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    MARK CODE WL TRANSISTOR Search Results

    MARK CODE WL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARK CODE WL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A PDF

    BA2rc

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48288118 288M-BIT PD48288118 BA2rc PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48288118 288M-BIT PD48288118 PDF

    p144f

    Abstract: TDK EF25 BAP36 PD482
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3-phase brushless motor pre-driver BD63000MUV ●General Description BD63000MUV is pre-driver of 3-phase brushless motor. It generates a driving signal from the Hall sensor and drives PWM through the input control signal. Since there is a built-in booster circuit, Nch-Nch MOS transistors can


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    BD63000MUV BD63000MUV PDF

    PD48576109,

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0100 PD48576109, PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48288109A PD48288118A R10DS0098EJ0001 288M-BIT PD48288109A 432-word PD48288118A 216-word PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original
    PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3-phase brushless motor pre-driver BD63000MUV ●General Description BD63000MUV is pre-driver of 3-phase brushless motor. It generates a driving signal from the Hall sensor and drives PWM through the input control signal. Since there is a built-in booster circuit, Nch-Nch MOS transistors can


    Original
    BD63000MUV BD63000MUV PDF

    BA1 K11

    Abstract: ba1d1a PD48576118FF-E24-DW1-A
    Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48576109-A PD48576118-A R10DS0064EJ0001 PD48576109-A 864-word PD48576118-A BA1 K11 ba1d1a PD48576118FF-E24-DW1-A PDF

    CM508

    Abstract: cmos single chip camera driver kic 125 M38277M8 marking code P60 mitsubishi machine instruction 740 family Mitsubishi part numbering three and half digit 7 SEGMENT LCD DISPLAY DSA003633
    Text: MITSUBISHI MICROCOMPUTERS 3827 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER ●Serial I/O1 . 8-bit ✕ 1 UART or Clock-synchronized ●Serial I/O2 .8-bit ✕ 1 (Clock-synchronized) ●PWM output . 8-bit ✕ 1


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    10-bit CM508 cmos single chip camera driver kic 125 M38277M8 marking code P60 mitsubishi machine instruction 740 family Mitsubishi part numbering three and half digit 7 SEGMENT LCD DISPLAY DSA003633 PDF

    mitsubishi machine instruction 740 family

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS 3850 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 3850 group is the 8-bit microcomputer based on the 740 family core technology. The 3850 group is designed for the household products and office automation equipment and includes serial I/O functions, 8-bit


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    PDF

    B00016

    Abstract: M3850 sh11 m38503e4 p31an
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original
    PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original
    PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0300 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original
    PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300 PDF

    m38503e4

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF

    m38503e4

    Abstract: mitsubishi 740 software manual
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


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    PD48288118 288M-BIT PD48288118 PDF

    WALSIN 1903

    Abstract: RFANT32161 RFBPB2520120AT RFANT6050110L1T RFANT3216120A5T RGFRA1903041A1T RFBLN2012090AT WALSIN f antenna balun 2.4ghz RFANT5220110AT
    Text: w w w. p a s s i v e c o m p o n e n t . c o m INDEX Subject Page 2.4 GHz Bluetooth/WLAN-Chip Antenna 5220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2.4 GHz Bluetooth/WLAN-Chip Antenna 3216 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    PDF

    mitsubishi series 740 software

    Abstract: PCA4738F-80A 38C3 igbt catalog Mitsubishi
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF

    mitsubishi series 740 software

    Abstract: igbt catalog Mitsubishi Marking P71 PCA4738F-80A 38C3 Hitachi LCD Part Numbering
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    marking code P60

    Abstract: PCA4738F-80A 38C3 56ROM igbt catalog Mitsubishi mitsubishi series 740 software
    Text: MITSUBISHI MICROCOMPUTERS 38C3 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER ●LCD drive control circuit Bias . 1/1, 1/2, 1/3 Duty . 1/1, 1/2, 1/3, 1/4


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    PDF