LC-XC1222P
Abstract: h1ca MARKING 22A
Text: Individual Data Sheets For main power supplies. Cycle long life type. LC-XC1222P Dimensions mm Terminal type (option) (187) (250) Contents indicated (including the recycle marking, etc.) are subject to change without notice. Battery case resin: standard (UL94HB)
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LC-XC1222P
UL94HB)
181mm
167mm
LC-XC1222P
h1ca
MARKING 22A
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hy512264
Abstract: hy512260 8 bit dRAM Controller
Text: HY512260 128Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and
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HY512260
128Kx16,
16-bit
16-bits
128Kx16
hy512264
hy512260
8 bit dRAM Controller
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HY514260B
Abstract: hy514260bjc HY514260
Text: HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514260B
256Kx16,
16-bit
16-bits
256Kx16
HY514260B
hy514260bjc
HY514260
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6ca DIODE
Abstract: DIODE marking 6CA DIODE 6ca marking 6ca vr 6ca marking 2ca
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
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CMUD2836
CMUD2838
OT-523
100mA
12-February
6ca DIODE
DIODE marking 6CA
DIODE 6ca
marking 6ca
vr 6ca
marking 2ca
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6ca DIODE
Abstract: DIODE 6ca DIODE marking 6CA marking code 18 surface mount diode marking 6ca CMUD2836 marking r4 diode CMUD2838 marking IR 2CA vr 6ca
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
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CMUD2836
CMUD2838
CMUD2838
OT-523
100mA
18-March
6ca DIODE
DIODE 6ca
DIODE marking 6CA
marking code 18 surface mount diode
marking 6ca
CMUD2836
marking r4 diode
marking IR 2CA
vr 6ca
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Untitled
Abstract: No abstract text available
Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded
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CMUD2836
CMUD2838
CMUD2838
OT-523
100mA
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6ca DIODE
Abstract: DIODE marking 6CA DIODE 6ca CMUD2836 CMUD2838 marking 2ca marking IR 2CA DIODE marking 2CA vr 6ca
Text: CMUD2836 CMUD2838 SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar
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CMUD2836
CMUD2838
CMUD2838
OT-523
CMUD2836
100mA
6ca DIODE
DIODE marking 6CA
DIODE 6ca
marking 2ca
marking IR 2CA
DIODE marking 2CA
vr 6ca
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Untitled
Abstract: No abstract text available
Text: CMUD2836 CMUD2838 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar
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CMUD2836
CMUD2838
CMUD2838
OT-523
CMUD2836
100mA
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PLC nais
Abstract: panasonic cmos image sensor IP67G PD-65 automotive oil pressure electronic sensor BUZZER WATERPROOF ANPD060 LED lights manufacturing technology nais pressure sensor panasonic varistor
Text: PD60/PD65 Image Processing Device Lineup MICRO-IMAGECHECKER PV310 Ultra high-speed, gray scale image processing Full set of interfaces with CompactFlash card and Ethernet A230 Character recognition & character checker type MICRO-IMAGECHECKER A110 Multi-checker V2 series
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PD60/PD65
PV310
ARCT1B270E
IP67G
ARCT1B270E
200607-5YT
PLC nais
panasonic cmos image sensor
IP67G
PD-65
automotive oil pressure electronic sensor
BUZZER WATERPROOF
ANPD060
LED lights manufacturing technology
nais pressure sensor
panasonic varistor
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24 conductor fiber
Abstract: RG6 50 ohm coaxial cable RG6 coaxial cable utp cable coaxial 2RG6
Text: POST COMPOSITE CABLE 2 CAT5E + 2 RG6 QUAD + 2 FIBER 500’ WOODEN SPOOL part number: 294-2174 pg. 1 APPROVALS: MARKETING TECHNICAL SALES FINAL DATE: THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO VERTICAL CABLE AND MAY NOT BE DISCLOSED OR TRANSMITTED TO ANY OTHER
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350Mhz,
24AWG,
db/100m)
50Mhz:
100Mhz:
200Mhz:
700Mhz:
1000Mhz:
1800Mhz:
24 conductor fiber
RG6 50 ohm coaxial cable
RG6 coaxial cable
utp cable coaxial
2RG6
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samsung CL21
Abstract: CL21 105 j ECJ2VB1H104K 0805B104K500NT CL21B104KB C0805X7R500-104KNE CL21B104KBFNNNC vishay 01005 C0805X7R500 CL21 B 474
Text: Cross Reference Guide Chip Capacitors Venkel P/N C0805 X7R 500 Series/Size Temperature See Chart Characteristic Rated Voltage Capacitance 1st two digits pico - Farads are significant 1st two digits followed by are significant, number of zeroes. followed by
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C0805
C0805X7R500-104KNE
VJ0805Y104KXAAT
samsung CL21
CL21 105 j
ECJ2VB1H104K
0805B104K500NT
CL21B104KB
CL21B104KBFNNNC
vishay 01005
C0805X7R500
CL21 B 474
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6ca DIODE
Abstract: marking code 533 DIODE 6ca DIODE marking 6CA marking 6ca ON Semiconductor marking AN
Text: Central CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DUAL, COMMON ANODE DUAL, COMMON CATHODE MAXIMUM RATINGS: MARKING CODE: 2CA MARKING CODE: 6CA TA=25°C Peak Repetitive Reverse Voltage SYMBOL
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CMUD2836
CMUD2838
CMUD2838
CPD63
18-March
6ca DIODE
marking code 533
DIODE 6ca
DIODE marking 6CA
marking 6ca
ON Semiconductor marking AN
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2
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OT-23
OT-23
MMBD2836
MBAW56
MMBD2835
MBAV74
MMBD2838
MBAV70
MMBD2837
MMBD6100
MMBD501
MMBV2098
MBAV99
A5 sot-23 single DIODE
MMBV105G
MMBV2097
A5 sot-23 DIODE
MBAS16
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itt 2222a
Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min
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PZT2222A
PZT2907A
PZTA14
BSP52
ZTA14
PZTA64
ZTA64
PTZA42
TZA42
itt 2222a
itt 2907A
motorola diode cross reference
PTZA92
2222a pinout
2907A
bs33
zta96
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marking q815
Abstract: No abstract text available
Text: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and
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128Kx16.
