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    Panasonic Electronic Components MA740

    DIODE - DATASHEET REFERENCE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MA740 48
    • 1 $2.6
    • 10 $2.6
    • 100 $1.43
    • 1000 $1.43
    • 10000 $1.43
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    MA740 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA740 Panasonic Silicon epitaxial planar type Original PDF
    MA740 Panasonic Diode Original PDF
    MA740 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MA740 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF

    MA740 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MA3X721

    Abstract: MA3X740 MA721 MA740
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2


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    2002/95/EC) MA3X740 MA740) MA3X721 MA721) MA3X721 MA3X740 MA721 MA740 PDF

    MA3X721

    Abstract: MA3X740 MA721 MA740
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc


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    2002/95/EC) MA3X740 MA740) MA3X721 MA721) MA3X721 MA3X740 MA721 MA740 PDF

    MA3X721

    Abstract: MA3X740 MA721 MA740
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2


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    2002/95/EC) MA3X740 MA740) MA3X721 MA721) MA3X721 MA3X740 MA721 MA740 PDF

    IR 50

    Abstract: JIS C 1102 diodes ir MARKING 103 MA3X721 MA3X740 MA721 MA740
    Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series


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    MA3X740 MA740) MA3X721 MA721) IR 50 JIS C 1102 diodes ir MARKING 103 MA3X721 MA3X740 MA721 MA740 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series


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    MA3X740 MA740) MA3X721 MA721) 150nteed PDF

    MA740

    Abstract: Marking m3c
    Text: 2SK1606 Schottky Barrier Diodes SBD MA740 Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current Single Double Single Double Single Double VRRM Storage temperature


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    2SK1606 MA740 200mA 100mA MA740 Marking m3c PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2


    Original
    2002/95/EC) MA3X740 MA740) MA3X721 MA721) PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series


    Original
    MA3X740 MA740) MA3X721 MA721) PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series


    Original
    MA3X740 MA740) MA3X721 MA721) PDF

    MA3X721

    Abstract: MA3X740 MA721 MA740
    Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series


    Original
    MA3X740 MA740) MA3X721 MA721) MA3X721 MA3X740 MA721 MA740 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2


    Original
    2002/95/EC) MA3X740 MA740) MA3X721 MA721) PDF

    ETC 529 DIODE

    Abstract: MA3X740 MA740 panasonic ma diodes sc-59 Marking
    Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Repetitive peak reverse voltage Average forward current Single Peak forward current Single VR 30 V VRRM 30 V IF(AV) 200 mA Double*1 Single Non-repetitive peak forward surge current*2 Double*1


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    MA3X740 MA740) O-236 SC-59 ETC 529 DIODE MA3X740 MA740 panasonic ma diodes sc-59 Marking PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    MA740C

    Abstract: uA740 mA740h UA740 8 pin MA740 MA740HC A740HC UA740C Fairchild uA740 A741
    Text: MA740 FET INPUT OPERATIONAL AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS GENERAL DESCRIPTION — The jiA740 Is a high performance monolithic FET Input Operational Amplifier constructed using the Fairchild Planar* epitaxial process. It is intended for a wide range of


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    MA740 uA740 jiA740 applic--55 /uA740 MA740C mA740h UA740 8 pin MA740 MA740HC A740HC UA740C Fairchild uA740 A741 PDF

    MA740C

    Abstract: A740C A740C-T MA740C-T uA740C MA740 voltage follower schematic
    Text: MA740C-T DESCRIPTION FEATURES The nA740C is a special purpose high per­ formance operational am plifier utilizing a FET input stage for high input impedance and low input current. • • • • • • • The device features internal compensation, standard pinout, wide differential and com ­


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    MA740C-T uA740C A740C-T juA740C-T 100mV 100pf, mA740C MA740C A740C A740C-T MA740C-T MA740 voltage follower schematic PDF

    A740C

    Abstract: 740hc U740 740C PA740 UA740C/D fet input 740hc 740M JIA740 MA740
    Text: MA740 FET Input Operational Amplifier DlNnnEPiiOlL FEATURES • H ig h in p u t im p e d a n c e . . . 1 M f i • N o fre q u en c y co m pensation required • S h o rt-c irc u it p ro te c tio n GENERAL DESCRIPTION • O f fs e t v o lta g e n u ll c a p a b ilit y


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    PDF

    ma702

    Abstract: uA740 UA715 MOTOROLA 5051 A715 MA776 MC1539 A740 JUA709 JUA748
    Text: M AN U FAC TU RER Fairchild Semiconductor Intersil P A R T N U M B ER H A R R IS E Q U IV A L E N T N O T ES MA702 HA-2620/2625 C2 /XA709 HA-909/911 B2 ;uA715 HA-2520/2525 B2 juA725 HA-2700/2705 A3 C2 MA727 HA-2900/2905 MA734 HA-2111/2311 C2 MA740 HA-2060/2065


