smd code marking ft sot23
Abstract: smd code marking sot23 data sheet for all smd components MARKING SMD IC CODE 2PB710ARL 2PB710ASL 2PD602ARL 2PD602ASL
Text: 2PB710ARL; 2PB710ASL 50 V, 500 mA PNP general-purpose transistors Rev. 01 — 29 October 2008 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.
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2PB710ARL;
2PB710ASL
O-236AB)
2PB710ARL
O-236AB
2PD602ARL
2PD602ASL
2PB710ARL/DG
smd code marking ft sot23
smd code marking sot23
data sheet for all smd components
MARKING SMD IC CODE
2PB710ARL
2PB710ASL
2PD602ARL
2PD602ASL
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marking code SS SOT23
Abstract: smd code marking sot23 SL 100 NPN Transistor equivalent of SL 100 NPN Transistor transistor marking DG marking codes SOT23 SS MARKING SMD IC CODE smd code marking ft sot23 SMD MARKING CODE transistor 2PB709ARL
Text: 2PB709ARL; 2PB709ASL 45 V, 100 mA PNP general-purpose transistors Rev. 01 — 12 November 2008 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.
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2PB709ARL;
2PB709ASL
O-236AB)
2PB709ARL
O-236AB
2PD601ARL
2PD601ASL
2PB709ARL/DG
marking code SS SOT23
smd code marking sot23
SL 100 NPN Transistor
equivalent of SL 100 NPN Transistor
transistor marking DG
marking codes SOT23 SS
MARKING SMD IC CODE
smd code marking ft sot23
SMD MARKING CODE transistor
2PB709ARL
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SMD TRANSISTOR MARKING w7
Abstract: No abstract text available
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
771-PBHV9115T215
SMD TRANSISTOR MARKING w7
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MARKING CODE SMD IC
Abstract: PMBTA45 PBHV9050T smd transistor LL sot23
Text: PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat BISS transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9050T
O-236AB)
PMBTA45.
AEC-Q101
PBHV9050T
MARKING CODE SMD IC
PMBTA45
smd transistor LL sot23
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SMD TRANSISTOR MARKING w7
Abstract: PBHV8115T PBHV9115T MARKING CODE SMD IC
Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9115T
O-236AB)
PBHV8115T.
AEC-Q101
PBHV9115T
SMD TRANSISTOR MARKING w7
PBHV8115T
MARKING CODE SMD IC
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PBHV8540T
Abstract: PBHV9040T MARKING CODE SMD IC
Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV9040T
O-236AB)
PBHV8540T.
AEC-Q101
PBHV9040T
PBHV8540T
MARKING CODE SMD IC
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NXP SMD TRANSISTOR MARKING CODE
Abstract: data sheet for all smd components data sheet transistor PNP TRANSISTOR SMD MARKING CODES BC807 PDTB123TK PDTB123TS PDTB123TT PDTD123TT
Text: PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 4 — 8 November 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123TT
O-236AB)
PDTD123TT.
AEC-Q101
BC807
NXP SMD TRANSISTOR MARKING CODE
data sheet for all smd components
data sheet transistor PNP
TRANSISTOR SMD MARKING CODES
PDTB123TK
PDTB123TS
PDTB123TT
PDTD123TT
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Untitled
Abstract: No abstract text available
Text: PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 4 — 8 November 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123TT
O-236AB)
PDTD123TT.
AEC-Q101
BC807
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PBSS5140T
Abstract: TRANSISTOR SMD MARKING CODES PBSS4140T NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS5140T
O-236AB)
PBSS4140T.
PBSS5140T
TRANSISTOR SMD MARKING CODES
PBSS4140T
NXP TRANSISTOR SMD MARKING CODE SOT23
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PDTB123Y
Abstract: No abstract text available
Text: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123YT
O-236AB)
PDTD123YT.