16-bit
16-bits
marking q815
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Untitled
Abstract: No abstract text available
Text: »flYUNDA» > - • HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60
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HY514260B
256Kx16,
16-bit
16-bits
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514260B
256KX16,
16-bit
16-bits
256Kx16
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Untitled
Abstract: No abstract text available
Text: HY51V4260B Series “H Y U N D A I 256K x 16-bit CMOS DRAM with /2CAS DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262.144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation.
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16-bit
HY51V4260B
HY51V4260BJC
HY51V4260BLJC
HY51V4260BSLJC
HY51V4260BLTC
16-bits
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C1617
Abstract: HY514260 HY514260BJ
Text: HY514260B Series •HYUNDAI 256K x 16-bit CMOS DRAM with /2CAS DESCRIPTION ORDERING INFORMATION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipa
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16-bit
HY514260B
HY514260BJC
HY514260BLJC
HY514260BSLJC
HY514260BLTC
HY514260BSLTC
HY514260BRC
C1617
HY514260
HY514260BJ
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CTU1S
Abstract: CTB-34 CTU-G3DR Sanken SH shv02
Text: SANKEN ELECTRIC U S A H E High Voltage Diodes D I 7 IVrm: 2—24kV ? m DDDDiaS Bio : 2mA/350mA r - 0 3 - Ì 5 T-02-0 SHV/HVR Absolute Maximum Ratings Rating/ Characteristics V rsm V rm lo If s m Tc kV (kV) (mA) (A) CC) SHV-02 Vf (V) 60HZ- Half Sine Wave
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2--24kV
2mA/350mA
T-02-0
SHV-02
SHV-03
SHV-06
SHV-08
SHV-10
SHV-12
SHV-14
CTU1S
CTB-34
CTU-G3DR
Sanken SH
shv02
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6ca DIODE
Abstract: DIODE marking 6CA
Text: Central" CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini" DUAL HIGH SPEED SILICON SWITCH ING DIODES CMUD2836 CMUD2838 DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed sili con switching diodes manufactured by the epitax
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CMUD2836
CMUD2838
CMUD2838
CONDIT25
12-February
6ca DIODE
DIODE marking 6CA
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GM3Z
Abstract: No abstract text available
Text: SANKEN E L E C T R I C Ï' î U S A HE Rectifier Diodes D | 7^0741 Vrm:100~1000V b □ O D D U 'i b io :1.3~30A h : ' • - T .o V ,c r GM/SG R ating/ Characteristics Absolute Maximum Ratings V rsm V V rm (V) lo (A) 500 200 400 800 1000 600 800 1200 1000
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EU02A
10days
2nd10days
SFPB-64
GM3Z
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CTL22S
Abstract: CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR
Text: SANKEN ELECTRIC U S A 11E D I ? ? 4 1 IVrm : 100— 200V Ultra Fast Recovery Diodes 00001*43 2 I H lo : 5 — 20 A CTL | V rm V lo (A) Tstg CC) Tj CC) Ifsm (A) With 60HzHaNSineWave 100 100 200 200 100 100 200 200 100 100 200 200 Ir (mA) Vf (V) trr Irm
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CTL-11S
CTL-12S
CTL-21S
CTL-22S
CTL-31S
CTL-32S
CTB-33
CTB-34.
MI-10/15
SFPB-64
CTL22S
CTB34
ctb-34
CTU-G3DR
CTU1S
CTUG3DR
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