DFM3MF2
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM3MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Type mark Lot mark Cathode band DCB • 高速スイッチング用 • ソフトリカバリー特性（低ノイズ）
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM1MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Type mark Lot mark Cathode band B Z B • 高速スイッチング用 • ソフトリカバリー特性（低ノイズ）
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TRM11C
Abstract: No abstract text available
Text: TRM11C 一般整流二極管 General Rectifier Diodes •特徵 ■外形尺寸和印記 Features IF（AV） ● VRRM ● 高可靠性 單位 Unit：mm 1.2A 1000V High reliability ● 負極標誌 Cathode Mark 型號 Type ■用途 Applications ● Outline Dimensions and Mark
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TRM11C
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TRM11C
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DSM1MA4
Abstract: DSM1MA2
Text: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark S A 4 • 一般電源整流用 •ガラスパッシベーションによる高耐熱性
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Abstract: No abstract text available
Text: TRG4A~TRG4J 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 3.0A ● IF（AV） ● VRRM 50V~600V ● trr①≤0.15 s ● 高可靠性 High reliability ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm 負極標誌 Cathode Mark
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irrm1
Abstract: No abstract text available
Text: TES1 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 0.7A ● IF（AV） ● VRRM 400V ● trr①≤0.6 s, trr②≤1.5μs High reliability ● 高可靠性 ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm 負極標誌 Cathode Mark
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irrm1
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Untitled
Abstract: No abstract text available
Text: TEU1C 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 1.0A ● IF（AV） ● VRRM 1000V ●trr①≤0.5 s ● 高可靠性 High reliability ■用途 ● ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm 負極標誌 Cathode Mark
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DSM3MA1
Abstract: DSM3MA4 DSM3MA2
Text: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark S A 4 • 一般電源整流用 •ガラスパッシベーションによる高耐熱性
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Abstract: No abstract text available
Text: SJ114513 年月日 D A T E CN NO. 変 更 内 容 DESCRIPTION 2 26/FEB/2014 009053 3 17/MAR/2014 009319 査 閲 APPD. 承 認 APPD. CORRECT AN ERROR REDACTION MARK:1 T.SHIINA O.TAKAGI T.MIYASHITA REVISED FORM(REDACTION MARK:6)
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26/FEB/2014
SJ114513
17/MAR/2014
DF02R026NA1
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hfqs79
Abstract: No abstract text available
Text: 高周波モジュール 05.05.30 PLLモジュール PART NO. MANUFACTURER'S MARK AND LOT NO. PART NO. MANUFACTURER'S MARK AND LOT NO. 7 14 D1 2 3 1 2 3 4 7.8±0.2 6 Lot No. D: Factory Code 1: End figure of the Christian Era. 2, 3: Week No. 1.8 max. 4 5 14
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HFQS68
HFQS79
7002600MHz
7005900MHz
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Abstract: No abstract text available
Text: TBY228 阻尼二極管 Damper Diodes •特徵 Features ● IF（AV） 5.0A ● VRRM 1500V ● trr①≤2.0 s High reliability ● 高可靠性 ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm 負極標誌 Cathode Mark ■用途 ● Φ5.2±0.2
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TBY228
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TBYW95B
Abstract: No abstract text available
Text: TBYW95A~TBYW95C 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 3.0A ● IF（AV） ● VRRM 200V~600V ● trr①≤0.25 s ● 高可靠性 High reliability ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm 負極標誌 Cathode Mark
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TBYW95A
TBYW95C
TBYW95A
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LP06M4R1HA
Abstract: LP06M3R1HA 12VCC LP05M4R1AA LP05M3R1AA
Text: 传感器元件 05.05.30 无接触电位器 Center mark 2–ø3.5 2.54 2.54 4.5 0.64 +0 4.5 +0 2.54 3– ø5 –0.03 4.2±0.2 2.54 ø5–0.03 4.2±0.2 Center mark 3– Pin 3 Pin 3 Pin 2 6 ø15 12±0.3 10 17.5 5.5±1.5 22±0.3 Pin 1 30 in mm ø15 1.21 Pin 2
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LP05M3R1AA
LP06M3R1HA
LP05M4R1AA
LP06M4R1HA
LP06M4R1HA
LP06M3R1HA
12VCC
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A128C256
Abstract: 80c31 application 8031P H0902 eeprom PROGRAMMING tutorial h0908 WSI Cross Reference 29F010 EPM7064S EPM7064SLC84-5
Text: 3/22/98 – REV 1.0 Design Tutorial, PSD813F1 – 80C31 Application Note 057 Preliminary By Dan Harris and Mark Rootz Contents 1 Introduction . 2
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PSD813F1
80C31
A128C256
80c31 application
8031P
H0902
eeprom PROGRAMMING tutorial
h0908
WSI Cross Reference
29F010
EPM7064S
EPM7064SLC84-5
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Untitled
Abstract: No abstract text available
Text: US6X7 Transistors General purpose amplification 12V, 1.5A US6X7 (2) (6) (1) 0.2 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 0.15Max. 標印略記号 : X07 ROHM : TUMT6 zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit Symbol Limits Unit Collector-base voltage
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200mV
500mA
85Max.
