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    MARKING 1AD Search Results

    MARKING 1AD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 1AD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    marking 1af

    Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		PDF SMB10J5 DO-214AA 50mVp-p 11-Mar-04 marking 1af marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW

    marking CODE 1BS

    Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		PDF SMB10J5 DO-214AA DO-214AA 08-Apr-05 marking CODE 1BS 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 MARKING 1BW 1BW MARKING marking CODE 1BH

    marking code AE rc SMD Transistor

    Abstract: eprom 92112 SMD TRANSISTOR MARKING BF marking code EA SMD Transistor SMD TRANSISTOR MARKING by 9f
    Text: INTEGRATED CIRCUITS DATA SHEET P83C524; P80C528; P83C528 8-bit microcontrollers Product specification File under Integrated Circuits, IC20 1997 Dec 15 Philips Semiconductors Product specification P83C524; P80C528; P83C528 8-bit microcontrollers CONTENTS 15


    Original     		PDF P83C524; P80C528; P83C528 OT187 OT307 OT129 marking code AE rc SMD Transistor eprom 92112 SMD TRANSISTOR MARKING BF marking code EA SMD Transistor SMD TRANSISTOR MARKING by 9f

    marking code 1BL Diode

    Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode 1bw 83 marking code 1AW J-STD-002B JESD22-B102D marking code 1ay

    smb8j28

    Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 smb8j28 mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH

    marking code 1BL Diode

    Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 18-Jul-08 marking code 1BL Diode marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002

    marking code 1BL Diode

    Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL

    marking code 1AW

    Abstract: marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code 1AW marking code 1ay

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    mosfet 1ak

    Abstract: SMB8J17CA SMB8J14C marking 1AD JESD22-B102 J-STD-002 SMB10 SMB10J15 SMB8J40CA SMB10J16A
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		PDF SMB10 J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 11-Mar-11 mosfet 1ak SMB8J17CA SMB8J14C marking 1AD JESD22-B102 J-STD-002 SMB10J15 SMB8J40CA SMB10J16A

    AEP13-3993I

    Abstract: No abstract text available
    Text: RoHS EP13 Power Transformer AEP13-3993I EP13 Package in SMD Operating temperature range: -40ºC to +85ºC Reflow Condition: Maximum reflow temperature is 250ºC/-5ºC time is 20~40 sec. Refer to IPC/JEDECJ-STD-020 standard . Leakage Inductance Inductance


    Original     		PDF AEP13-3993I IPC/JEDECJ-STD-020 250KHz 250KHz, 127uH AEP13-3993I

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UTX105-UTX125, UTX205-UTX225 SUPER-FAST RECOVERY RECTIFIERS MAXIMUM RATINGS Characteristic 1 amp series 2 amp series 1.0A 0.5A 2.0A 1.0A 20A 25A Maximum average DC output current @ TA = 25°C @ TA = 100°C Non-repetitive sinusoidal


    Original     		PDF UTX105-UTX125, UTX205-UTX225 UTX205 UTX220 UTX225 UTX215

    Untitled

    Abstract: No abstract text available
    Text: PT6100 Series 1 Amp Adjustable Positive Step-down Integrated Switching Regulator SLTS029A Revised 6/30/2000 • • • • • • • 90% Efficiency Adjustable Output Voltage Internal Short Circuit Protection Over-Temperature Protection On/Off Control (Ground Off)


    Original     		PDF PT6100 SLTS029A PT6100

    25X32AVSIG

    Abstract: WSON register status soic 208 mil 25X32 fr 0190 W25X32AVSSIG SPIFLAS SPIflash
    Text: W25X32A 32M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI -1- Publication Release Date: August 24, 2008 Preliminary - Revision A W25X32A Table of Contents 1 GENERAL DESCRIPTION . 4


    Original     		PDF W25X32A 32M-BIT 208-MIL 25X32AVSIG WSON register status soic 208 mil 25X32 fr 0190 W25X32AVSSIG SPIFLAS SPIflash

    25X64VFIG

    Abstract: 25X64VIG W25X64 WINBOND W25X64 25x64vf 25X64 w25*64 W25X64V JSTD-20C WINBOND W25*64
    Text: W25X64 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI -1 - Publication Release Date: December 19, 2008 Revision A W25X64 Table of Contents 1 GENERAL DESCRIPTION. 4


    Original     		PDF W25X64 64M-BIT 300-MIL 300-MIL, 25X64VFIG 25X64VIG W25X64 WINBOND W25X64 25x64vf 25X64 w25*64 W25X64V JSTD-20C WINBOND W25*64

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC4672 Features • • • Ideally Suited For Automatic Instertion Untral Small Surface Mount Package Pb Free Package are Vailable


    Original     		PDF 2SC4672 OT-89

    2SC4672Q

    Abstract: 2sc4672 marking dkq 2sc4672 dkq 2SC4672-Q 2SC4672 2sc4672 marking
    Text: MCC TM Micro Commercial Components 2SC4672 2SC4672-P 2SC4672-Q   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Ideally Suited For Automatic Instertion Untral Small Surface Mount Package


    Original     		PDF 2SC4672 2SC4672-P 2SC4672-Q OT-89 2SC4672Q 2sc4672 marking dkq 2sc4672 dkq 2SC4672-Q 2SC4672 2sc4672 marking

    25X32VSIG

    Abstract: 25X32VFIG 25x32vs WINBOND W25X32 W25X32 25x32v W25X32VSFIG W25X32VSSIG W25X32VSFI W25X32V
    Text: W25X32 32M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI -1- Publication Release Date: December 19, 2008 Revision A W25X32 Table of Contents 1 GENERAL DESCRIPTION . 4


    Original     		PDF W25X32 32M-BIT 208-MIL. 300-MIL 25X32VSIG 25X32VFIG 25x32vs WINBOND W25X32 W25X32 25x32v W25X32VSFIG W25X32VSSIG W25X32VSFI W25X32V

    ci 94vo

    Abstract: 304G 305G 307G 308G HER301G HER308G marking AOO
    Text: TAIWAN SEMICONDUCTOR s HER301G - HER308G 3.0 AMPS. Glass Passivated High Efficient Rectifiers tò RoHS D-Q-2 Q-1AD. COM PLIANCE — .223 ÌS.6 ¡197 <5.0) r 1.C 25.4) V H. Features •fr <* v ■fr <> v G la ss p a s s iv a le d c h ip Junction. H ig h e ffic ie n c y , L o w V F


    OCR Scan     		PDF HER301G HER308G MlL-STD-202. IW-50 ci 94vo 304G 305G 307G 308G HER308G marking AOO

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    2N1011

    Abstract: marking 67A
    Text: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)


    OCR Scan     		PDF MIL-S-19500/67A MIL-T-19500/67 50-WATT 2N1011 -65to 5961-AO78 2N1011 marking 67A

    9014 SOT 23

    Abstract: formel nf 7144A-1 9014 SOT equivalent cd 332 m UPS schematics and wiring diagrams T271I TT21 I3003
    Text: MIL-M-38510/332A 9 Auaust 1983 SUPEKbtUlffi MI L- M- 38 51 0/ 33 2 U SA F 27 May 1982 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON This specification Is approved for use by “« P i ­ ments and Agencies of the Department of Defense.


    OCR Scan     		PDF 38510/332A MIL-M-38510/332 MIL-M-38510. 9014 SOT 23 formel nf 7144A-1 9014 SOT equivalent cd 332 m UPS schematics and wiring diagrams T271I TT21 I3003