marking code 6C8
Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
marking code 6C8
zener 5A1
zener 10D
zener 5c1
zener 9c1
DIODES 33D
Marking 4c7
4C7 marking code
zener 4c3
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PDF
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zener 4c3
Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
RB500V-40
zener 4c3
zener 5c1
ZENER CODE 51b
zener 2a7
4C7 marking code
zener 10D
zener 4B7
20D22A
DIODES 33D
marking code 6C8
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PDF
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zener 4c3
Abstract: zener gdz zener gdz marking
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
zener 4c3
zener gdz
zener gdz marking
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PDF
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zener 6c2
Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
2012-REV
RB500V-40
zener 6c2
zener 4c3
zener 5c1
marking code 6C8
zener 9A1
zener 9c1
zener 5B6
DIODES 33D
6c2 zener
4C3 zener
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PDF
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BDX33C
Abstract: No abstract text available
Text: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc
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BDX33B,
BDX33C
BDX34B,
BDX34C
BDX334B
BDX33C,
BDX334C
33C/34B,
BDX33C
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PDF
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BDX33CG
Abstract: BDX33BG BDX334 BDX33C Box 34C BDX334B BDX34CG BDX33B BDX34B BDX34C
Text: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features •ăHigh DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
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BDX33B,
BDX33C*
BDX34B,
BDX34C*
BDX33C
BDX34C
BDX334B
BDX33C,
BDX334C
BDX33CG
BDX33BG
BDX334
Box 34C
BDX334B
BDX34CG
BDX33B
BDX34B
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PDF
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Untitled
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2011/65/EU
MIL-STD-750,
2011-REV
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PDF
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33c marking
Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
Text: BDX33B, BDX33C NPN BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc
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BDX33B,
BDX33C
BDX34B,
BDX34C
BDX334B
BDX33C,
BDX334C
33C/34B,
33c marking
BDX33BG
box 34b
BDX334B
BDX33CG
BDX334
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PDF
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BDX34C
Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
Text: BDX33B, BDX33C* NPN BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
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BDX33B,
BDX33C*
BDX34B,
BDX34C*
BDX33C
BDX34C
BDX334B
BDX33C,
BDX334C
10 amp pnp darlington power transistors
BDX33CG
BDX34CG
BDX33B
BDX34B
marking 33c diode
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PDF
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA
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Original
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdz marking
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PDF
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zener gdz
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2013-REV
zener gdz
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PDF
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6b2 zener
Abstract: Marking 4c7 Tube 5A6 DIODES 33D
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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Original
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
6b2 zener
Marking 4c7
Tube 5A6
DIODES 33D
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PDF
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diode 6v8a
Abstract: 39ca diode 6V8C diode 33CA 6v8ca 8v2a 33ca marking 12CA on 6v8a 62ca
Text: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors P6SMBJ Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus and other integrated circuits.
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160CA
170CA
180CA
200CA
220CA
220CA
diode 6v8a
39ca
diode 6V8C
diode 33CA
6v8ca
8v2a
33ca
marking 12CA
on 6v8a
62ca
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PDF
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diode 6v8a
Abstract: diode 33CA 012 6V8A diode 6V8C 6V8C 6v8ca 737 39A diode 39CA 6v8a 15CA
Text: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Suppressors P6SMBJ Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus and other integrated circuits.
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200CA
220CA
diode 6v8a
diode 33CA
012 6V8A
diode 6V8C
6V8C
6v8ca
737 39A diode
39CA
6v8a
15CA
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PDF
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zener 6c2
Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener
Text: GLZ2.0 A (B)(D) THRU GLZ56(A)(B)(C) SURFACE MOUNT ZENER DIODES MINI-MELF SOD-80/DO-213AA Planar Die construction 500mV Power Dissipationie construction Ieally Sulted for Automated Assembly Processes 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.055(1.40) 0.020(0.50)
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GLZ56
OD-80/DO-213AA
500mV
MIL-STD-202E
zener 6c2
zener 4c3
zener 5c1
zener 5A6
zener 5A1
zener 2a7
zener 9A1
4C3 zener
4C7 marking code
5a6 zener
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PDF
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zener 6c2
Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Text: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant
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BZX84C-BS
OT-23
OT-23
MIL-STD-202E
zener 6c2
sot-23 Marking 8C2
6c2 diode
5B1 zener diode sot-23
Diode SOT-23 marking 27C
5c1 zener diode
SOT23 MARKING 5b1
27BSB
5B1 IR
BZX84C
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PDF
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E230531
Abstract: Transient Voltage Suppression Diodes
Text: Transient Voltage Suppression Diodes Surface Mount – 400W > P4SMA series P4SMA Series Description
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E230531
E230531
Transient Voltage Suppression Diodes
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PDF
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15005B
Abstract: zener gdz marking
Text: WILLAS SCS501V VOLTAGE 40V 0.1AMP Schottky Barrier DATA SHEET GDZ2.0~GDZ56 Pb Free Product FEATURES SOD-323 SC-76 AXIAL LEAD ZENER DIODES * Extremely Low VF500 POWER .012 Unit: inch (mm) DO-35 mWatts 1. 0 2( 26 . 0) MIN. • Ideally Suited for Automated Assembly Processes
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GDZ56
DO-35
OD-323
SC-76)
VF500
500mW
15005B
zener gdz marking
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV15CJ6V8-G Thru. TV15CJ601-G Breakdown Voltage: 6.8 to 600 Volts Peak Pulse Power : 1500Watts RoHS Device Features -Glass passivated chip. -1500W peak pulse power capability with a 10/1000 S waveform, repetitive rate
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TV15CJ6V8-G
TV15CJ601-G
1500Watts
-1500W
SMC/DO-214AB
DO-214AB
QW-BTV17
DO-214AB
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PDF
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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GDZ56
DO-35
500mW
MIL-STD-202,
DO-35
zener gdz marking
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PDF
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TVP06B15A
Abstract: No abstract text available
Text: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TVP06B6V8-G Thru. TVP06B601-G Breakdown Voltage: 6.8 ~ 600Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Glass passivated chip. -Low leakage. -Uni and Bidirectional unit.
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TVP06B6V8-G
TVP06B601-G
600Volts
SMB/DO-214AA
MIL-STD-750,
QW-BTV18
DO-214AA
TVP06B15A
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PDF
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Untitled
Abstract: No abstract text available
Text: GLZ2.0~GLZ56 PB FREE PRODUCT SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) MECHANICAL DATA • Case: Molded Glass MINI-MELF .020(0.5)
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GLZ56
MINI-MELF/LL-34
500mW
MIL-STD-202E,
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PDF
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39A zener diode
Abstract: diode zener 33c diode zener 22c GLZ56 minimelf 15A
Text: GLZ2.0 ~ GLZ56 500mW SUFACE MOUNT ZENER DIODE FEATURES • Planar Die construction MINI-MELF / LL-34 • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb
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GLZ56
500mW
LL-34
MIL-STD-750,
39A zener diode
diode zener 33c
diode zener 22c
GLZ56
minimelf 15A
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PDF
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30g 122 igbt
Abstract: SEMIKRON type designation PCIM 176 display CALCULATION SemiSel 3.1 PCIM 176 pure sinus inverter circuit 60749 IGBT cross reference semikron CALCULATION SemiSel PCIM 95
Text: SEMiX - Technical Explanations SEMiX ® IGBT Modules & Bridge Rectifier Family Technical Explanations Version 2.0 / January 2008 Christian Daucher 1 Version 2.0 2008-01-22 by SEMIKRON SEMiX® - Technical Explanations Content 1 Introduction . 3
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