LL101
Abstract: LL101A LL101B LL101C SD101A
Text: Certificate TH97/10561QM LL101A - LL101C Certificate TW00/17276EM SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction
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TH97/10561QM
LL101A
LL101C
TW00/17276EM
OD-80C)
LL101
DO-35
SD101A,
LL101B
LL101B
LL101C
SD101A
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SCS422S
Abstract: Plastic-Encapsulate Diodes marking Zzz marking 6
Text: SCS422S High Speed Switching Diodes Elektronische Bauelemente Plastic-Encapsulate Diodes RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-523 CATHODE MARK . . FEATURES 1.6±0.1 High Reliabilty With High Surge Current Handing Capability
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SCS422S
OD-523
150mA
01-Jun-2002
SCS422S
Plastic-Encapsulate Diodes
marking Zzz
marking 6
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1N4148WT
Abstract: DIODES Inc diodes marking phone WIFI 1N4448HWT backward diode schottky diode DIODES diodes code marking diode marking code PB MARKING 30 ROHM ROHM marking
Text: New Product Announcement September 2003 Six High Speed Schottky and Switching Diodes in Ultra-Small SOD-523 package Schottky Diodes: SDM03U40, SDM10U45, SDM20U30, SDM20U40 Switching Diodes: 1N4148WT, 1N4448HWT CATHODE MARK SOD-523 A B C D E G B A Dim MARKING CODE
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OD-523
SDM03U40,
SDM10U45,
SDM20U30,
SDM20U40
1N4148WT,
1N4448HWT
OD-523
SC-79
1N4148WT
DIODES Inc diodes marking
phone WIFI
1N4448HWT
backward diode
schottky diode
DIODES diodes code marking
diode marking code PB
MARKING 30 ROHM
ROHM marking
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BAS70WS
Abstract: Plastic-Encapsulate Diodes Schottky diode low voltage marking k73
Text: BAS70WS Schottky Diodes Plastic-Encapsulate Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-323 FEATURES CATHODE MARK 2.5±0.2 * Low Turn-on Voltage * Designed For Surface Mount Application 1.7±0.1
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BAS70WS
OD-323
01-Jun-2002
BAS70WS
Plastic-Encapsulate Diodes
Schottky diode low voltage
marking k73
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated AP4312 CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER Description Pin Assignments The AP4312 is a highly integrated solution for a constant voltage/constant current mode SMPS application. Top View Pin 1 Mark The AP4312 contains one 1.21V voltage reference, one low voltage
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AP4312
AP4312
DS36797
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1SS400
Abstract: No abstract text available
Text: 1SS400 Diodes Switching diode 1SS400 !External dimensions Units : mm !Applications High speed switching 1.6±0.1 !Features 1) Extremely small surface mounting type.(EMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability. 1.2±0.05 CATHODE MARK A 0.12±0.05
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1SS400
1/10IR
1SS400
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1SS400
Abstract: No abstract text available
Text: 1SS400 Diodes Switching diode 1SS400 !External dimensions Units : mm !Applications High speed switching 1.6±0.1 !Features 1) Extremely small surface mounting type.(EMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability. 1.2±0.05 CATHODE MARK A 0.12±0.05
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1SS400
1SS400
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A916CY-4R7M
Abstract: JMK325BJ226MM design ideas JMK212BJ106MG LTC3441 MBRM120LT3 single inductor converter
Text: DESIGN IDEAS Monolithic Buck-Boost Converter Provides 1A at 3.3V by Mark Jordan without Schottky Diodes Introduction Inside the LTC3441 The LTC3441 patented control technique provides smooth and continuous transfer from buck, buck-boost and boost modes while maintaining a
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LTC3441
LTC3441
600mA
JMK212BJ106MG
JMK325BJ226MM
MBRM120LT3
A916CY-4R7M
A916CY-4R7M
JMK325BJ226MM
design ideas
JMK212BJ106MG
MBRM120LT3
single inductor converter
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BAT48 SCHOTTKY
Abstract: BAT48 LL48 pd330
Text: LL48 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,
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OD-80C)
DO-35
BAT48.
100mA
500mA
BAT48 SCHOTTKY
BAT48
LL48
pd330
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LL101
Abstract: LL101A LL101B LL101C SD101A
Text: LL101A - LL101C SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching
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LL101A
LL101C
OD-80C)
LL101
DO-35
SD101A,
LL101B
LL101B
LL101C
SD101A
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SCHOTTKY DIODE SOD-80
Abstract: LL101 LL101A LL101B LL101C SD101A SD101AW SD101BW SD101CW SOD123 4001
Text: LL101A THRU LL101C Schottky Diodes FEATURES MiniMELF ♦ For general purpose applications. ♦ The LL101 series is a metal-on-silicon .142 3.6 .134 (3.4) ∅ .063 (1.6) .055 (1.4) Cathode Mark Schottky barrier device which is protected by a PN junction guard ring. The low forward
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LL101A
LL101C
LL101
DO-35
SD101A,
OD-123
SD101AW,
SD101BW,
SD101CW.
