AT91M40400
Abstract: No abstract text available
Text: Errata Sheet V3.2 This errata sheet refers to devices with the following marking: AT91M40400 25AC, 25AI or 33AC Internal product reference 55568A • I/O Pads are not 5V Tolerant • One Half-cycle NUB on First Access to a Chip Select Bank • EBI Abort Generation
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AT91M40400
5568A
16-bit
04/00/0M
AT91M40400
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Untitled
Abstract: No abstract text available
Text: Type TDL • Solid Tantalum Capacitors MallorY Tough Plastic Case UL94V0 Flammability Rating Laser Marking Clarity and Permanence Low Cost Low DCL Low ESR & Impedance Temperature Stable Long Shelf Life High Shock & Vibration GENERAL SPECIFICATIONS Capacitance Tolerance:
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UL94V0
TDL185
050S1C
TDL225
050S1D
TDL275
TDL335
TDL395
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S2L20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package : AX10 S2L20U Unit : mm W eight 0.65g Typ> 2 0 0 V 1.5A Feature 26.5 • Low Noise • tnr=35ns • s v -r x • trr=35ns (.1 • 7 5 'T /n - J b •iS te .F A (R 4 - 2 - * «•ríüíiidíiiiiM Marking
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S2L20U
CJ533-1
S2L20U
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JIS F05 connectors
Abstract: No abstract text available
Text: SMF05 SEMTECH Preliminary - October 15, 1998 TVS Diode Array For ESD & Latch-Up Protection FEATURES The SMF series TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. They
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SMF05
SMF12
TEL805-498-2111
SC70-5L
CA91320
JIS F05 connectors
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2sa1235
Abstract: ha15090
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.
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2SA1235
2SA1235
-100mA,
-10mA)
O-236
SC-59
270Hz
ha15090
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sot23 transistor marking y2
Abstract: 2N3905 MOTOROLA ts 3110 TRANSISTOR T29 marking X062 MMBT3906-2A 25CC 2N3905 2N4123 2N4401
Text: MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA SC Tb !>F|b3b75S4 G O ñ E D m <X S T R S ¿ R „ F ? 9 6D 8 2 0 4 1 T'Z^'/S MAXIMUM RATINGS Rating Sym bol Value U nit Coilector-Em itter Voltage VCEO 40 Vdc Collector-Base Voltage v CBO 40 Vdc Emitter-Base Voltage
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burr-brown electrometer amplifiers
Abstract: No abstract text available
Text: SURR —BR0 üJN CORP H E ] I1 7 3 1 3 L .C n ni • -urjjjjbü q üuJ,5331 T B U R R -B R O W N - 1 7 I I COMPONENTS e! - / S ' - OPA128SM/883B REVISION NONE JULY, 1988 D ifet® Electrometer-Grade MILITARY OPERATIONAL A M PLIFIER
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OPA128SM/883B
150fA
110dB
MIL-STD-883
OPA128SM/883B
MIL-STD-833
for/883B
burr-brown electrometer amplifiers
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MARKING 5C0
Abstract: No abstract text available
Text: T L C O M P A T IB L E * ECOVERY GENERATOR # T2L in p u t and o u tp u t # Pulse w id th s stable and precise # High o u tp u t d uty cycles # 8-pin Space Saver package fo r at least 10ns to o b ta in the d e sire d o u tp u t pulse. The d uration of the p o sitive in p u t pulse, a fte r th is tim e, has no
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500ns
MARKING 5C0
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KAH marking
Abstract: No abstract text available
Text: International IO R Rectifier pdhims IR F R /U 9 3 1 0 P R ELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated V qss — 400V ^DS(on) = 7 .0 Q
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IRFR9310)
IRFU9310)
EiA-481.
