KMA200
Abstract: KMZ43 "Angle Sensor" kma199 KMA199E Angle Sensors KMZ41 X3T-KMZ43 "Angle Sensors" active suspension sensor
Text: Magnetoresistive angle sensor systems Cover all the angles in your automotive systems NXP’s magnetoresistive sensor technology is the superior choice for automotive measurement systems. Features such as lack of wear, long term stability and direct measurement combine to deliver highly
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X3T-KMZ43
KMA200
KMZ43
"Angle Sensor"
kma199
KMA199E
Angle Sensors
KMZ41
X3T-KMZ43
"Angle Sensors"
active suspension sensor
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"Angle Sensor"
Abstract: AMR sensor multiturn angle sensor CAN protocol angle sensor angle position sensors bourns multiturn CAN BUS SENSOR Bosch CAN protocol basics
Text: Bourns Sensors GmbH Non-contact multiturn angle sensor P 8539 1. Introduction 3. Electrical Interface The device is based on three magnetoresistive AMR sensor chips elements; each of them converts an angle position of a permanent magnet into two analog sinusoidal signals.
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D-82054
"Angle Sensor"
AMR sensor
multiturn angle sensor
CAN protocol
angle sensor
angle position sensors
bourns multiturn
CAN BUS SENSOR
Bosch
CAN protocol basics
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MR2A16A
Abstract: MR2A16ATS35C
Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The
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MR2A16A
16-Bit
MR2A16A
304-bit
MR2A16ATS35C
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Untitled
Abstract: No abstract text available
Text: EV2A08A 512K x 8-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)
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EV2A08A
EV2A08A
304-bit
1024B
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE MRAM 128Kx16-SOP 3DMR2M16VS2427 Magnetoresistive Ram MODULE 2 Mbit MRAM organized as 128Kx16 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Organized as 128Kx16. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access
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128Kx16-SOP
3DMR2M16VS2427
128Kx16
128Kx16.
MMXX00000000XXX
3DFP-0427-REV
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE MRAM 128Kx8-SOP 3DMR1M08VS1426 Magnetoresistive Ram MODULE 1 Mbit MRAM organized as 128Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Organized as 128Kx8. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access
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128Kx8-SOP
3DMR1M08VS1426
128Kx8
128Kx8.
MMXX00000000XXX
3DFP-0426-REV
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AA747
Abstract: anisotropic magnetoresistive circuit Design AA-74 Rotary Sensor 360 IEC60134 electrical field sensor AA747AHA magnetic speed sensor circuit diagram AA747
Text: AA747 MagnetoResistive Angle Sensor Data sheet The AA747 is an angular sensor based on the Anisotropic Magneto Resistive AMR effect. The Sensor contains two galvanically separated Wheatstone bridges, at a relative angle of 45° to one another. A rotating magnetic field in the sensor plane delivers two sinusoidal
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AA747
AA747
AA747AHA
AA747AHA-LB
anisotropic magnetoresistive circuit Design
AA-74
Rotary Sensor 360
IEC60134
electrical field sensor
AA747AHA
magnetic speed sensor circuit diagram AA747
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ldr sensor
Abstract: sensor LDR sensor LDR diagram ISO 11452-2 ISO 11452-5 KMA200 led ldr sensor inductive sensor oscillator circuit "Angle Sensor" Angle Sensor kma200
Text: KMA200 Programmable angle sensor Rev. 07 — 18 July 2008 Product data sheet 1. Product profile 1.1 General description The KMA200 is an angle sensor system. The MagnetoResistive MR element and the mixed signal Integrated Circuit (IC) are integrated in one package. This angle system is
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KMA200
KMA200
32-bit
ldr sensor
sensor LDR
sensor LDR diagram
ISO 11452-2
ISO 11452-5
led ldr sensor
inductive sensor oscillator circuit
"Angle Sensor"
Angle Sensor kma200
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Untitled
Abstract: No abstract text available
Text: CDS4100 MagnetoResistive Current Sensor IPN = 100 A Data sheet The CDS4000 current sensor family is designed for highly dynamic electronic measurement of DC, AC, pulsed and mixed currents with integrated galvanic isolation. The MagnetoResistive technology enables an excellent dynamic response without the hysteresis
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CDS4100
CDS4000
CDS4100ACC
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Untitled
Abstract: No abstract text available
Text: CDS4150 MagnetoResistive Current Sensor IPN = 150 A Data sheet The CDS4000 current sensor family is designed for highly dynamic electronic measurement of DC, AC, pulsed and mixed currents with integrated galvanic isolation. The MagnetoResistive technology enables an excellent dynamic response without the hysteresis
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CDS4150
CDS4000
CDS4150ACC
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cms2005
Abstract: No abstract text available
Text: CMS2005 MagnetoResistive Current Sensor IPN = 5 A Data sheet The CMS2000 current sensor family is designed for highly dynamic electronic measurement of DC, AC, pulsed and mixed currents with integrated galvanic isolation. The MagnetoResistive technology enables an excellent dynamic response without the
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CMS2005
CMS2000
CMS2005-SP3
CMS2005-SP10
cms2005
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HMC1052L
Abstract: HMC1053 AN215 AMR sensor HMC105X TLC072 10-PIN HMC1051 HMC1051Z HMC1051ZL HMC1052
