Si5902DC
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
S-62424--Rev.
04-Oct-99
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Si1900DL
Abstract: Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
18-Jul-08
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sot-363 marking 3C
Abstract: lf 10193
Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code
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OCR Scan
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OT-363
SC-70
S-02367--
23-Oct-OO
sot-363 marking 3C
lf 10193
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Si5902DC
Abstract: Si5902DC-T1 marking code ca
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Si5902DC
Si5902DC-T1
S-21251--Rev.
05-Aug-02
marking code ca
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Si1900DL
Abstract: No abstract text available
Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability
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Si1900DL
OT-363
SC-70
S-02367--Rev.
23-Oct-00
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PDF
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marking code PB
Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Original
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
S-51614--Rev.
05-Sep-05
marking code PB
SI1900DL-T1-E3
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Untitled
Abstract: No abstract text available
Text: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability
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Si1900DL
OT-363
SC-70
S-01458--Rev.
10-Jul-00
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Si1900DL
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code
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Original
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Si1900DL
OT-363
SC-70
S-21374--Rev.
12-Aug-02
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Untitled
Abstract: No abstract text available
Text: Si5902DC New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 D1 1206-8 ChipFET D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Original
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Si5902DC
S-62424--Rev.
04-Oct-99
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Si1900DL
Abstract: Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
08-Apr-05
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PDF
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Si5902DC
Abstract: Si5902DC-T1
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Original
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Si5902DC
Si5902DC-T1
18-Jul-08
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vishay MOSFET code marking
Abstract: No abstract text available
Text: Si5902DC Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V 3.9 0.143 @ VGS = 4.5 V 3.0 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CA XX Lot Traceability and Date Code
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Original
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Si5902DC
Si5902DC-T1
08-Apr-05
vishay MOSFET code marking
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Untitled
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
S-51075--Rev.
13-Jun-05
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Untitled
Abstract: No abstract text available
Text: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,
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CWDM305P
CWDM305PD
CWDM305ND
CWDM305ND
CWDM305P
CWDM305PD
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PB CWDM305P
Abstract: CWDM305P marking code 8 lead soic package CWDM305N
Text: Product Brief CWDM305N Single, 5.8A N-Channel CWDM305P (Single, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) CWDM305PD (Dual, 5.3A P-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305N, CWDM305P, CWDM305ND,
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CWDM305N
CWDM305P
CWDM305ND
CWDM305PD
CWDM305N,
CWDM305P,
CWDM305ND,
CWDM305PD
C305N
C503P
PB CWDM305P
CWDM305P
marking code 8 lead soic package
CWDM305N
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STP4803
Abstract: STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8
Text: STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP4803
STP4803
-30V/-5
-30V/-4
STP48
MOSFET 30v sop-8
marking 52A
MOSFET dual SOP-8
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Mosfet
Abstract: SSF2418E 2418E
Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF2418E
18mohm
OT23-6
2418E
Mosfet
SSF2418E
2418E
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Untitled
Abstract: No abstract text available
Text: Dual N-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package x 2.9 A, 30 V RDS ON = 123 m: @ VGS = 4.5 V solution for dual switching requirements in cellular RDS(ON) = 140 m: @ VGS = 3.0 V handset
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FDMA2002NZ
FDMA2002NZ
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channel mosfet sop_8
Abstract: stp4953 MOSFET dual SOP-8 Dual p-Channel MOSFET SOP8 P channel MOSFET 50A Stanson Technology 30v p channel mosfet dual mosfet "marking code 30" Marking 52a SOP8 Package
Text: STP4953 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4953 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP4953
STP4953
-30V/-5
-30V/-4
-30V/-3
channel mosfet sop_8
MOSFET dual SOP-8
Dual p-Channel MOSFET SOP8
P channel MOSFET 50A
Stanson Technology
30v p channel mosfet
dual mosfet "marking code 30"
Marking 52a
SOP8 Package
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Mosfet
Abstract: SSF3626
Text: SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A
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SSF3626
SSF3626
330mm
Mosfet
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor Power TMOS¨ MOSFETs and Diodes Power TMOS¨ MOSFETs Continued TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 Ñ N-Channel TMOS V ÑTO-220AB Mfr.Õs Type4 V(BR)DSS (V) Min. RDS(on) (½) Max. 1000 800 600 500 500 400 400 250 200
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O-247
O-247
O-220AB
MTW10N100E
MTP3055V
MTW7N80E
MTP15N06V
MTW8N60E
MTP36N06V
MTW14N50E
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marking 30 dual mosfet
Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561 SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPN6561
SPN6561
marking 30 dual mosfet
dual mosfet "marking code 30"
sot 26 Dual N-Channel MOSFET
SPN6561S26RG
5V GATE TO SOURCE VOLTAGE MOSFET
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Mosfet
Abstract: SSF2616E
Text: SSF2616E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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SSF2616E
SSF2616E
SSF261e
Mosfet
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Mosfet
Abstract: SSF4953
Text: SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
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SSF4953
SSF4953
Mosfet
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