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    MARK 2L SOT-23 6 Search Results

    MARK 2L SOT-23 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    MARK 2L SOT-23 6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		MMBT5401 OT-23 PDF

    MMBT5401

    Abstract: mark B1 sot23
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		MMBT5401 OT-23 MMBT5401 mark B1 sot23 PDF

    2N5401 fairchild

    Abstract: 2N5401 SOT-23
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*


    Original     		2N5401 MMBT5401 2N5401 OT-23 OT-23 2N5401 fairchild 2N5401 SOT-23 PDF

    2N5401 fairchild

    Abstract: No abstract text available
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401 fairchild PDF

    mmbt5401

    Abstract: No abstract text available
    Text: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted


    Original     		MMBT5401 OT-23 mmbt5401 PDF

    2n5401y

    Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401YBU 2N5401RM 2N5401CH1TA 2n5401y 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 5401 GM PDF

    2N5401 SOT-23

    Abstract: mark 2L SOT-23 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
    Text: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 OT-23 2N5401 2N5401 SOT-23 mark 2L SOT-23 2N5401 fairchild transistor 2N5401 MMBT5401 PDF

    2N5401 SOT-23

    Abstract: mark 2L SOT-23 mark 641 mark 641 sot dc transistor 2N5401 2N5401 MMBT5401
    Text: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 OT-23 2N5401 2N5401 SOT-23 mark 2L SOT-23 mark 641 mark 641 sot dc transistor 2N5401 MMBT5401 PDF

    2N5401 SOT-23

    Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401 SOT-23 2N5401 fairchild transistor 2N5401 MMBT5401 PDF

    2N5401

    Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103 PDF

    mark 2L SOT-23

    Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 2N5401RA 2N5401BU 2N5401RM 2N5401TF mark 2L SOT-23 MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6 PDF

    mark 2L SOT-23

    Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 2N5401 OT-23 mark 2L SOT-23 2N5401 SOT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor PDF

    2148F

    Abstract: transistor 2N5401 2N5401 MMBT5401 2N5401 SOT-23
    Text: N 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5401 MMBT5401 OT-23 2N5401 2148F transistor 2N5401 MMBT5401 2N5401 SOT-23 PDF

    sot23 t04

    Abstract: mark t04 sot 2n5401 sot 23
    Text: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.


    OCR Scan     		2N5401 MMBT5401 2N5401 OT-23 bS01130 00407Cn LSD113D sot23 t04 mark t04 sot 2n5401 sot 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: IN TE G R A TE D C IR C U ITS I3MP\ilnliiT SCN2681T Dual asynchronous receiver/transmitter DUART Product specification Supersedes data of 1995 May 01 IC19 Data Handbook Philips Semiconductors 1998 Sep 04 PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		SCN2681T SCN2681 SCN2681T SCN2681. PDF

    Untitled

    Abstract: No abstract text available
    Text: MB91550 Series 32-bit Microcontroller FR Family FR81S MB91F552 Data Sheet Full Production Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume


    Original     		MB91550 32-bit FR81S MB91F552 MB91F552 DS705-00015 DS705-00015-1v0-E, PDF

    Untitled

    Abstract: No abstract text available
    Text: S ta n d a rd P r o d u c t PM I I 1 PMC-Sierra, Inc. ^^ PM 5371 TU D X SONET/SDH TRIBUTARY UNIT CROSS CONNECT PM5371 TUDX SONET/SDH T R I B U T A R Y U NI T C R O S S PMC-Sierra, Inc. CONNECT 8501 Commerce Court Burnaby, BC Canada V5A 4N3 604 668 7300


    OCR Scan     		PM5371 920525S4 920103S10 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1145 and A1146 Ultrasensitive Two-Wire Chopper-Stabilized Unipolar Hall Effect Switches Features and Benefits Description ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Factory programmed at end-of-line for optimized


    Original     		A1145 A1146 A1146 PDF

    ISO 11452-4

    Abstract: No abstract text available
    Text: A1147 and A1148 Low Current Ultrasensitive Two-Wire Chopper-Stabilized Unipolar Hall Effect Switches Features and Benefits Description ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Factory programmed at end-of-line for optimized


    Original     		A1147 A1148 A1148 ISO 11452-4 PDF

    z32100

    Abstract: LK23
    Text: Zilog P ro du ct Specification January 1987 /£ > 3 0 3 3 Z32101 MEMORY MANAGEMENT UNIT DESCRIPTION T he Z32101 M emory M anagem ent U nit MMU is a 32-bit bus-structured device that provides logicalto-physical address translation, memory organization, control, and access protection for


    OCR Scan     		Z32101 32-bit Z32100 LK23 PDF

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR PDF

    A1147

    Abstract: A1147ELHLT-T A1147EUA-T A1147EUATI A1147EUATI-T A1147LLHLT-T A1148 A1180 A1181
    Text: A1147 and A1148 Low Current Ultrasensitive Two-Wire Chopper-Stabilized Unipolar Hall Effect Switches Features and Benefits Description ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Factory programmed at end-of-line for optimized


    Original     		A1147 A1148 A1148 A1147ELHLT-T A1147EUA-T A1147EUATI A1147EUATI-T A1147LLHLT-T A1180 A1181 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1140, A1142, and A1143 Sensitive Two-Wire Chopper-Stabilized Unipolar Hall Effect Switches Features and Benefits Description ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Factory programmed at end-of-line for optimized


    Original     		A1140, A1142, A1143 A1143 PDF

    Untitled

    Abstract: No abstract text available
    Text: A1145 and A1146 Ultrasensitive Two-Wire Chopper-Stabilized Unipolar Hall Effect Switches Features and Benefits Description ▪ Chopper stabilization ▫ Low switchpoint drift over operating temperature range ▫ Low sensitivity to stress ▪ Factory programmed at end-of-line for optimized


    Original     		A1145 A1146 A1146 PDF