VBUS05L1-DD1-G-08
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VBUS05L1-DD1-G-08
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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Original
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PDF
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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marking DIODE 2U 04
Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Text: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.
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DTDG23YP
500/50mA)
marking DIODE 2U 04
DTDG23YP
T100
marking 2U diode
II1001
Diode marking CODE 5M
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Din 43714
Abstract: 9786 Thermocouple Type g marking VB DIODE
Text: selos selos Diode block * selos The diode terminal consists of an insulating housing with snap-on end section. It has four screw terminals with four marking points. Solder tabs inside the screw terminals are available to connect diodes or other components.
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10/Pt
Din 43714
9786
Thermocouple Type g
marking VB DIODE
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marking code L17 diode
Abstract: marking l17 transistors l17 DTA144E EML17 RB520G-30 5M MARKING CODE SCHOTTKY DIODE mark l17
Text: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)
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EML17
DTA144E
RB520G-30
marking code L17 diode
marking l17
transistors l17
EML17
5M MARKING CODE SCHOTTKY DIODE
mark l17
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Untitled
Abstract: No abstract text available
Text: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)
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EML17
DTA144E
RB520G-30
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Untitled
Abstract: No abstract text available
Text: EML17 Transistors General purpose transistor isolated transistor and diode EML17 DTA144E and a RB520G-30 are housed independently in a EMT package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EML17 1.6 0.5 1.0 0.5 0.5 (5) (4)
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EML17
DTA144E
RB520G-30
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RB521S-30
Abstract: DTC123J EML20 Rohm diode 2U
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
EML20
Rohm diode 2U
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Untitled
Abstract: No abstract text available
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. External dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
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DTC123J
Abstract: EML20 RB521S-30
Text: EML20 Transistors General purpose transistor isolated transistor and diode EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4)
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EML20
DTC123J
RB521S-30
EML20
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Untitled
Abstract: No abstract text available
Text: SDP411D Semiconductor Band switching Diode PIN Connection Features • Extremely small size package: 1.7x1.25×0.9 Typ. • VHF tuner band switch applications. • Very Low series resistance : rS = Typ 0.5 @IF=2mA • Low total capacitance : CT = 1.2pF Max.
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SDP411D
OD-323
KSD-D6C006-001
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5mm rgb led
Abstract: rgb led 5mm LiYY
Text: Optoelectronic FloodLED CC LED-built-in PCB lighting modules with preassigned colour cycle The round FloodLED lighting modules are equipped with diodes in wired 5 mm LED technology that were specially selected for this purpose. They are spotlights with directed
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D-47475
5mm rgb led
rgb led 5mm
LiYY
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2SK3018
Abstract: No abstract text available
Text: 2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits.
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2SK3018W
OT-323
SC-70)
30-Oct-09
OT-323
2SK3018
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H11D1M
Abstract: 4N38M H11D1SM H11D2M H11D3M MOC8204M H11D1SR2VM
Text: H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers tm Features General Description • High voltage: The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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H11D1M,
H11D2M,
H11D3M,
4N38M,
MOC8204M
H11DXM,
4N38M
MOC8204M
MOC8204M,
H11D1M
H11D1SM
H11D2M
H11D3M
H11D1SR2VM
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smd transistor 2l
Abstract: 2L smd transistor smd 2l 2L SOT-23 BAT754 2L smd datasheet 2N DIODE smd transistor marking 2K BAT754A BAT754C
Text: Diodes SMD Type Schottky barrier double diodes BAT754 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Guard ring protected 0.55 Ultra high switching speed 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Small plastic SMD package
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BAT754
OT-23
BAT754
BAT754A
BAT754C
BAT754S
smd transistor 2l
2L smd transistor
smd 2l
2L SOT-23
2L smd datasheet
2N DIODE
smd transistor marking 2K
BAT754A
BAT754C
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H11GX
Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon
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H11G1M,
H11G2M,
H11G3M
H11GXM
H11G1M
H11G2M
E90700,
H11GX
H11G1M
H11G1SM
H11G1SR2M
H11G1TM
H11G1VM
H11G2M
H11G3M
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DR marking
Abstract: 2SD1866 2SD2143 2SD2212 T100
Text: 2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Unit : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base.
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2SD2212
2SD2143
2SD1866
2SD2212
SC-62
DR marking
2SD1866
T100
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diode N 4007
Abstract: Z7 DIODE n 4007 marking VB DIODE 9006 din 4007 st z7
Text: Modular Terminal for Plug-in Diode with Universal Foot Wire Size CSA UL_ Approvals width/wire strip length 4 mm2 fine stranded 4 250V 20-10 AWG 6.3A 300V 22-10 AWG 10A width 6 mm wire strip length 9 mm U-foot 4 mm2 solid 6 fine stranded 4
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OCR Scan
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PDF
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2m170z
Abstract: 2M11Z 2M12Z 2M13Z 2M14Z
Text: TAIWAN SEMICONDUCTOR [ s Pb RoHS 2M6.8Z - 2M200Z 2.0 Watts Glass Passivated Junction Silicon Zener Diodes COMPLIANCE DO-15 Features .1 4 0 3 .6 1 .0 (2 5 .4 ) MIN. .1 0 4 (2 .6 ) DIA, Plastic package has Underwriters Laboratory Flammability Classification
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OCR Scan
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PDF
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2M200Z
DO-15
MIL-STD-750,
2M200Z)
2m170z
2M11Z
2M12Z
2M13Z
2M14Z
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diode SMD MARKING CODE JV
Abstract: smd diode marking code SM smd marking KH
Text: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL20U Package I M1F 200V 1.1 A -fty -K v -? ÇWi— Cathode mai' Feature • /JvPSMD U n it-m m W eight 0 .0 2 7 g T y p £ |L 6 W • Small SMD • ß y -rx • Low Noise • trr=35ns • trr=35ns
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OCR Scan
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PDF
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M1FL20U
20jUm
diode SMD MARKING CODE JV
smd diode marking code SM
smd marking KH
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RJP 30 h1
Abstract: marking code YS SMD SMD XM M1FL20U MARKING CODE SMD IC smd marking HK M1FL20 diode SMD MARKING CODE JV SMD MARKING CODE l6n
Text: Super Fast Recovery Diode single Diode mnm o u t lin e Package ! M1F M 1 FL2 0 U Unit I mm Weight 0.027k Typ 200V 1.1 A ij'/ —K t— ? Cathode m ark (D Feature • /J ^ S M D • Sm all SM D • i& y 'f X • trr=35ns • Low Noise • trr=35ns |L 6 N
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OCR Scan
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PDF
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M1FL20U
027jiiTyp)
20/xm
I-111,
J532-1)
RJP 30 h1
marking code YS SMD
SMD XM
M1FL20U
MARKING CODE SMD IC
smd marking HK
M1FL20
diode SMD MARKING CODE JV
SMD MARKING CODE l6n
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Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
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OCR Scan
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PDF
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OT-23
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BSS63
BSS64
Diodes Marking K6
BCX17
Diodes Marking K7
MARKING U1
marking A06
MARKING C4
Marking H2
S4 2A
S5 MARKING
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Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B
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OCR Scan
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PDF
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
Diodes Marking K7
Diodes Marking K6
sot23 marking m8
transistors marking 1p
BSS69
marking 1p sot23
Marking b4 SOT23
MARKING l7
MARKING K4
marking H6 sot 23
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