Text: 1, 2 and 3 Axis Magnetic Sensors HMC1051/HMC1052/HMC1053 The Honeywell HMC1051, HMC1052 and HMC1053 are magnetoresistive sensors designed for low field magnetic sensing. Various packaging options have been created from the basic HMC1052 sensor chip to create 1, 2 and 3-axis magneto-resistive
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HMC1051/HMC1052/HMC1053
HMC1051,
HMC1052
HMC1053
HMC1052
HMC105X
HMC105X
HMC1052L
HMC1053
AN215 AMR sensor
TLC072
10-PIN
HMC1051
HMC1051Z
HMC1051ZL
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Untitled
Abstract: No abstract text available
Text: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.4. Shipped in tray 225 pcs per pack
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MS-0040
MS-0040
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RC4458
Abstract: 4558 PIN RC4558 Application Note magnetometer digital Wheatstone Bridge amplifier Tilt Sensors degree 3 axis HMC1052L HMC1053 4558 opamp d 4558
Text: 1, 2 and 3 Axis Magnetic Sensors HMC1051/HMC1052/HMC1053 The Honeywell HMC1051, HMC1052 and HMC1053 are magnetoresistive sensors designed for low field magnetic sensing. Various packaging options have been created from the basic HMC1052 sensor chip to create 1, 2 and 3-axis magneto-resistive
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HMC1051/HMC1052/HMC1053
HMC1051,
HMC1052
HMC1053
HMC1052
HMC105X
HMC105X
RC4458
4558 PIN
RC4558 Application Note
magnetometer digital
Wheatstone Bridge amplifier
Tilt Sensors degree 3 axis
HMC1052L
HMC1053
4558 opamp
d 4558
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Untitled
Abstract: No abstract text available
Text: Magnetic sensors MDRM 18U9501 Magnetoresistive angle sensors dimension drawing 30 SW 24 40 M18 x 1 general data photo angular range 160° linear resolution 0,09 ° system accuracy ± 0,25 % temperature drift ± 0,06 % Full Scale working distance max. 2 mm
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18U9501
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LM404-2
Abstract: amp623 LM324b HMC2003 HMC1002 HMC1021 HMC1001 serial "compass Sensor" lm440 HMC1021S
Text: SENSOR PRODUCTS APPLICATIONS Compassing Navigation Systems 1- and 2-Axis Magnetic Sensors HMC1001 / 1002 HMC1021 / 1022 Attitude Reference Traffic Detection Medical Devices C onfigured as a 4-element wheatstone bridge, these magnetoresistive sensors convert magnetic fields to
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HMC1001
HMC1021
HMC1021S
16-Pin
HMC1022
LM404-2
amp623
LM324b
HMC2003
HMC1002
serial "compass Sensor"
lm440
HMC1021S
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ZTX605 equivalent
Abstract: lm440 HMC1021Z HMC2003 HMC10XX HMC1021 AMP04 FLUXGATE HMC1022 lm440 voltage reference
Text: SENSOR PRODUCTS APPLICATIONS Compassing Navigation Systems 1 & 2 Axis Magnetoresistive Microcircuits Attitude Reference Traffic Detection Medical Devices Non-Contact Switch Not actual size HMC1001 / 1002 HMC1021 / 1022 C onfigured as a 4-element wheatstone bridge, these
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HMC1001
HMC1021
HMC1021S
16-Pin
HMC1022
ZTX605 equivalent
lm440
HMC1021Z
HMC2003
HMC10XX
AMP04
FLUXGATE
HMC1022
lm440 voltage reference
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preamplifier 6 Channel
Abstract: No abstract text available
Text: TLS24302, TLS24306 2- AND 6-CHANNEL MAGNETORESISTIVE/THIN-FILM READ/WRITE PREAMPLIFIERS SQHS007A - DECEMBER 8, 1995- REVISED DECEMBER 15,1995 • Current-Bias/Current-Sense Architecture • Fabricated Using LinlMPACT-C BiCMOS Technology • Operates From a Single 5-V Supply ±10%
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TLS24302,
TLS24306
SQHS007A
4073252/A
ATbl724
preamplifier 6 Channel
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Untitled
Abstract: No abstract text available
Text: SENSOR PRODUCTS APPLICATIONS Compassing Navigation Systems 1 & 2 Axis Magnetoresistive Microcircuits HMC1021 /1022 Attitude Reference Virtual Reality onfigured as a 4-legged Traffic Detection wheatstone bridge, these c Proximity Detection highly sensitive sensors
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HMC1021
10E-4
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Untitled
Abstract: No abstract text available
Text: b3E D 4SS1Ô72 DDDIGTS HONEYI i l ELL / S NON-VOLATILE RAM Honeywell IH0N3 Ô2fl S E C Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1E15 cycles)
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HC7116
300mW
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HMC1002
Abstract: HONYS005
Text: Honeywell Magnetic Products TWO-AXIS MAGNETORESISTIVE MICROCIRCUIT HMC1002 GENERAL DESCRIPTION Honeywell's two axis magnetoresistive MR microcircuit consists of two matched transducers in a single package. Each transducer is placed with perpendicular orientation to
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HMC1002
HMC1002
HONYS005
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Untitled
Abstract: No abstract text available
Text: SIEMENS Differential Magnetoresistive Sensor FP 210 D 250-22 Features • High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable Typical applications
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Q65210
D250-W5
0HS00071
QHS00090
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Untitled
Abstract: No abstract text available
Text: SIEMENS Differential Magnetoresistive Sensor FP 210 L 100-22 Features • High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable ~ i Typical applications
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GPX06772
Q65210-L100-W4
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Magnetic field sensor KM110B/2 DESCRIPTION The KM110B/2 is a sensitive magnetic field sensor, employing the magnetoresistive effect in thin-film permalloy. A Ferroxdure FXD100 magnet mounted on the back of the sensor package provides an auxiliary field of
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KM110B/2
KM110B/2
FXD100
MBD882
MBD885
KM110B/2.
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