KAH marking
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marking L0KA
Abstract: LP2985AIM5-5.0* LOUA LOUA sot23 LOra sot23 Lp2985im5-3.3 LORB marking loub
Text: tß Semiconductor LP2985 Micropower SOT, 150 mA Low-Noise Ultra Low-Dropout Regulator Designed for Use with Very Low ESR Output Capacitors General Description Features The LP2985 is a 150 mA, 1ixed-output voltage regulator de signed to provide ultra low-dropout and low noise in battery
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LP2985
marking L0KA
LP2985AIM5-5.0* LOUA
LOUA sot23
LOra sot23
Lp2985im5-3.3 LORB
marking loub
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sot23 transistor marking 12E
Abstract: No abstract text available
Text: M O T OR O L A SC X S T R S /R F 12E D I t>3b72SM GGf lt iOGZ 1 | M AXIM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Symbol Max Unit PD 225 mW Rating Unit MMBTH10L CASE 318-03, STYLE 6
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3b72SM
MMBTH10L
OT-23
O-236AB)
sot23 transistor marking 12E
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Untitled
Abstract: No abstract text available
Text: h e d I i 7 3 i a t s 0 D i 5 3 cifl a | COMPONENTS -BROUN CORP ^ - b u rr-b ro w n « r e a j-H -M 'p » O P A 6 0 2 /8 8 3 B l OPA6Q2SM/883B REVISION NONE JULY, 1988 High-Speed Precision D ifet MILITARY OPERATIONAL AMPLIFIER
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0Di53c
OPA6Q2SM/883B
500nV
MIL-STD-883
OPA602/883B
OPA6Q2/883B
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TRANSISTOR AS3
Abstract: motorola darlington power transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP52T1 NPN Sm all-Signal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
BSP62T1
BSP52T1
TRANSISTOR AS3
motorola darlington power transistor
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diode pj 70
Abstract: pj 70 diode pj 417
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
OT-23
O-236AB)
156LT1
diode pj 70
pj 70 diode
pj 417
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F laE D M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 12 Vdc 'c 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Ro ja 556 °c/w Pd 300
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MMBT6427L
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol Value Unit C o lle ctor-E m itter Voltage v CEO -4 5 Vdc C ollector-Base Voltage v CBO -6 0 Vdc v EBO - 5 .0 Vdc 'c - 800 m Adc Em itter-Base Voltage C ollector C urrent — C ontinuous BCW68GLT1 CASE 318-07, STYLE 6 SOT-23 TO-236AB
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BCW68GLT1
OT-23
O-236AB)
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1RF9540
Abstract: IRF9540 application smd diode marking 78A IRF9540 rasistor 12v CFL DIODE marking ED 78A ScansUX102 IRF9540 mosfet
Text: PD-9.421C International E?R R ectifier IRF9540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ d s s ~ -1 0 0 V
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IRF9540
O-220
-100V
0-20O
1RF9540
IRF9540 application
smd diode marking 78A
rasistor
12v CFL
DIODE marking ED 78A
ScansUX102
IRF9540 mosfet
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR/U5505
IRFR5505)
IRFU5505)
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BC846BL
Abstract: BC847AL BC847CL 25CC BC846 BC846AL BC847 BC847BL BC848 BC848AL
Text: I 15 E D M A X IM U M RATINGS b3 b? as 4 QOflSöflM 1 I Sym bol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage V cB O 80 50 30 V Ve b o 6.0 6.0 5.0 V ic 100 100 100 mAdc Rating Emitter-Base Voltage Collector Current — Continuous
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BC846
BC847
BC848
BC848CL
BC846BL
BC847AL
BC847CL
25CC
BC846AL
BC847BL
BC848AL
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Untitled
Abstract: No abstract text available
Text: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . . . d esig n ed p rim a rily fo r h ig h -e fficie n cy UHF and VHF d e te cto r a p p lic a tio n s. R eadily adap ta b le to m a ny o th e r fa st s w itc h in g RF and d ig ita l a p p lic a tio n s . S u p p lie d in an ine xp e nsive p lastic package fo r low -co st, h ig h -v o lu m e
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MMBD301LT1
MMBD301L
MBD301,
MMBD301LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN Sm all-Signal Darlington Transistor M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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OT-223
PZTA14T1
inch/1000
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Untitled
Abstract: No abstract text available
Text: S Ì1024X Vishay Siliconix VISHAY New Product Dual N-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY rDS(on) (&) lD (mA) 0.70 @ V GS = 4.5 V 600 0.85 @ V GS = 2.5 500 V d s (V) 20 M OSFETs V 1.8-V Rated (£) 350 1.25 @ VqS = 1 8 V ESD Protected 2000 V
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1024X
S-03104--
08-Feb-01
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Datecode nl
Abstract: marking code nt R20 marking SRAS820 RPB 202
Text: TAIWAN SEM ICONDUCTO R s ' ;p b . SRAS820 - SRAS8150 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers D*PAK RoHS COMPLIANCE $ .insidi H -fS sf« *— •M S ll.lo 'i W iM ii Features -v-Y- 4«• I ja s s v s A i; For s urface mou nted a ppl icatio n Ideal for automated pick & place
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SRAS820
SRAS8150
SRAS8150)
Datecode nl
marking code nt
R20 marking
RPB 202
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve BO
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2SC5256
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