Untitled
Abstract: No abstract text available
Text: S EM ICOND UCTOR 500 mW Surface Mount LL-34 Hermetically Sealed Glass Small Signal Schottky Diode SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted DEVICE MARKING DIAGRAM Value Parameter Units LL60
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LL-34
LL60P
DB-100
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do213AC
Abstract: MELF DIODE color bands melf diode marking MINI-MELF DIODE BLACK CATHODE MINI-MELF DIODE marking 3 DO-213AC LL60P MELF Package Schottky MELF Package DB148
Text: SEM IC O N DU C TO R 500 mW Surface Mount LL-34 Hermetically Sealed Glass Small Signal Schottky Diode SURFACE MOUNT LL34 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted DEVICE MARKING DIAGRAM Value Parameter Units
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LL-34
LL60P
DB-100
do213AC
MELF DIODE color bands
melf diode marking
MINI-MELF DIODE BLACK CATHODE
MINI-MELF DIODE marking 3
DO-213AC
LL60P
MELF Package
Schottky MELF Package
DB148
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DIODE MARKING CODE A1
Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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HSMS-286F
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
DIODE MARKING CODE A1
RFID 5.8Ghz
HSMS286F
marking code e1 DIODE
286E
HSMS-286K
package marking
AVAGO DATE CODE MARKING
sc70-3 PCB PAD
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surface mount limiter diodes
Abstract: marking 34 sot-363 rf HSMS-286F HSMS-286K HSMS-286P 286E HSMS-286B date code A DIODE MARKING CODE T4 marking code tc sot 363 MARKING T2 SOT323
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286P HSMS-286P High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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HSMS-286P
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
surface mount limiter diodes
marking 34 sot-363 rf
HSMS-286K
HSMS-286P
286E
HSMS-286B date code A
DIODE MARKING CODE T4
marking code tc sot 363
MARKING T2 SOT323
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marking 34 sot-363 rf
Abstract: HSMS-286x Series Detector Schottky Diodes at 915MHZ sot-23 MARKING CODE ZZ AVAGO DATE CODE MARKING sot 23 marking code T2 SOT 363 marking CODE T4 T4 marking sot-323 286E HSMS-2865
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2865 HSMS-2865 High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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Original
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HSMS-2865
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
marking 34 sot-363 rf
HSMS-286x Series
Detector Schottky Diodes at 915MHZ
sot-23 MARKING CODE ZZ
AVAGO DATE CODE MARKING
sot 23 marking code T2
SOT 363 marking CODE T4
T4 marking sot-323
286E
HSMS-2865
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smd schottky diode 82
Abstract: smd diode S7 smd diode schottky code marking 63 1PS76SB17 sod323 diode marking code 74 6F SMD DIODE SMD CODE MARKING s7 marking 5BX smd diode schottky code marking 29 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D049 1PS76SB17 Schottky barrier diode Preliminary specification Supersedes data of 1996 Oct 14 1999 May 25 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 FEATURES DESCRIPTION
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M3D049
1PS76SB17
OD323
MAM283
OD323)
115002/02/pp8
smd schottky diode 82
smd diode S7
smd diode schottky code marking 63
1PS76SB17
sod323 diode marking code 74
6F SMD
DIODE SMD CODE MARKING s7
marking 5BX
smd diode schottky code marking 29
BP317
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smd schottky diode marking 72
Abstract: st smd diode marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB40 Schottky barrier diode Product specification Supersedes data of 1999 Mar 08 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES DESCRIPTION • Low forward voltage
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M3D319
1PS79SB40
SC-79
OD523)
MAM403
SCA63
115002/00/02/pp8
smd schottky diode marking 72
st smd diode marking code
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Untitled
Abstract: No abstract text available
Text: BAT165. Silicon Schottky Diode • Medium current Schottky rectifier diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Miniature plastic package for surface mounting SMD BAT165 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT165.
