Zener 9v
Abstract: MA8120 marking 12D DIODES C100 MAZL120D 20VZ
Text: MA111 Zener Diodes Composite Elements MAZL120D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 ● Four anode-common element wiring of MA8120
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MA111
MAZL120D
MA8120
Zener 9v
MA8120
marking 12D DIODES
C100
MAZL120D
20VZ
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C100
Abstract: MA8120 MAZL120D
Text: MA111 Zener Diodes Composite Elements MAZL120D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 type package 5-pin ● Four anode-common element wiring of MA8120
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MA111
MAZL120D
MA8120
C100
MA8120
MAZL120D
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Untitled
Abstract: No abstract text available
Text: MA111 Zener Diodes Composite Elements MAZL120D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 0 to 0.1 0.8 +0.2 1.1 -0.1 Average forward current
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MA111
MAZL120D
MA8120
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PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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IRFPS40N50L
Abstract: SiHFPS40N50L
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 • Lower Gate Charge Results in Simpler Drive
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IRFPS40N50L,
SiHFPS40N50L
SUPER-247TM
18-Jul-08
IRFPS40N50L
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Untitled
Abstract: No abstract text available
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80
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IRFPS40N50L,
SiHFPS40N50L
2002/95/EC
Super-247
18-Jul-08
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7912UC
Abstract: IRFP31N50L IRFP31N50LPbF ISD 1400 d irfp31n50
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
O-247
2002/95/EC
18-Jul-08
7912UC
IRFP31N50L
IRFP31N50LPbF
ISD 1400 d
irfp31n50
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
O-247
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration
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IRFPS35N50L,
SiHFPS35N50L
SUPER-247TM
12-Mar-07
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IRFP31N50L
Abstract: irfp31n50
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
O-247
18-Jul-08
IRFP31N50L
irfp31n50
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IRFPS35N50L
Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Text: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration
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IRFPS35N50L,
SiHFPS35N50L
SUPER-247TM
18-Jul-08
IRFPS35N50L
SiHFPS35N50L-E3
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Untitled
Abstract: No abstract text available
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 • Lower Gate Charge Results in Simpler Drive
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IRFPS40N50L,
SiHFPS40N50L
SUPER-247TM
12-Mar-07
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IRFPS40N50L
Abstract: SiHFPS40N50L IRFPS40N50LPBF
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80
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IRFPS40N50L,
SiHFPS40N50L
2002/95/EC
Super-247
11-Mar-11
IRFPS40N50L
IRFPS40N50LPBF
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Untitled
Abstract: No abstract text available
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80
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IRFPS40N50L,
SiHFPS40N50L
2002/95/EC
Super-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFPS40N50
Abstract: TO274
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80
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IRFPS40N50L,
SiHFPS40N50L
2002/95/EC
Super-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFPS40N50
TO274
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28AB
Abstract: No abstract text available
Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80
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IRFPS40N50L,
SiHFPS40N50L
2002/95/EC
Super-247
11-Mar-11
28AB
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRFP31N50LP
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP31N50LP
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20/A4008ER
Abstract: 253/C25 02D CXA4008ER
Text: MEMS Sensing and Driver for Laser Projector CXA4008ER Description The CXA4008ER is MEMS sensing and driver IC for Laser Beam scanning type Laser Projector. Features ◆ MEMS Horizontal signal sensing ◆ 12bitSAR-ADC ◆ Instrumentation ◆ Detection ◆ Voltage
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CXA4008ER
CXA4008ER
12bitSAR-ADC
16bitSAR-ADC
16bitDAC
CXA4007ER
A4008ER
20/A4008ER
253/C25 02D
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diode hp 2835 schottky
Abstract: diode hp 2800 diode hp 2810 HP 2810 mark a7 sot23 DIODE hp 2800 diode HP 2804 HP 2835 306 HSMS-28XX diode hp 2835
Text: Thp% mürA HEW LETT« PACKARD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features • Surface M ount SOT-23/SOT143 Package • Low Turn-O n V oltage A s Low as 0.34 V a t 1 inA • Low FIT (F ailu re in Tim e) Rate* • Six-sigm a Q uality L evel
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OCR Scan
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HSMS-28XX
OT-23/SOT143
1997Hewlett-Packard
5965-8839E
5966-0947E
diode hp 2835 schottky
diode hp 2800
diode hp 2810
HP 2810
mark a7 sot23 DIODE
hp 2800 diode
HP 2804
HP 2835 306
diode hp 2835
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Untitled
Abstract: No abstract text available
Text: Benign Environment DC-DC Converters <40 W FI-Family TOKO DC-DC Converters FI-Family Input to output electric strength test 700 V DC Single output of 5 ,1 2 or 15 V DC/1.5.3 W Dual output of ±12 or ±15 V D C /1 .5 .3 W Input voltage from 2.7 V up to 7 V DC
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OCR Scan
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PDF
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97/IN
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