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    MARKING 1P Z Search Results

    MARKING 1P Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 1P Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


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    PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    RSF05G1-1P

    Abstract: No abstract text available
    Text: RSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage Repetitive Peak Reverse Voltage z Average On−State Current


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    PDF RSF05G1-1P RSF05G1-3P RSF05G1-5P 500mA RSF05G1-1P RSF05G1-3P

    marking 1p Z

    Abstract: No abstract text available
    Text: RSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V : VRRM = 400V


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    PDF RSF05G1-1P RSF05G1-3P RSF05G1-5P 500mA RSF05G1-5P marking 1p Z

    Untitled

    Abstract: No abstract text available
    Text: RSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS z Repetitive Peak Off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400V : VRRM = 400V


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    PDF RSF05G1-1P RSF05G1-3P RSF05G1-5P 500mA RSF05G1-5P

    BZT52C15S

    Abstract: No abstract text available
    Text: PRELIMINARY BZT52C2V7S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data •


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    PDF BZT52C2V7S BZT52C39S OD-323 OD-323, MIL-STD-202, DS30093 BZT52C15S

    TOSHIBA THYRISTOR

    Abstract: No abstract text available
    Text: URSF05G49-1P, URSF05G49-3P, URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P LOW POWER SWITCHING AND CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400 V Repetitive Peak Reverse Voltage: VRRM = 400 V


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    PDF URSF05G49-1P, URSF05G49-3P, URSF05G49-5P TOSHIBA THYRISTOR

    Untitled

    Abstract: No abstract text available
    Text: URSF05G49-1P, URSF05G49-3P, URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P LOW POWER SWITCHING AND CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400 V Repetitive Peak Reverse Voltage: VRRM = 400 V


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    PDF URSF05G49-1P, URSF05G49-3P, URSF05G49-5P

    Untitled

    Abstract: No abstract text available
    Text: Multi-level terminal block - ST 2,5-PE/3L/1P - 3041969 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid


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    PDF com/us/products/3041969

    part MARKING k48

    Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
    Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E


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    PDF CMOD2004 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO BC846A CMSZ5250B CMST3904 BC846B part MARKING k48 marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2

    fairchild 1P

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.


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    PDF MMBD1201 OT-23 MMBD1204A MMBD1203 MMBD1205A fairchild 1P

    Untitled

    Abstract: No abstract text available
    Text: PDS, #26 PDS, #14 IDNM' "PRINT RMN FEB, 08, 2 0 0 0 IS S U E D , CDNT A C T DETAIL DATE KEY TYPE YEA R MDNTH m m CDDE 9, X, Y, Z 1, 2 , , CONTACT POS. MARKING 4PLC .(INCLUDE THE BACK SIDE) 3.8 ., C D N T A C T 1P L A T I N G 3, MATING CDNNECTDR NDTE GDLDCO, 1u n MIN, ) DVER


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    PDF C1997)

    marking 1p Z

    Abstract: ina 124
    Text: BZX84C2V7W - BZX84C51W 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200m W Power Dissipation Zener Voltages from 2.7V - 39V Ultra-Small Surface Mount Package Mechanical Data_ Case: SO T-323, Molded Plastic Terminals: Solderable per M IL-STD-202,


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    PDF BZX84C2V7W BZX84C51W 200mW OT-323 T-323, IL-STD-202, DS30066 BZX84C39W marking 1p Z ina 124

    BZX84C3VO

    Abstract: BZX84C2V7W BZX84C39W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C51W marking 1p Z
    Text: PRELIM INARY BZX84C2V7W - BZX84C51W VISHAY 200mW SURFACE MOUNT ZENER DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Planar Die Construction 200m W Power Dissipation Zener Voltages from 2.7V - 39V Ultra-Small Surface Mount Package SOT-323 - H ; h“ A Mechanical Data_


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    PDF BZX84C2V7W BZX84C51W 200mW OT-323, MIL-STD-202, OT-323 DS30066 BZX84C39W BZX84C3VO BZX84C39W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C51W marking 1p Z

    S3 marking DIODE

    Abstract: marking CE diode Marking Code s3 diode MARKING CODE 1P marking code cj MARKING S1 100S SD101AWS SD101BWS SD101CWS
    Text: SD101AWS - SD101CWS VISHAY SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE Ì L IT E M Z I POW ER SEMICONDUCTOR Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-small Surface Mount Package


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    PDF SD101AWS SD101CWS OD-323, MIL-STD-202, SD101BWS SD101CWS OD-323 DS30078 S3 marking DIODE marking CE diode Marking Code s3 diode MARKING CODE 1P marking code cj MARKING S1 100S

    MARKING FZ

    Abstract: BAS19W BAS20W BAS21W marking kt3
    Text: BAS19W-BAS21W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323


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    PDF BAS19W-BAS21W OT-323, MIL-STD-202, BAS19W BAS20W BAS21W OT-323 100mA 200mA DS30118 MARKING FZ marking kt3

    bav21 SOD323

    Abstract: diode T3 Marking MARKING FZ BAV19WS BAV20WS BAV21 BAV21WS
    Text: BAV19WS - BAV21WS VISH AY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance


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    PDF BAV19WS BAV21WS OD-323, MIL-STD-202, BAV20WS BAV21WS OD-323 100mA 200mA bav21 SOD323 diode T3 Marking MARKING FZ BAV21

    S4 DIODE schottky Vishay

    Abstract: marking s6 vishay marking S4 schottky S4 marking vishay marking S5 S4 DIODE schottky schottky marking S4 100S SD103AWS SD103BWS
    Text: PRELIM INARY SD103AWS - SD103CWS VISHAY SCHOTTKY BARRIER SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance Ultra-Small Surface Mount Package


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    PDF SD103AWS SD103CWS OD-323, MIL-STD-202, SD103BWS SD103CWS OD-323 200mA S4 DIODE schottky Vishay marking s6 vishay marking S4 schottky S4 marking vishay marking S5 S4 DIODE schottky schottky marking S4 100S

    transistor marking 1p Z

    Abstract: 2N7002W
    Text: PRELIMINARY 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Low On-Resistance: 2 .5 Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package


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    PDF 2N7002W OT-323, MIL-STD-202, OT-323 DS30099 2N7002W transistor marking 1p Z

    marking code zener diode wl

    Abstract: marking WM wk marking diode diode marking w8 marking code w6 marking W6 diode VISHAY WL ZENER zener code wn BZT52C2V7S BZT52C39S
    Text: PRELIMINARY BZT52C2V7S - BZT52C39S VISHAY SURFACE MOUNT ZENER DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes H He|^ □


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    PDF BZT52C2V7S BZT52C39S OD-323, MIL-STD-202, OD-323 BZT52C18S BZT52C20S BZT52C22S BZT52C24S BZT52C27S marking code zener diode wl marking WM wk marking diode diode marking w8 marking code w6 marking W6 diode VISHAY WL ZENER zener code wn BZT52C39S

    100S

    Abstract: 1N4448WS
    Text: PRELIM INARY 1N4448WS VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H □ I • • G Case: SO D-323, Plastic


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    PDF 1N4448WS OD-323, MIL-STD-202, OD-323 1N4448WS DS30096 100S

    100S

    Abstract: 1N4148WS BAV16WS VISHAY 1N4148WS Rev
    Text: PRELIM INARY 1N4148WS / BAV16WS VISH AY SURFACE MOUNT FAST SWITCHING DIODE LITEM ZI Ì POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H I /k B


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    PDF 1N4148WS BAV16WS OD-323, MIL-STD-202, OD-323 DS30097 100S BAV16WS VISHAY 1N4148WS Rev