BAT165
OD323
50/60Hz,
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LT 1000-T1
Abstract: marking 34 diode SCHOTTKY MOSFET TSSOP-8 Si6923DQ
Text: Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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Si6923DQ
LT 1000-T1
marking 34 diode SCHOTTKY
MOSFET TSSOP-8
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1PS76SB21
Abstract: "MARKING CODE S1" smd schottky diode marking 72 sod323 diode marking code 74
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D049 1PS76SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 FEATURES DESCRIPTION • Ultra fast switching speed
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M3D049
1PS76SB21
OD323
MAM283
OD323)
115002/00/02/pp8
1PS76SB21
"MARKING CODE S1"
smd schottky diode marking 72
sod323 diode marking code 74
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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smd schottky diode marking 72
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
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M3D049
1PS76SB70
OD323
MAM283
OD323)
SCA60
115104/00/01/pp8
smd schottky diode marking 72
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB70 Schottky barrier diode Product specification File under Discrete Semiconductors 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB70 FEATURES DESCRIPTION • Low forward voltage
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M3D319
1PS79SB70
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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smd schottky diode marking s4
Abstract: smd schottky diode s4 33 smd schottky diode s4 48 S4 DIODE schottky smd schottky diode s4 S4 69 DIODE schottky S4 44 DIODE schottky "MARKING CODE S4" smd schottky diode marking 72 smd schottky diode s4 21
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB40 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES DESCRIPTION • Low forward voltage
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M3D049
1PS76SB40
OD323
MAM283
OD323)
SCA63
115002/00/02/pp8
smd schottky diode marking s4
smd schottky diode s4 33
smd schottky diode s4 48
S4 DIODE schottky
smd schottky diode s4
S4 69 DIODE schottky
S4 44 DIODE schottky
"MARKING CODE S4"
smd schottky diode marking 72
smd schottky diode s4 21
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marking AF
Abstract: BAR63-03W BAT165
Text: BAT165. Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BAT165.
BAT165
OD323
marking AF
BAR63-03W
BAT165
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Untitled
Abstract: No abstract text available
Text: BAT165. Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BAT165.
BAT165
OD323
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marking AF
Abstract: BAR63-03W BAT165
Text: BAT165. Medium Power AF Schottky Diode • Forward current: 750 mA Reverse voltage: 40 V • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications BAT165 1 2 ESD Electrostatic discharge sensitive device, observe handling precaution!
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BAT165.
BAT165
OD323
marking AF
BAR63-03W
BAT165
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MBK573
Abstract: AT120A BAT120 BAT120A BAT120C BAT120S
Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT120 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1998 Jan 21 Philips Semiconductors Product specification Schottky barrier double diodes BAT120 series
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M3D087
BAT120
BAT120
MGL171
BAT120A
SCA57
117027/1200/01/pp8
MBK573
AT120A
BAT120C
BAT120S
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smd schottky diode 82
Abstract: BAS40 BAS40-04W BAS40-05W BAS40-06W BAS40W
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 BAS40W series Schottky barrier double diodes Product specification Supersedes data of 1997 Oct 28 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40W series
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M3D102
BAS40W
BAS40
MLC358
BAS40-04W
SCA63
115002/00/03/pp8
smd schottky diode 82
BAS40
BAS40-05W
BAS40-06W
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smd schottky diode 82
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D102 1PS70SB40 series Schottky barrier double diodes Product specification Supersedes data of 1997 Oct 28 1999 Apr 26 Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS70SB40 series
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M3D102
1PS70SB40
1PS70SB.
MLC358
1PS70SB44
SCA63
115002/00/03/pp8
smd schottky diode 82
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Untitled
Abstract: No abstract text available
Text: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDW6923
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FDW6923
Abstract: No abstract text available
Text: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDW6923
FDW6923
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RB721Q-40
Abstract: RB721Q
Text: RB721Q-40 Diode, Schottky barrier, leaded These glass mold-type diodes are suitable for lead mounting on printed circuit boards. Dimensions Units : mm CATHODE. é Features _ f • available in DO-34 package - - c • part marking, see following table
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RB721Q-40
DO-34
RB721Q-40
RB721Q
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RB441Q
Abstract: No abstract text available
Text: Diode, Schottky barrier, leaded RB441Q-40 Dimensions Units : mm These glass mold-type diodes are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 .4 ± 0 . Features • ) available in DO-34 package » A c • part marking, see following table
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RB441Q-40
DO-34
RB441Q-40
RB441Q
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