15Max.
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DAM3MA27
Abstract: DAM3MA47 diode zener m3 DAM3MA16 DAM3MA20 DAM3MA33 DAM3MA82 DAM3MA12 DAM3MA39 DAM3MA15
Text: SURGE SUPPRESSOR DIODE DAM3MA FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. • High heat-resistant due to glass passivation. Type mark • 大きな逆方向損失が許容できます。
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1503MA20
DAM3MA22
DAM3MA24
DAM3MA27
DAM3MA47
diode zener m3
DAM3MA16
DAM3MA20
DAM3MA33
DAM3MA82
DAM3MA12
DAM3MA39
DAM3MA15
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DAM1MA27
Abstract: DAM1MA33 M1 zener DIODE DAM1MA22 DAM1MA30 DAM1MA51 DAM1MA18 DAM1MA20 DAM1MA15 Zener diode 8,2v
Text: SURGE SUPPRESSOR DIODE DAM1MA FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. • High heat-resistant due to glass passivation. Type mark • 大きな逆方向損失が許容できます。
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b703
Abstract: A606 000D 74HC00 AN1738 MC68HC05 MC68HC705JP7 MC74HC00 3f05 motorola application note
Text: Order this document by AN1738/D Motorola Semiconductor Application Note AN1738 Instruction Cycle Timing of MC68HC05JJ/JP Series Microcontrollers By Mark L. Shaw Member, Technical Staff, Sensor Products Division Transportation Systems Group Phoenix, Arizona
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AN1738/D
AN1738
MC68HC05JJ/JP
MC68HC05JJ
MC68HC05JP
b703
A606
000D
74HC00
AN1738
MC68HC05
MC68HC705JP7
MC74HC00
3f05
motorola application note
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marking u6
Abstract: BSS64 mark U6
Text: SEMICONDUCTOR BSS64 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 U6 1 2 Item Marking Description Device Mark U6 BSS64 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BSS64
OT-23
marking u6
BSS64
mark U6
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A606
Abstract: b711 000D 74HC00 AN1738 MC68HC05 MC68HC705JP7 MC74HC00
Text: Freescale Semiconductor, Inc. Order this document by AN1738/D Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1738 Instruction Cycle Timing of MC68HC05JJ/JP Series Microcontrollers By Mark L. Shaw Member, Technical Staff, Sensor Products Division
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AN1738/D
AN1738
MC68HC05JJ/JP
MC68HC05JJ
MC68HC05JP
A606
b711
000D
74HC00
AN1738
MC68HC05
MC68HC705JP7
MC74HC00
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illuminator
Abstract: AM-30-26
Text: 注文コード No. N A 0 1 0 8 AM-30-26 外形図 unit:mm Lighting Side Effective Area Overcoat Side Overcoat Electrode (ANODE) (+) MARK Electrode (CATHODE) Glass 0.84 ±0.05 0.4 ±0.1 0.445 ±0.1 0.505 0.975 ±0.1 (1.36) 1.0 ＋0.15 2.0－0.05 ±0.1 1.4
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AM-30-26
/N1805HKIM
A0108-1/2
A0108-2/2
illuminator
AM-30-26
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PN547
Abstract: PN521 P13B16233 smd Pn5 PN533 cpci connector type a 352068-1 imo tdms timer motorola module 80pin smd code book 9u SDRAM, SMT, 128M X 16
Text: MSC8102PFCUG/D Rev. 1.3 MSC8102 - Packet Telephony Farm Card PFC User Guide and Hardware Detailed Design Description PFC_DDD_v1.3.doc Author: Colin McEwan Mark Knox Email: colin.mcewan@motorola.com mark.knox@motorola.com Phone: +44 1355 356061 +44 1355 356034
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MSC8102PFCUG/D
MSC8102
MSC8102
MSC8102Sync
PN547
PN521
P13B16233
smd Pn5
PN533
cpci connector type a 352068-1
imo tdms timer
motorola module 80pin
smd code book 9u
SDRAM, SMT, 128M X 16
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Untitled
Abstract: No abstract text available
Text: SBD Type：NSQ NSQ03A06 03A06 •OUTLINE DRAWING 構造 ： 表面実装型ショットキバリアダイオード SBD Construction: Surface Mounting, Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification cathode mark
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NSQ03A06
03A06
NSQ03A06
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NEh jJ8
Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Text: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D
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57-flrUS
t4133)
944i3i-qq5l1
f94C93/-i-Cd)
2N2222
470PF
NEh jJ8
k30270
LB 11911
095275-VK20BA
ue09
KM 7-C 1 UF -20 100V
74S83
S0807
74LS32N
z3ans
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