Z02W20V
Abstract: No abstract text available
Text: SEMICONDUCTOR Z02W20V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 20X No. 1 Item Marking Device Mark 20 Z02W20V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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Z02W20V
OT-23
Z02W20V
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2321
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301S P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301S
OT-23
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CJ2302
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2
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OT-23
CJ2302
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2102 SOT-323 N-Channel 20-V D-S MOSFET FEATURE z TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 1. GATE 2. SOURCE 3. DRAIN MARKING: TS2
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OT-323
CJ2102
OT-323
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
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CJ2302
Abstract: MOSFET SOT-23 cj230 mosfet vgs 5v marking diode S2 sot-23 CJ2302 S2
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2
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OT-23
CJ2302
OT-23
Width300
MOSFET SOT-23
cj230
mosfet vgs 5v
marking diode S2 sot-23
CJ2302 S2
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2321
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302S N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2U
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OT-23
CJ2302S
OT-23
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CJ2301
Abstract: cj230 MOSFET SOT-23 P-Channel TrenchFET Power MOSFET SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1
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OT-23
CJ2301
OT-23
cj230
MOSFET SOT-23
P-Channel TrenchFET Power MOSFET SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2302 N-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S2
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OT-23
CJ2302
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2312
OT-23
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Untitled
Abstract: No abstract text available
Text: DA221 Switching Diode SOT-523 Features Bias circuits Protection circuits MARKING: K Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 20 V DC reverse voltage
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DA221
OT-523
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h 033
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5889PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 20 Volts CURRENT 3 Ampere FEATURE * Small surface mounting type. SOT-23 * Low Collector-Emitter saturation voltage. .019 (0.50) .066 (1.70) .119 (3.04) MARKING .110 (2.80)
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CHT5889PT
OT-23)
OT-23
160Typ.
h 033
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CHT5889GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5889GP SURFACE MOUNT PNP Switching Transistor VOLTAGE 20 Volts CURRENT 3 Ampere FEATURE * Small surface mounting type. SOT-23 * Low Collector-Emitter saturation voltage. .019 (0.50) .066 (1.70) .119 (3.04) MARKING .110 (2.80)
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CHT5889GP
OT-23)
OT-23
160Typ.
CHT5889GP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT8050PT SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. SOT-23 * High DC current . .019 (0.50) * D805 * E805 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10)
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CHT8050PT
OT-23)
OT-23
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CHT8050GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT8050GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. SOT-23 * High DC current . .019 (0.50) * D805 * E805 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10)
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CHT8050GP
OT-23)
OT-23
CHT8050GP
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D855
Abstract: C855 transistor marking c855
Text: CHENMKO ENTERPRISE CO.,LTD CHT8550PT SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. SOT-23 * High DC current . .019 (0.50) * C855 * D855 * E855 .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10)
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CHT8550PT
OT-23)
OT-23
D855
C855
transistor marking c855
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71080
Abstract: Si1902DL
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
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Si1902DL
OT-363
SC-70
S-20880--Rev.
10-Jun-02
71080
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ZENER DIODES SOT-23
Abstract: marking 18j sot23 MARKING 8S SOT-23
Text: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28
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OCR Scan
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MMBZ5221BL
MMBZ5222BL
MMBZ5223BL
MMBZ5224BL
MMBZ5225BL
MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL
ZENER DIODES SOT-23
marking 18j sot23
MARKING 8S SOT-23
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SOT-23 marking AFE
Abstract: marking code AFE CE040
Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Values Unit
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OCR Scan
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Q6800-A6477
OT-23
SOT-23 marking AFE
marking code AFE
CE040
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol
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OCR Scan
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Q6800-A6477
OT-23
fi235b05
012250e
fl235b05
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marking C1
Abstract: TMPTA70 TMPT5401 h2t1
Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0
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OCR Scan
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OT-23/TO-236AB
BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW67A
BCW67B
BCW68F
marking C1
TMPTA70
TMPT5401
h2t1
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