IC NE564
Abstract: NE564 fsk ne564 AN179 50MHz VCO schematic iE25
Text: INTEGRATED CIRCUITS AN179 Circuit description of the NE564 1991 Dec Philips Semiconductors Philips Semiconductors Application note Circuit description of the NE564 AN179 diode voltage. Good high frequency performance for Q2 and Q3 is achieved with current levels in the low mA range. Current-source
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AN179
NE564
NE564
SL01039
IC NE564
fsk ne564
AN179
50MHz VCO schematic
iE25
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HRF302A
Abstract: 57fh b DIODE 3A do-214 Hitachi DSA00308
Text: ADE-208-244B Z HRF302A Silicon Schottky Barrier Diode for Rectifying Rev. 2 Nov.1994 Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly.
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ADE-208-244B
HRF302A
DO-214
DO-214
10msec
ValueX62W@
eY04V
WgX62W
HRF302A
57fh b
DIODE 3A do-214
Hitachi DSA00308
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ED94
Abstract: h9406 PC354 E64380 PC354N PC354NT CY64
Text: PREPARED I SPEC. DATE: BY: SHA APPROVED BY: DATE: ED-9466 1B October 29. 1999 ELECTRONIC COMPO GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR PHOTOCOUPLER I No. MODEL I Business I OF’TO-ELECT= dealing name I No. PC354 1. These speciilcation sheets include materials protected under copyright of Sharp Corporation
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ED-9466
PC354
h-9406
ED94
h9406
PC354
E64380
PC354N
PC354NT
CY64
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E64380
Abstract: No abstract text available
Text: SW DEVICE SPEC. No. ED-96027A ISSUE September PAGE 13 Pages ELECTRONIC COMPONENTS GROUP SHARP CORPORATION REPRESENTATIVE SPECIFICATION OPTO-ELECTRONIC SPECIFICATION FOR 30, 1998 DMSION DEVICES Business dealing name PHOTOCOUPLER MODEL No. PC3H4 1. These specification sheets include materials protected
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ED-96027A
E64380
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RM3C
Abstract: No abstract text available
Text: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. RM 3 RM 3A RM 3B RM 3C RM 4Y RM 4Z RM 4 RM 4A RM 4B RM 4C I F (AV) (A) ( ) is with Heatsink 50Hz Half-cycle Sinewave Single Shot 150 400 600 800 1000
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UL94V-0
RM3C
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kluber
Abstract: KLUBER WOLFRACOAT C Thyristor BT 102 water cooled thyristor assembly kluber wolfracoat thyristor ys 150 017 NT102 295kW Thyristor ys 150 103 RC snubber thyristor design
Text: Technical Information Technische Erläuterungen Für schnelle Thyristoren wird hierzu empfohlen: - C, = 10.47 nF - R, entsprechend 7, = Fl, . C, = 1,0 . .2.0 ps - D, schnelle Diode Der Entladewiderstand R, darf niemals fehlen, weil sich sonst einige Daten der Thyristoren verschlechtern können, z.B. die kritische Spannungssteilheit dv/dt ,. Falls die Beschaltung den Verlauf des Steuerstroms nachteilig beeinflußt, so ist dies bei der Bemessung des
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Untitled
Abstract: No abstract text available
Text: TAPING STYLE OF K & T-PACK TYPE DIODES DIMENSIONS OF TAPING K-PACK STYLE Symbol Dimensions 6.8 ±0.1 B 10.1 ±0.1 Ko 2.8 ±0.1 P1 8.0 ±0.1 + Do + 1.5 ±0.1 Po 4.0 ± 0.1 E 1.75 ±0.1 P2 2.0 ±0.1 F 7.5 ±0.1 W1 13.3 ±0.1 W 16.0 ±0.3 T 0.2 ±0.05 K1 3.0 ±0.1
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MS5C7854
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Untitled
Abstract: No abstract text available
Text: HZU-LL Series Silicon Epitaxial Planar Zener Diodes for Hard Knee Low Noise HITACHI Features Low noise voltage approximately 1/3 to 1/10 lower than the HZU series . Temperature coefficient is approximately 1/2 lower than the HZU series. _ Vz-Iz characteristics are semi-logarithmic linear from Iz = InA to 1mA.
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ADE-208-236A
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5252B
Abstract: Zener diode 81A
Text: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*
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OT-23.
MMBZ5221B-5252B
OT-23
MMBZ5251B
MMBZ5252B
MMBZ5235B
MMBZ5242B
MMBZ5245B
MMBZ5246B
MMBZ5248B
5252B
Zener diode 81A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE s r ; I J 7 A 7m wmr SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • § • • Repetitive Peak Reverse Voltage : Vr r m = 400V Average Output Rsctiiisd Currsnt ’ I q —5A
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5GUZ47
100ns
961001EAA2'
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mark KO diode
Abstract: HITACHI HZS-LL
Text: HZS-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise HITACHI AD E-208- 122A Z Rev 1 Features • Vz-Iz characteristics are Selnilogarithlnic linear from IZ= InA to llnA and have sharper breakdown knees in a low current region, and also lower YZ temperature coefficients .
