Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING 20 ESD Search Results

    MARKING 20 ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING 20 ESD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2 SOT23-3

    Abstract: sot23 marking zs BFR35AP BFR35A
    Text: BFR35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking


    Original     		PDF BFR35AP VPS05161 Aug-01-2001 K2 SOT23-3 sot23 marking zs BFR35AP BFR35A

    Untitled

    Abstract: No abstract text available
    Text: BFR35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking


    Original     		PDF BFR35AP VPS05161

    Untitled

    Abstract: No abstract text available
    Text: BFR35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking


    Original     		PDF BFR35AP VPS05161

    BCW66

    Abstract: BFR35AP MARKING CODE 21E SOT23
    Text: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking GEs Pin Configuration


    Original     		PDF BFR35AP 15may BCW66 BFR35AP MARKING CODE 21E SOT23

    marking code f 25 x

    Abstract: marking code R1 sot23
    Text: CMPLC1V5 CMPLC1V5D SURFACE MOUNT LOW CAPACITANCE SILICON ESD TRANSIENT DATA LINE PROTECTOR SOT-23 CASE MARKING CODES: CMPLC1V5 SINGLE : CLV5 CMPLC1V5D (DUAL): CV5D MAXIMUM RATINGS: (TA=25°C) Reverse Stand-off Voltage Peak Pulse Power (8 x 20µs Waveform)


    Original     		PDF OT-23 27-January marking code f 25 x marking code R1 sot23

    Untitled

    Abstract: No abstract text available
    Text: BFR 35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking


    Original     		PDF VPS05161 OT-23 900MHz Nov-30-2000

    80846

    Abstract: 022241 gummel
    Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143


    Original     		PDF OT-143 Q62702-F1611 900MHz Dec-11-1996 80846 022241 gummel

    Untitled

    Abstract: No abstract text available
    Text: BFR 35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP


    Original     		PDF VPS05161 OT-23 Oct-13-1999

    Untitled

    Abstract: No abstract text available
    Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs


    Original     		PDF BFS17P

    Untitled

    Abstract: No abstract text available
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs


    Original     		PDF BFS17W OT323

    Untitled

    Abstract: No abstract text available
    Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs


    Original     		PDF BFS17P

    F804

    Abstract: Q62702-F804
    Text: PNP Silicon RF Transistor ● For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. ● Complementary type: BFQ 71 NPN . BFQ 76 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel)


    Original     		PDF Q62702-F804 F804 Q62702-F804

    RF AMPLIFIER marking S1

    Abstract: No abstract text available
    Text: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900


    Original     		PDF MRFIC0970/D MRFIC0970 QFN-20) MRFIC0970 QFN-20 GSM900 QFN-20 RF AMPLIFIER marking S1

    SMD MARKING CODE 901

    Abstract: CFY 19 CFY 10 GaAs FET cfy 14
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1393 Q62702-F1394 GSO05553 SMD MARKING CODE 901 CFY 19 CFY 10 GaAs FET cfy 14

    GMA marking

    Abstract: IC 2272
    Text: BFP 182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R


    Original     		PDF OT-143R 900MHz Oct-12-1999 GMA marking IC 2272

    BFT92

    Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
    Text: BFT92 PNP Silicon RF Transistor 3  For broadband amplifiers up to 2 GHz at collector currents up to 20 mA  Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration


    Original     		PDF BFT92 VPS05161 900MHz Jul-16-2001 BFT92 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


    OCR Scan     		PDF V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a

    bft97

    Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
    Text: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFT97 BFT97 Q62702-F514 fl235bGS D0b74SS fl23Sb05 00b745b transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Transistor BFT 10 MARKING CODE t54

    Transistor BFR 97

    Abstract: bfr 49 transistor BFR34A
    Text: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1


    OCR Scan     		PDF Q62702-F346-S1 A23Sb05 D0b7270 Transistor BFR 97 bfr 49 transistor BFR34A

    sot-23 MARKING CODE ZA

    Abstract: BFQ29P
    Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFQ29P 62702-F sot-23 MARKING CODE ZA BFQ29P

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF Q62702-F456 00b743fi 623SbD5 BFT66 flE35bOS

    bft92

    Abstract: DB642
    Text: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel)


    OCR Scan     		PDF BFT92 OT-23 bft92 DB642

    BFR90

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration


    OCR Scan     		PDF Q62702-F560 flB35b05 BFR90

    CFY75

    Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
    Text: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF Q62702-F1368 Q62702-F1369 235b05 DDL75MG CFY75 EHT08184 fl235b05 0QL7S41 CFY75 cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19