC)
MA3X704
MA704)
MA3X704A
MA704A)
MA3X704
MA3X704A
MA704
MA704A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Mini type of MA3X704A (MA704A)
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2002/95/EC)
MA3J741
MA741)
MA3X704A
MA704A)
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MA3X704A
Abstract: MA6X718 MA704A MA718
Text: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Three isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a
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MA6X718
MA718)
MA3X704A
MA704A)
SC-74
MA3X704A
MA6X718
MA704A
MA718
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MA3J741
Abstract: MA3X704A MA704A MA741
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η
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2002/95/EC)
MA3J741
MA741)
MA3X704A
MA704A)
MA3J741
MA3X704A
MA704A
MA741
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J741 (MA741) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Mini type of MA3X704A (MA704A) • Low forward voltage VF and good wave detection efficiency η • Small temperature coefficient of forward characteristic
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MA3J741
MA741)
MA3X704A
MA704A)
Marki20
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marking m1k
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η
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MA3X704,
MA3X704A
MA704,
MA704A)
MA3X704
MA3X704A
marking m1k
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MA704
Abstract: MA3X704 MA3X704A MA704A diode M1K
Text: Schottky Barrier Diodes SBD MA3X704 , MA3X704A (MA704,MA704A) Silicon epitaxial planar type Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Unit VR 15 V 15 IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature
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MA3X704
MA3X704A
MA704
MA704A)
O-236
SC-59
MA3X704
MA3X704A
MA704A
diode M1K
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MA3J745
Abstract: MA3X704A MA704A MA745
Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)
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MA3J745
MA745)
MA3X704A
MA704A)
MA3J745
MA3X704A
MA704A
MA745
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Untitled
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA732 Silicon epitaxial planer type Unit : mm For the switching circuit For wave detection circuit Anode Low forward rise voltage VF, optimum for low-voltage rectification (Low VF type of MA704A) 1 2 Fast reverse recovery time trr, optimum for high-frequency rectification
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MA111
MA732
MA704A)
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electronic power generator using transistor
Abstract: Japanese Transistor Data Book diode 104 MA3J745 MA3X704A MA704A MA745
Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A) • Optimum for high frequency rectification because of its short
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MA3J745
MA745)
MA3X704A
MA704A)
electronic power generator using transistor
Japanese Transistor Data Book
diode 104
MA3J745
MA3X704A
MA704A
MA745
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MA3X704
Abstract: MA3X704A MA704 MA704A
Text: Schottky Barrier Diodes SBD MA3X704 (MA704), MA3X704A (MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η
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MA3X704
MA704)
MA3X704A
MA704A)
MA3X704
MA3X704A
MA704
MA704A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J745 (MA745) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Low forward voltage VF , optimum for low voltage rectification • Low VF type of MA3X704A (MA704A)
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MA3J745
MA745)
MA3X704A
MA704A)
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MA3X704
Abstract: MA3X704A MA704 MA704A
Text: Schottky Barrier Diodes SBD MA3X704, MA3X704A (MA704, MA704A) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF and good wave detection efficiency η
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Original
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MA3X704,
MA3X704A
MA704,
MA704A)
MA3X704
SC-59
MA3X704
MA3X704A
MA704
MA704A
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MA151K
Abstract: ma5z270 ma151 OH009 VHE HALL AMA950 AMA997 AMA999 MA704A MA8056
Text: Diodes Composite Elements , Hall Elements • Composite Elements Type No. Vr If (V) (mA) VF max. Co typ. If (V) Vr (PF) (mA) 3 0 /4 0 A M A 999 3 0 /1 0 0 1.0 P ack ag e t|T typ. (ns) B asic Type No. If 1.5 30 No. (mA) (V) 1.0 1.0 MA704A MA151K 10 Mini Type (4 pins)
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AMA999
MA704A
MA151K
AMA997
MA8056
AMA950
MA8075-M
MA8430
MA5Z270
ma151
OH009
VHE HALL
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kt 207
Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
81MIN
26MAX
fiJ44
kt 207
ma741
MA723
420C
610C
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ma741
Abstract: MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
890-45MHz)
MA740
MA741
MA723
420C
610C
MA700
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MA717
Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Text: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
1MA721Â
MA744
MA745
MA717
MA723
ma741
420C
610C
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
i15-0Â
25MIN
MA723
ma741
420C
610C
MA700
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
890-45MHz)
MA740
MA741
MA723
420C
610C
MA700
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610A
Abstract: MA723 ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
Text: - Ä fií H SSlOl HS S 1 0 2 H SU88 H SU276 MA2S728 MA2S784 MA4S713 M A 700 MA700A MA 704 MA704A MA704WA MA704WK M A 707 M A 713 MA714 M A 715 M A 716 M A 717 MA717WA £ tt Vr V (V) 30 30 70 10 3 30 30 30 15 30 15 30 30 15 30 15 30 B aL B ÍL B Ä B Ä fôT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
890-45MHz)
MA740
MA741
610A
MA723
420C
610C
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MA723
Abstract: 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700 MA700A
Text: - Ä fií £ tt « Yrrm V HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA B aL BÍL B Ä B Ä fôT fóT t&T 30 MA723 MA724 MA726 MA727 MA728 » T fâT fôT 30 30 fôT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
20MIN
20MIN
MA723
420C
610C
MA700
MA700A
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MA723
Abstract: ma741 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713 MA700
Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA MA717H MA721 MA721WA MA721M MA722 MA723 MA724 MA726 MA727 MA728 £ tt Vr V (V) B aL B ÍL B Ä B Ä fôT fóT
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OCR Scan
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PDF
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HSS102
HSU88
HSU276
30MHz)
MA2S784
MA4S713
MA745WA
MA745WK
MA723
ma741
420C
610C
MA700
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marking M1P
Abstract: No abstract text available
Text: Panasonic Schottky Barrier Diodes SBD MA714 Silicon epitaxial planer type For the switching circuit For wave detection circuit • Features • Two elements are incorporated in MA704A (of a type differing in direction) • Low forward rise voltage Vf , optimum for low-voltage rectification
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OCR Scan
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PDF
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MA714
MA704A
30MHz
2000MHz
N-50BU
marking M1P
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