AEC-Q101
BC807
PDTB123Y
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SMD TRANSISTOR MARKING 7w
Abstract: NXP SMD TRANSISTOR MARKING CODE PDTB113ZT PDTD113ZT BC807 PDTB113Z PDTB113ZK PDTB113ZS
Text: PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 3 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB113ZT
O-236AB)
PDTD113ZT.
AEC-Q101
BC807
SMD TRANSISTOR MARKING 7w
NXP SMD TRANSISTOR MARKING CODE
PDTB113ZT
PDTD113ZT
PDTB113Z
PDTB113ZK
PDTB113ZS
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PDTB123ET
Abstract: BC807 PDTB123E PDTB123EK PDTB123ES PDTD123ET
Text: PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123ET
O-236AB)
PDTD123ET.
AEC-Q101
BC807
PDTB123ET
PDTB123E
PDTB123EK
PDTB123ES
PDTD123ET
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BC807
Abstract: PDTB123Y PDTB123YK PDTB123YS PDTB123YT PDTD123YT
Text: PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123YT
O-236AB)
PDTD123YT.
AEC-Q101
BC807
PDTB123Y
PDTB123YK
PDTB123YS
PDTB123YT
PDTD123YT
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PDTB113E
Abstract: No abstract text available
Text: PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 3 — 14 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB113ET
O-236AB)
PDTD113ET.
AEC-Q101
BC807
PDTB113E
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smd code marking HD SOT23
Abstract: No abstract text available
Text: SO T2 3 PBSS5130T 30 V; 1 A PNP low VCEsat BISS transistor 9 July 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
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PBSS5130T
AEC-Q101
smd code marking HD SOT23
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Untitled
Abstract: No abstract text available
Text: PBSS4041PT 60 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4041PT
O-236AB)
PBSS4041NT.
AEC-Q101
PBSS4041PT
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BC807
Abstract: PDTB113EK PDTB113ES PDTB113ET PDTD113ET PDTB113E
Text: PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 3 — 14 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB113ET
O-236AB)
PDTD113ET.
AEC-Q101
BC807
PDTB113EK
PDTB113ES
PDTB113ET
PDTD113ET
PDTB113E
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PDTB123E
Abstract: PDTB123ET
Text: PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123ET
O-236AB)
PDTD123ET.
AEC-Q101
BC807
PDTB123E
PDTB123ET
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Untitled
Abstract: No abstract text available
Text: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032PT
O-236AB)
PBSS4032NT.
AEC-Q101
PBSS4032PT
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transistor BJ 102 131
Abstract: No abstract text available
Text: PBSS4021PT 20 V, 3.5 A PNP low VCEsat BISS transistor Rev. 01 — 29 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4021PT
O-236AB)
PBSS4021NT.
AEC-Q101
PBSS4021PT
transistor BJ 102 131
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transistor BJ 102 131
Abstract: transistor smd marking BJ PBSS4021PT 250 B 340 smd Transistor PBSS4021NT smd transistor bj transistor smd marking BJ pnp
Text: PBSS4021PT 20 V, 3.5 A PNP low VCEsat BISS transistor Rev. 01 — 29 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4021PT
O-236AB)
PBSS4021NT.
AEC-Q101
PBSS4021PT
transistor BJ 102 131
transistor smd marking BJ
250 B 340 smd Transistor
PBSS4021NT
smd transistor bj
transistor smd marking BJ pnp
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Untitled
Abstract: No abstract text available
Text: 2PB709BRL; 2PB709BSL 50 V, 200 mA PNP general-purpose transistors Rev. 1 — 28 June 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.
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2PB709BRL;
2PB709BSL
O-236AB)
2PB709BRL
O-236AB
2PD601BRL
2PD601BSL
AEC-Q101
2PB709BRL
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PBSS4032PT
Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032PT
O-236AB)
PBSS4032NT.
AEC-Q101
PBSS4032PT
NXP TRANSISTOR SMD MARKING CODE SOT23
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Untitled
Abstract: No abstract text available
Text: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032PT
O-236AB)
PBSS4032NT.
AEC-Q101
PBSS4032PT
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