LL101A
SCHOTTKY DIODE SOD-80
LL101B
LL101C
SD101A
SD101AW
SD101BW
SD101CW
SOD123 4001
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VJ0805X
Abstract: GRM31CR72A105KA01L MIC4102 MIC4102BM Si4484EY Capacitor 0.1uF 50V vishay bc
Text: MIC4102 Evaluation Board MIC4102 Gate Driver Evaluation Board By Mark Ziegenfuss General Description This evaluation board provides a platform for evaluating the MIC4102 Power MOSFET driver. The MIC4102 is a high voltage synchronous gate driver controlled by a single
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MIC4102
M9999-111407
VJ0805X
GRM31CR72A105KA01L
MIC4102BM
Si4484EY
Capacitor 0.1uF 50V vishay bc
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Untitled
Abstract: No abstract text available
Text: LL48 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage,
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OD-80C)
DO-35
BAT48.
100mA
500mA
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BAT42
Abstract: BAT43 LL42 LL43
Text: Certificate TH97/10561QM LL42 - LL43 Certificate TW00/17276EM SCHOTTKY BARRIER DIODES MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN
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TH97/10561QM
TW00/17276EM
OD-80C)
DO-35
BAT42
BAT43
200mA
BAT43
LL42
LL43
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FRMB1211C-TR
Abstract: 251C
Text: 3 # # [ E * SYM. S-No. : 025071 2006. _ K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- G1. 18 A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3 :7 / - F
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FRMB1211C-TR
251C
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FYMG1211C-TR
Abstract: ltt2 251C
Text: 3 # # [ E * SYM. S-No. : 025071 K tt Í ZONE I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F
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FYMG1211C-TR
ltt2
251C
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FAMB1211C-TR
Abstract: diode ED 68 251C 0118mm
Text: 3 # # [ E* SYM. S-No. : 025071 2 0 0 6 . _ G1. K tt Í ZONE I ♦ REVISIONS REV. NO. A B ft DATE in * * * NTF. NO. REV. BY A »rBSÈfi- 18 A I - 7 Dimensions t 'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3: 7 / - F
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FAMB1211C-TR
diode ED 68
251C
0118mm
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FYMB1211C-TR
Abstract: 251C
Text: 3 # # [ E * SYM. S-N o. : 025071 K Í tt ZONE I I ♦ REVISIONS REV. NO. _ G1. 18 A in * * * B ft DATE NTF. NO. REV. BY A »rBSÈfi- 2 0 0 6 . A - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad vO CN 1. 3:7 / - F
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FYMB1211C-TR
251C
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FAMG1211C-TR
Abstract: sfeb FAMG1211C 251C WM Mark code
Text: 3 # # [ E * E « SYM. ZONE S-No. : 025071 Í I ♦ R E V IS IO N S REV. NO. _ G1. 18 A B ft in * * * NTF. NO. DATE REV. BY A »rBSÈfi- 2 0 0 6 . A I - 7 Dimensions t'J Cathode Mark vO LED Died) LED Die(2) (Polarity Mark) 1 | £ lc Recommended Pad 1. 3: 7 / - F
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FAMG1211C-TR
sfeb
FAMG1211C
251C
WM Mark code
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Untitled
Abstract: No abstract text available
Text: Diodes High-Speed Switching Diode 1SS400 under develoment tentative specifications •A p p lic a tio n s ►External dim ensions (Units: mm) High speed switching CATHODE MARK •F e a tu re s 1)Designed for moanting on extremely small surface areas (EMD2)
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1SS400
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Untitled
Abstract: No abstract text available
Text: Diode, switching, surface mount 1SS355 These diodes are suitable for high density surface mounting on printed circuit boards. They have a high switching speed. The reverse recovery time (trr is typically 2 ns.) Dimensions (Units : mm) CATHODE MARK Features
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1SS355
OD-323)
1SS355
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Untitled
Abstract: No abstract text available
Text: LL41 Schottky Diodes FEATURES MiniMELF ♦ ♦ This diode features low turn-on voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. C athode Mark .142 3 .6
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DO-35
BAT41.
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LL101A
Abstract: No abstract text available
Text: LLIOIA . LL101C Silicon Schottky B arrier Diodes for general purpose applications. C athode Mark II The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for
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LL101C
LL101
DO-35
SD101A,
LL101B
LL101C
LL101
LL101A
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Untitled
Abstract: No abstract text available
Text: Diodes Schottky Barrier Diode RB751V-40 •Extemal dimensions Units: mm •A pplications High speed switching CATHODE MARK •F e a tu re s 1)Designecf for mounting on small surface areas (UMD2) 2)High reliability 1.25±0.1 •C onstruction Silicon epitaxial
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RB751V-40
1000m
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