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    MA702 JUA709 uA715 juA725 MA727 MA734 juA741 MA747 JUA748 JUA772 uA740 MOTOROLA 5051 A715 MA776 MC1539 A740 JUA709 PDF

    ma702

    Abstract: UA715 H12-200 A740 JUA709 JUA748 JUA772 MA727 MA747 MA776
    Text: MANUFACTURER Fairchild Semiconductor Intersil PART NUMBER HARRIS EQUIVALENT NOTES MA702 HA-2620/2625 C2 /XA709 HA-909/911 B2 ;uA715 HA-2520/2525 B2 juA725 HA-2700/2705 A3 C2 MA727 HA-2900/2905 MA734 HA-2111/2311 C2 MA740 HA-2060/2065 B2 juA741 HA-909/911,2600/2605


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    MA702 JUA709 uA715 juA725 MA727 MA734 juA741 MA747 JUA748 JUA772 H12-200 A740 JUA709 MA776 PDF

    lm709

    Abstract: LH740A LM101A LM741 MA740
    Text: LH740A LH740A FET Input Operational Amplifier 22 Absolute Maximum Ratings General Description Supply Vottage ±22V Maximum Power Dissipation SOOmW Differential Input Voltage ± 5V Input Voltage ±15V Short Circuit Duration Continuous Operating Temperature Range


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    LH740A LM741, LM709. LM101A, MA740 100pA RETS740AX, -55aC 150BC lm709 LM101A LM741 MA740 PDF

    MA740C

    Abstract: A7-40Y mA740h uA740C UA740 A740 ma740hc la740 fairchild ua741 a740y
    Text: ¿iA740 ^ FET IN PU T OP ER A TIO N A L AMPLIFIER F A IR C H IL D LIN EA R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — T h e ^ A 7 4 0 is a h ig h p e r fo rm a n c e m o n o lith ic F E T I n p u t O p e ra tio n a l A m p lif ie r c o n s tru c te d u sing th e F a ir c h ild P la n a r* e p ita x ia l p rocess. I t is in te n d e d f o r a w id e ra n ge o f


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    A740y mA740 /iA740 FR60UENCY MA740C A7-40Y mA740h uA740C UA740 A740 ma740hc la740 fairchild ua741 a740y PDF

    kt 207

    Abstract: ma741 MA723 420C 610C HSS102 HSU276 HSU88 MA2S784 MA4S713
    Text: - Ä fií HSSlOl HSS102 HSU88 HSU276 MA2S728 MA2S784 MA4S713 MA700 MA700A MA 704 MA704A MA704WA MA704WK MA707 MA713 MA714 MA715 MA716 MA717 MA717WA £ tt B aL B ÍL B Ä B Ä fôT fóT t&T « Yrrm Vr V (V) 30 tôT MA723 MA724 MA726 MA727 MA728 » T fâT


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    HSS102 HSU88 HSU276 30MHz) MA2S784 MA4S713 81MIN 26MAX fiJ44 kt 207 ma741 MA723 420C 610C PDF

    ad quad op amp

    Abstract: 715C MA740 ma747e mA776C
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA19 MA715C L-OA20 14 □ COMP 2B COMP 1A p 2 13 3 12 4 11 14 1 n c I □ 2 COMP IB I CASCODEI □ - 'N p | OUTPUT - IN [= NC □ e NC □ 7 nc -.Np 5 + |N 11 p v + >>L □ NC I FREQ COMP □ 3 □ OUT □ 6 v -C


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    L-OA19 L-OA20 mA741C/E L-OA21 MA747C/E L-OA22 MA301A, mA748, mA777C L-OA23 ad quad op amp 715C MA740 ma747e mA776C PDF

    MA301A

    Abstract: A307 A348 mA748c OA21 715C MA709C mA324 MA3401 MA748
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA1 /iA302, mA310, mA714C/E/L L-OA2 MA307 L-OA3 mA308, mA308A NC vMetal Can and Mini-Dip Connection Shown L-OA4 MÄ702C L-OA5 mA709C IN FREQ COMP L-OA6 MÄ725C/E n cK F T TAB V- Metal Can and Mini-Dip Connection Shown


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    mA302, mA310, mA714C/E/L mA307 MA709C mA308, mA308A 725C/E mA318, MAF355, MA301A A307 A348 mA748c OA21 715C MA709C mA324 MA3401 MA748 PDF