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    MARK B1 SOT23 Search Results

    MARK B1 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARK B1 SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


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    MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A PDF

    MMBT2907A

    Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16
    Text: PN2907A MMBT2907A PZT2907A C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


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    PN2907A MMBT2907A PZT2907A OT-23 OT-223 NMT2907 MMPQ2907 SOIC-16 MMBT2907A MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16 PDF

    PN2222A

    Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
    Text: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


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    PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 PN2222A PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16 PDF

    PR63

    Abstract: PN2907A MMBT2907A MMPQ2907 NMT2222 NMT2907 PZT2907A SOIC-16 mark 2F
    Text: PN2907A PZT2907A MMBT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 200 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


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    PN2907A PZT2907A MMBT2907A OT-23 OT-223 NMT2907 MMPQ2907 SOIC-16 PR63 PN2907A MMBT2907A MMPQ2907 NMT2222 NMT2907 PZT2907A SOIC-16 mark 2F PDF

    2N3904 SOT-23

    Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
    Text: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to


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    2N3904 MMBT3904 OT-23 MMPQ3904 PZT3904 SOIC-16 OT-223 2N3904 MMBT3904 MMPQ3904 2N3904 SOT-23 mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild PDF

    IC 7403

    Abstract: PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A
    Text: PN2222A MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 100 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced


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    PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A PDF

    FAIRCHILD SOT-223 MARK

    Abstract: No abstract text available
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.


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    PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 FAIRCHILD SOT-223 MARK PDF

    PN2222A le

    Abstract: oKH sot-23 PZT2222A on MMBT2222AI MMPQ
    Text: PN2222AI MMBT2222AI MMPQ2222 I NMT2222 I PZT2222A D iscrete POWER & Sig n a l Technologies Na t ion a I S e m i c o n d u c t o r ' PN2222A PZT2222A MMBT2222A SOT-23 B SOT-223 Mark: 1P NMT2222 MMPQ2222 SOT-6 SOIC-16 B1 M a r i e .1 B NPN General Purpose Amplifier


    OCR Scan
    PN2222AI MMBT2222AI MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 PN2222A le oKH sot-23 PZT2222A on MMPQ PDF

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent PDF

    capaCITIVE proximity switch block diagram

    Abstract: ic-dp Dp 104 g009 SOT223-4L G003 G008 sot223-4 PI SOT23
    Text: ar y n i im prel iC-DP HIGHSIDE SWITCH Rev B1, Page 1/7 FEATURES APPLICATIONS ♦ 36 V highside switch/level shifter ♦ p-channel output driver without charge pump for short activation time ♦ Decoupling of input and output reference voltages SOT23-6L


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    OT23-6L) OT223-4L, SC59-3L, OT23-6L D-55294 capaCITIVE proximity switch block diagram ic-dp Dp 104 g009 SOT223-4L G003 G008 sot223-4 PI SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-DN LOWSIDE SWITCH Rev B1, Page 1/7 FEATURES APPLICATIONS ♦ 36 V lowside switch/level shifter ♦ Decoupling of input and output reference voltages SOT23-6L permits control by 5V logic ♦ 200 mA of output current ♦ Short-circuit protected


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    OT23-6L) SC59-3L, OT23-6L D-55294 PDF

    sc59

    Abstract: G003 G008 mark B1 sot23
    Text: ar y n i im prel iC-DN LOWSIDE SWITCH Rev B1, Page 1/7 FEATURES APPLICATIONS ♦ 36 V lowside switch/level shifter ♦ Decoupling of input and output reference voltages SOT23-6L permits control by 5V logic ♦ 200 mA of output current ♦ Short-circuit protected


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    OT23-6L) SC59-3L, OT23-6L D-55294 sc59 G003 G008 mark B1 sot23 PDF

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


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    ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379 PDF

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx PDF

    jrc 2002

    Abstract: 2388+84+JRC sot 23 mark 64 5 PIN CODE B2 mark G1 SOT-23 jrc 8 pin MARK D2 SOT23 jrc 14 pin A/2043 JRC jrc 11
    Text: STANDARD MARK LAYOUT The standard mark layout of our packages are as follows. For further information, please contact to our sales offices. <Lead Insertion Type> Number of Name pins Mark Layout Device Device name TO-220 JRC Logo Device code Serial No. 3 ,4 ,5


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    O-220 jrc 2002 2388+84+JRC sot 23 mark 64 5 PIN CODE B2 mark G1 SOT-23 jrc 8 pin MARK D2 SOT23 jrc 14 pin A/2043 JRC jrc 11 PDF