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E-208-
mark KO diode
HITACHI HZS-LL
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transistor 1fp
Abstract: 52ga 414n 53m diode
Text: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)
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LS1S1M/S2M/53M
NJL5151M
E8256I)
52M/53M
NJL5151M/52M/53M
transistor 1fp
52ga
414n
53m diode
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MA4 diode
Abstract: No abstract text available
Text: 1T365 SONY. Silicon V ariable C apacitance Diode Description The 1T365 is a variable capacitance diode contained in super minature package, and used for electronic-tuning of BS tuner. Features • Super minature package • Small capacitance 0.7pF Typ. VR= 25V
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1T365
1T365
M-235
GG11Q77
MA4 diode
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 41E D 0302303 0G02flflQ D 1T362 SO NY. Silicon Variable Capacitance Diode T - o -7 - I ? Description 1T362 is a variable capacitance diode designed for electronic tuning UHF, VHF TV tuners and AFT circuits. A miniature package has
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0G02flflQ
1T362
1T362
M-235
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Untitled
Abstract: No abstract text available
Text: HZS-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise HITACHI ADE-208-122A Z Rev 1 Features • Vz-Iz characteristics are semilogarithmic linear from IZ=lnA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients .
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ADE-208-122A
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Untitled
Abstract: No abstract text available
Text: 1T363 sony, Silicon Variable Capacitance Diode Package Outline Description The 1T363 is a variable capacitance diode designed for electronic tuning o f CATV tuner. A miniature package has been adopted to allow tuner miniaturization, while maintaining the same
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1T363
1T33C.
1T363
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DS446
Abstract: No abstract text available
Text: Ordering number : EN715D _D S-4 4 6 Silicon Epitaxial Planar Type Temperature Compensation Use Very High-Speed Sw itching Diode F eatu re s •Glass sleeve structure ■Power dissipation : P = 300mW max. • Interterminal capacitance : C = 3.0pF max.
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EN715D
300mW
55cers
DS446
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2653,PS2654,PS2653L2,PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2653, PS2654, PS2653L2, PS2564L2 are optically coupled isolators containing a GaAs light emitting diode
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PS2653
PS2654
PS2653L2
PS2654L2
PS2653,
PS2654,
PS2653L2,
PS2564L2
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ic 747
Abstract: TC9303AN tc9173p tc9174 IC 741 TC9174P TC9189f 4x7 SEGMENT LED DISPLAY TC9303 tfk4
Text: TOSHIBA-. E L E C T R O N I C DE DEl ‘ Ì C H 7 E 4 ? DGlflSDS ¿£i¿ DTS MICRO CONTROLLER CONTAINING HIGH VOLTAGE Unit in mm VACUUM FLUORESCENT INDICATION TUBE DRIVER TC9301AN is 4-bit CMOS micro controller for digital tuning system use having built-in
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TC9301AN
42-pin
T-49-19-57
TC5066BP)
ic 747
TC9303AN
tc9173p
tc9174
IC 741
TC9174P
TC9189f
4x7 SEGMENT LED DISPLAY
TC9303
tfk4
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 3FWJ42N TOSHIBA SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE 3 F W J 42 N HIGH SPEED RECTIFIER APPLICATIONS • • • Average Forward Current : Ip AV = 3.0A Low Forward Voltage : V f m ~ 0.37V (Max.) Repetitive Peak Reverse Voltage : V rrm = 30V
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3FWJ42N
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TERMISTOR 301
Abstract: TERMISTOR 200
Text: SLU302XR SONY. 160/140mW High Power Laser Diode with a Detachable Fiber Description SLU302XR is a high power laser diode based on the SLD302XT w ith a detachable fiber. Direct coupling to a fiber having an FC connector is possible w ithout any optical adjustment.
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SLU302XR
160/140mW
SLU302XR
SLD302XT
SLU300
SLU304XR
SLU304XR
TERMISTOR 301
TERMISTOR 200
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phototransistor OCP71
Abstract: OCP71 GTE175M GD150M gsa10 dekatron GC10D ScansU9X23 DIGITRON GR10A
Text: 141 C IR C U IT S Dekatron Circuits The recommended Dekatron drive and coupling circuits are given in the following pages together with a number of suitable pulse shaping circuits. Although in the majority of cases the Dekatron counter symbol has been used, the drive circuits are equally applic
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470pF
CT-14
phototransistor OCP71
OCP71
GTE175M
GD150M
gsa10
dekatron
GC10D
ScansU9X23
DIGITRON
GR10A
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ESJA92
Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Text: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJA92
ESJA92lÂ
I95t/R89)
Shl50
ESJA92-10
T151
high voltage diode 100 kv
esja
212es
12KV 2ma
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EN2929
Abstract: No abstract text available
Text: O rdering num ber :EN2929 i 8 A Ñ Y O I SB10-03A2/SB10-03A3 No.2929 Schottky B arrier Diode 30V, 1.0A Rectifier A p p lic a tio n s • H igh frequency rectification sw itching regulators, converters, choppers F e a tu r e s •Low forward voltage (Vp max = 0.55V)
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EN2929
SB10-03A2/SB10-03A3
SB10-03A2
10mm2
SB10-03A3
EN2929
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