MARKING 4a
Abstract: BC859 .a h marking marking 4a sot23
Text: SEMICONDUCTOR BC859 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 4A 1 2 Item Marking Description Device Mark 4 BC859 hFE Grade A A, B * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC859
OT-23
MARKING 4a
BC859
.a h marking
marking 4a sot23
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BC859 smd
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E
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OT-23
BC859
BC860
BC859A
BC859B
BC859C
BC860A
BC860B
BC859 smd
BC859A
BC859B
BC859C
BC860
BC860A
BC860B
BC860C
BC859
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BC859
Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F
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ISO/TS16949
OT-23
BC859
BC860
BC859A
BC859B
BC859C
BC860A
BC859
BC859A
BC859B
BC859C
BC860
BC860A
BC860B
BC860C
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IC 7495 pin configuration
Abstract: ic 7495 ZXTN25040DFH 50mmx50mm ZXTP25040DFH
Text: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A
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ZXTN25040DFH
ZXTP25040DFH
AEC-Q101
DS33697
IC 7495 pin configuration
ic 7495
ZXTN25040DFH
50mmx50mm
ZXTP25040DFH
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OUTLINE DIMENSIONS in inche
Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to
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ZXTP2027F
-100V,
ZXTN2018F
OUTLINE DIMENSIONS in inche
marking 951
12W MARKING sot23
ZXTN2018F
ZXTP2027F
ZXTP2027FTA
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marking 12W SOT23
Abstract: ZXTN2020F ZXTN2020FTA ZXTP2029F plc lamp 12W MARKING sot23
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
marking 12W SOT23
ZXTN2020F
ZXTN2020FTA
ZXTP2029F
plc lamp
12W MARKING sot23
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marking 12W SOT23
Abstract: 12W MARKING sot23 IB100mA Marking 853
Text: ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V BR CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to
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ZXTN2020F
ZXTP2029F
ZXTN2020FTA
522-ZXTN2020FTA
ZXTN2020FTA
marking 12W SOT23
12W MARKING sot23
IB100mA
Marking 853
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ZXTN25015DFH
Abstract: ZXTP25015DFH ZXTP25015DFHTA
Text: ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC cont = -4A RCE(sat) = 33m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to
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ZXTP25015DFH
-55mV
ZXTN25015DFH
ZXTN25015DFH
ZXTP25015DFH
ZXTP25015DFHTA
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ZXTN25020BFH
Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
Text: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to
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ZXTP25020BFH
-60mV
ZXTN25020BFH
ZXTN25020BFH
ZXTP25020BFH
ZXTP25020BFHTA
RBC-10K
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CM12A
Abstract: br 2222 npn ZX5T651F
Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS
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ZX5T651F
ZX5T651FTA
CM12A
br 2222 npn
ZX5T651F
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STT4NF30L
Abstract: No abstract text available
Text: STT4NF30L N-CHANNEL 30V - 0.050 Ω - 4A SOT23-6L STripFET II POWER MOSFET • ■ ■ TYPE VDSS RDS on ID STT4NF30L 30 V < 0.065 Ω ( @ 10 V ) 4A TYPICAL RDS(on) = 0.050 Ω @ 10 V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of
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STT4NF30L
OT23-6L
STT4NF30L
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TS16949
Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to
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ZXTP2027F
-100V,
ZXTN2018F
D-81541
TS16949
ZXTN2018F
ZXTP2027F
ZXTP2027FTA
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TS16949
Abstract: ZXTN25012EFH ZXTP25012EFH ZXTP25012EFHTA
Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = 4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to
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ZXTP25012EFH
-65mV
ZXTN25012EFH
D-81541
TS16949
ZXTN25012EFH
ZXTP25012EFH
ZXTP25012EFHTA
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TS16949
Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Text: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications
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ZXTP07012EFF
OT23F,
-75mV
ZXTN07012EFF
OT23F
OT23F
D-81541
TS16949
ZXTN07012EFF
ZXTP07012EFF
ZXTP07012EFFTA
2V150
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TRANSISTOR MARKING 1d9
Abstract: ZXTP19060CFF TS16949 ZXTN19060CFF ZXTP19060CFFTA
Text: ZXTP19060CFF 60V, SOT23F, PNP medium power transistor Summary BVCEO > -60V BVECO > -7V IC cont = -4A VCE(sat) < 75mV @ 100mA RCE(sat) = 45m⍀ PD = 1.5 W Complementary part number ZXTN19060CFF Description C This medium voltage PNP transistor has been designed for applications
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ZXTP19060CFF
OT23F,
100mA
ZXTN19060CFF
OT23F
D-81541
TRANSISTOR MARKING 1d9
ZXTP19060CFF
TS16949
ZXTN19060CFF
ZXTP19060CFFTA
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ZXTP25020CFH
Abstract: TS16949 ZXTN25020CFH ZXTP25020CFHTA
Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to
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ZXTP25020CFH
-55mV
ZXTN25020CFH
D-81541
ZXTP25020CFH
TS16949
ZXTN25020CFH
ZXTP25020CFHTA
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ZETEX GATE DRIVER
Abstract: MARKING 1D4
Text: ZXTN07045EFF 45V, SOT23F, NPN high gain power transistor Summary BVCEO > 45V BVECO > 6V IC cont = 4A VCE(sat) < 80mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTP07040DFF Description C This low voltage NPN transistor has been designed for applications
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ZXTN07045EFF
OT23F,
ZXTP07040DFF
OT23F
and49)
621-ZXTN07045EFFTA
ZXTN07045EFFTA
ZETEX GATE DRIVER
MARKING 1D4
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STT5NF30L
Abstract: No abstract text available
Text: STT5NF30L N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET II POWER MOSFET TYPE VDSS RDS on ID STT5NF30L 30 V < 0.050 Ω (@ 10V) 4A TYPICAL RDS(on) = 0.039Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™”
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STT5NF30L
OT23-6L
STT5NF30L
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ST2300
Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
Text: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices
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ST2300
ST2300
OT-23
MOSFET N-Channel 1a vgs 0.9 sot-23
marking code 4A
MOSFET N SOT-23
N mosfet sot-23
ST2300SRG
n mosfet low vgs
marking 4a sot23
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Untitled
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
UL94V-0
D-74638
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ST2300
Abstract: MARKING CODE mosfet marking code 4A n channel power trench MOSFET
Text: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices
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ST2300
ST2300
OT-23-3L
MARKING CODE mosfet
marking code 4A
n channel power trench MOSFET
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8205 A mosfet
Abstract: 8205 mosfet
Text: Datasheet N-Channel Enhancement Mode Power MOSFET TDM8205 Description D1 D2 The TDM8205 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 2.5V. This device is suitable for use as a
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TDM8205
TDM8205
OT23-6L
8205 A mosfet
8205 mosfet
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A7 SMD TRANSISTOR
Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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KO3407
OT-23
A7 SMD TRANSISTOR
SMD a7 Transistor
smd transistor marking a7
smd TRANSISTOR sot-23 a7
smd transistor A7
KO3407
smd transistor A7 s 52
smd a7
smd transistor A7 sot 23
smd diode a7
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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