    PAA 737

    Abstract: MAX6145 ebaa
    Text: 75- 7777: Rev. 0; 12/96 JVWYXAJVX SOT23, Low-Cost, Low-Dropout, 3-Terminal Voltage References General Description Initial accuracy for these devices is ±1%. The output temperature coefficient is typically 15ppm/°C, and guarante ed to be less than 50ppm /°C except


    OCR Scan
    MAXG12S/MAX6141/MAX614S/MAX6150/MAX6160 MAX6125/MAX6141 /MAX6145/MAX6150/MAX6160 200mV MAX61xx translat48 OT-143 PAA 737 MAX6145 ebaa PDF

    TK631xxS

    Abstract: mark A1 SOT23 TK631XXBB6 TK631XXH SON2017-6 TK631 A1 MARK not sot23-5 battery protection ic sot23-5
    Text: Io=200mA high accuracy ±1% CMOS LDO Regulator IC Io=200mA ±1%高精度出力 CMOS低飽和レギュレータIC TK631XXBB6 TK631XXH TK631XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK631XXBB6 type, the TK631XXH type and the TK631XXS type are CMOS LDO Regulator ICs. The


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    200mA 200mA TK631XXBB6 TK631XXH TK631XXS SON2017-6) OT23-5) TK631XXBB6 TK631XXH TK631XXS mark A1 SOT23 SON2017-6 TK631 A1 MARK not sot23-5 battery protection ic sot23-5 PDF

    TK637xxS

    Abstract: TK637 SON2017-6 TK637XXH mark A1 SOT23 mark B1 sot23
    Text: Io=150mA Iq=10 A capacitor-less CMOS LDO Regulator IC Io=150mA Iq=10μA キャパシタレスCMOS低飽和レギュレータIC TK637XXAB6 TK637XXH TK637XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK637XXAB6 type, the TK637XXH type and the TK637XXS type are CMOS LDO Regulator ICs. The IC


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    150mA TK637XXAB6 TK637XXH TK637XXS SON2017-6) OT23-5) TK637XXAB6 TK637XXH TK637XXS TK637 SON2017-6 mark A1 SOT23 mark B1 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14


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    5M-1982. O-263 PDF

    sot23 mark code CB

    Abstract: sot23 mark code AE ZMDC830 marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5
    Text: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase


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    ZC829, ZDC833, ZMV829, ZMDC830 ZV831 OT323 OD523 OD323 200pA) sot23 mark code CB sot23 mark code AE marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5 PDF

    mark B1 sot23

    Abstract: No abstract text available
    Text: POWER&RF Io=150mA high accuracy ±1% CMOS LDO regulator IC Io=150mA ±1%高精度出力 CMOS低飽和レギュレータIC TK631XXB TK631XXH TK631XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK631XXB type, the TK631XXH type and the TK631XXS type are CMOS LDO regulator ICs. The


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    150mA 150mA TK631XXB TK631XXH SON2017-6) TK631XXS OT23-5) TK631XXB TK631XXH TK631XXS mark B1 sot23 PDF

    TK63730S

    Abstract: No abstract text available
    Text: POWER&RF Io=100mA Iq=10µA capacitor-less CMOS LDO regulator IC Io=100mA Iq=10µA キャパシタレスCMOS低飽和レギュレータIC TK637XXB TK637XXH TK637XXS FC-4 (SON2017-6) (SOT23-5) DESCRIPTION The TK637XXB type, the TK637XXH type and the TK637XXS type are CMOS LDO regulator ICs. The


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    100mA TK637XXB TK637XXH SON2017-6) TK637XXS OT23-5) TK637XXB TK637XXH TK637XXS TK63730S PDF

    MMBT100

    Abstract: MMBT100A PN100 PN100A
    Text: NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 TO-92 1 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A 1 SOT-23 1. Base 2. Emitter 3. Collector


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    300mA. PN100/PN100A OT-23 MMBT100 MMBT100A PN100 PN100A PDF

    PS2019

    Abstract: PI74FCT521T PI74FCT521TH PI74FCT521TL tssop 20 PERICOM 150 MIL PACKAGE mark a7 sot23
    Text: PI74FCT521T 8-Bit Identity Comparator PI74FCT521T


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    PI74FCT521T PI74FCT521T PI74FCT245ATQ PI74FCT 245TQ 0010BSC 14-pin 16-pin PS2019B PS2019 PI74FCT521TH PI74FCT521TL tssop 20 PERICOM 150 MIL PACKAGE mark a7 sot23 PDF