Untitled
Abstract: No abstract text available
Text: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BAT64.
BAT64
BAT64-02W
BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
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Untitled
Abstract: No abstract text available
Text: BAS3020B. Schottky Rectifier Diode • Reverse voltage: 30 V • Forward current: 2 A • Low forward voltage: 0.53 V typ. @ 2 A • Low leakage current 40 µA typ. @ 30 V • Low capacitance: 30 pF typ. @ 5 V • High ESD / transient robustness according to:
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BAS3020B.
ISO7637-2:
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Untitled
Abstract: No abstract text available
Text: BAS3007A. Low VF Schottky Diode Array • Reverse voltage: 30 V • Forward current: 0.9 A • Small diode quad array for polarity independence, reverse polarity protection and low loss bridge rectification • Very low forward voltage: 0.5 V typ. @ 0.7 A per diode
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BAS3007A.
BAS3007A-RPP
OT143
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8F sot23
Abstract: No abstract text available
Text: BAT240. High Voltage Schottky Diode • Rectifier Schottky diode for telecommunication and industrial applications • High reverse voltage: 240 V • For power supply applications • For clamping and protection in high voltage applications • Pb-free RoHS compliant package 1)
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BAT240.
BAT240A
8F sot23
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256-30695-1183
Abstract: 54289
Text: 403030.01CK 3/11/02 3:28 PM Page 17 Connectors for Copper Conductor COMPRESSION Two Hole Lugs - Standard Barrel 600V to 35KV Material: High Conductivity Wrought Copper Finish: Electro Tin Plate ® Wire Size Cat. No. 256-30695-1302 54204 256-31426-33 256-31426-33PH
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256-31426-33PH
256-30695-1183
54289
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H12F
Abstract: ERX2S
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
H12F
ERX2S
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Untitled
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
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Untitled
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
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Untitled
Abstract: No abstract text available
Text: Metal Film Resistors, Low Resistance Value Metal Film Resistors Type: ERXL Low Resistance Value (0.5 W, 1 W, 2 W) • Features ● ● ● ● Miniaturized Non-flammable Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 9 Product Code
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12SWE
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Untitled
Abstract: No abstract text available
Text: Metal Film Resistors, Low Resistance Value Metal Film Resistors Type: ERXL Low Resistance Value (0.5 W, 1 W, 2 W) • Features ● ● ● ● Miniaturized Non-flammable Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 9 Product Code
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microchip inverter application notes
Abstract: TC1221 TC1221ECH TC1222 TC1222ECH negative voltage inverter SC-74 marking code Mi
Text: TC1221 TC1222 High Frequency Switched Capacitor Voltage Converters with Shutdown in SOT Packages FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC1221/1222 are CMOS “charge-pump” voltage converters in ultra-small 6-Pin SOT-23A packages. They
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TC1221
TC1222
TC1221/1222
OT-23A
TC1221,
750KHz
TC1222.
TC1221/1222-2
DS21367A
microchip inverter application notes
TC1221
TC1221ECH
TC1222
TC1222ECH
negative voltage inverter
SC-74 marking code Mi
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Untitled
Abstract: No abstract text available
Text: Metal Film Resistors, Low Resistance Value Metal Film Resistors Type: ERXL Low Resistance Value (0.5 W, 1 W, 2 W) • Features ● ● ● ● Miniaturized Non-flammable Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 9 Product Code
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Solid State Relay OCMOS FET PS7801F-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 0.9 pF 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7801F-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side
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PS7801F-1A
PS7801F-1A
PS72xx
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MATSUA S111
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) n Features l Resistance Value Correspondence A resistance value range is an electric power type resistor of 0.1 W to 100 kW.
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ERGD
Abstract: No abstract text available
Text: Anti-Pulse Power Resistors Anti-Pulse Power Resistors Type: ERGD 0.5 W, 1 W, 2 W, 3 W • Features ● ● ● ● ● Miniaturized Non-flammable Anti-Pulse Characteristic Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 ( Product Code
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erx 02
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Resistance Value Correspondence A resistance value range is an electric power type resistor of 0.1 W to 100 kW.
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FVXO-HC53
Abstract: FVXO-HC73 FVXO-LC53 FVXO-LC73 FXO-HC53 FXO-HC73 FXO-LC53 FXO-LC73 FXO-PC53 FXO-PC73
Text: XpressO Package Dimensions, Marking & Labeling Dimensions, marking patterns and product labeling for the two currently available Fox XpressO packages are shown below. 7 x 5 mm 7.5 5 5x x3.2 3.2mm mm Typical XpressO marking configurations are illustrated below. Note that in all cases, Pin 1
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SG180DY,
12F-6
FOX-G-3544
FVXO-HC53
FVXO-HC73
FVXO-LC53
FVXO-LC73
FXO-HC53
FXO-HC73
FXO-LC53
FXO-LC73
FXO-PC53
FXO-PC73
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ERGD
Abstract: No abstract text available
Text: Anti-Pulse Power Resistors Anti-Pulse Power Resistors Type: ERGD 0.5 W, 1 W, 2 W, 3 W • Features ● ● ● ● ● Miniaturized Non-flammable Anti-Pulse Characteristic Automatic Insertion RoHS compliant ■ Explanation of Part Numbers 1 2 3 & 3 ( Product Code
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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BC846W;
BC847W
OT323
BC856W
BC857W.
BC846W
BC847AW
BC846AW
BC847BW
BC846BW
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BC847BT
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification, especially
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BC846T;
BC847T
SC-75
BC856T
BC857T.
BC846AT
BC847BT
BC846BT
BC847CT
BC847AT
BC847BT
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NPN BC846B SOT23
Abstract: BC847 BC847C BC846B BC847 philips BC846 BC846A BC847A BC847B BC856
Text: Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
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BC846;
BC847
BC856
BC857.
BC846
BC847A
BC846A
BC847B
BC846B
BC847C
NPN BC846B SOT23
BC847 philips
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MARKING 1F
Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Text: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
MARKING 1F
CSC2712
MARKING 1G TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: CI BAS16 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BASI 6 = A6 _3.0_ 2.8 0.14 0.48 038 nr L 0.70 0.50 3 1 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.6 1.4 1.2 2.4
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BAS16
150mA
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Untitled
Abstract: No abstract text available
Text: CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m CSC2712Y*1E CSC2712GR G =*1F CSC2712BL(L)=1 G 3.0_ 2.8 “ Û.09 o3a Pin configuration 1 » BASE 2 = EM ITTER 3 = COLLECTOR 0.14 o.4a L
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CSC2712
CSC2712Y
CSC2712GR
CSC2712BL
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