2N6603
Abstract: 2n6603 transistor 2N6603 JANTX marking code GNF 2n6604 jantxv 2N6604 2n6603 jan
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/522A 30 July 1999 SUPERSEDING MIL-S-19500/522 EL 21 August 1976 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY
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MIL-PRF-19500/522A
MIL-S-19500/522
2N6603
2N6604
MIL-PRF-19500.
2n6603 transistor
2N6603 JANTX
marking code GNF
2n6604 jantxv
2N6604
2n6603 jan
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TRANSISTOR SUBSTITUTION 1993
Abstract: 2N6301 JANTX 2N6300 2N6301 JANTX2N6300 MIL-PRF19500 CC 3053
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 September 1997 MIL-PRF-19500/539B 15 June 1997 SUPERSEDING MIL-S-19500/539A 20 October 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER
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MIL-PRF-19500/539B
MIL-S-19500/539A
2N6300,
2N6301
MIL-PRF-19500.
TRANSISTOR SUBSTITUTION 1993
2N6301 JANTX
2N6300
JANTX2N6300
MIL-PRF19500
CC 3053
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2N5685
Abstract: 2N5686 3041 v 464c
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 November 1997 MIL-PRF-19500/464C 5 August 1997 SUPERSEDING MIL-S-19500/464B 25 May 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER
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MIL-PRF-19500/464C
MIL-S-19500/464B
2N5685
2N5686,
MIL-PRF-19500.
2N5686
3041 v
464c
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equivalent transistor 2N1711
Abstract: 2N1711 2N1890 equivalent 2N1711S 2N1890 2N1890S transistor 2N1711 E11051 transistor TL 431 g
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 September 1999. INCH-POUND MIL-PRF-19500/225F 25 June 1999 SUPERSEDING MIL-S-19500/225E 15 April 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
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MIL-PRF-19500/225F
MIL-S-19500/225E
2N1711,
2N1711S,
2N1890,
2N1890S,
MIL-PRF-19500.
equivalent transistor 2N1711
2N1711
2N1890 equivalent
2N1711S
2N1890
2N1890S
transistor 2N1711
E11051
transistor TL 431 g
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transistor ignition circuit
Abstract: No abstract text available
Text: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BU323Z
OT-93/TO-218
O-220
BU323Z/D
transistor ignition circuit
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BU323ZG
Abstract: transistor marking 4D transistor ignition circuit WCLA ONSEMI 717 TRANSISTOR BU323Z
Text: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BU323Z
BU323Z
BU323Z/D
BU323ZG
transistor marking 4D
transistor ignition circuit
WCLA
ONSEMI 717 TRANSISTOR
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2N2708
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
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MIL-PRF-19500/302C
MIL-S-19500/302B
2N2708,
MIL-PRF-19500.
T0-72)
2N2708
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2N3442
Abstract: MIL-PRF19500 JANTX 2222 2N3442 JAN transistor d 331 data
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 05 November 1999. INCH-POUND MIL-PRF-19500/370D 05 August 1999 SUPERSEDING MIL-S-19500/370C 25 September 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
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MIL-PRF-19500/370D
MIL-S-19500/370C
2N3442,
MIL-PRF-19500.
2N3442
MIL-PRF19500
JANTX 2222
2N3442 JAN
transistor d 331 data
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2N335
Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
Text: MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,
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MIL-S-19500/37E
MIL-S-19500/37D
2N333,
2N335,
2N336,
2N333A,
2N335A,
2N336A,
2N333T2,
2N335T2,
2N335
2N335 JAN
2n333
2N336
2n336a
2N333A
2N335A
2N336LT2
transistor marking T2
2N336 JAN
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Untitled
Abstract: No abstract text available
Text: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BU323Z
OT-93/TO-218
O-220
BU323Z/D
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Untitled
Abstract: No abstract text available
Text: BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BU323Z
BU323Z
BU323Z/D
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Untitled
Abstract: No abstract text available
Text: SO T8 9 PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
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PBHV8540X
SC-62)
PBHV9040X.
AEC-Q101
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2N7368
Abstract: MC 3041
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 22 January 1998 INCH-POUND MIL-PRF-19500/622A 22 October 1997 SUPERSEDING MIL-S-19500/622 5 April 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
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MIL-PRF-19500/622A
MIL-S-19500/622
2N7368
MIL-PRF-19500.
MC 3041
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Untitled
Abstract: No abstract text available
Text: BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BUB323Z
BUB323Z
BUB323Z/D
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a6251
Abstract: 2N6249 2N6250 2N6251 QPL-19500 A6249
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 December 1997. INCH POUND MIL-PRF-19500/510C 5 September 1997 SUPERSEDING MIL-S-19500/510B 18 April 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
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MIL-PRF-19500/510C
MIL-S-19500/510B
2N6249,
2N6250,
2N6251
MIL-PRF-19500.
a6251
2N6249
2N6250
2N6251
QPL-19500
A6249
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2N3442 CR
Abstract: 2N3442
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 November 2008. MIL-PRF-19500/370G 14 August 2008 SUPERSEDING MIL-PRF-19500/370F 31 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
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MIL-PRF-19500/370G
MIL-PRF-19500/370F
2N3442,
MIL-PRF-19500.
2N3442 CR
2N3442
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BC849W
Abstract: BC850W BC859BW BC859CW BC859W BC860BW BC860CW BC860W marking 4d npn
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W FEATURES
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M3D187
BC859W;
BC860W
OT323
BC849W
BC850W.
115002/00/04/pp7
BC850W
BC859BW
BC859CW
BC859W
BC860BW
BC860CW
BC860W
marking 4d npn
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diode cc 3053
Abstract: cc 3053 diode 2N6383 2N6384 2N6385 MIL-PRF19500 K 3053 TRANSISTOR
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 1999. INCH-POUND MIL-PRF-19500/523B 10 August 1999 SUPERSEDING MIL-S-19500/523A 21 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER
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MIL-PRF-19500/523B
MIL-S-19500/523A
2N6383,
2N6384,
2N6385,
MIL-PRF-19500.
diode cc 3053
cc 3053 diode
2N6383
2N6384
2N6385
MIL-PRF19500
K 3053 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PINNING FEATURES
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M3D187
BC859W;
BC860W
OT323
BC849W
BC850W.
115002/00/04/pp7
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2N7373
Abstract: 2N7373 transistor 2N5004
Text: INCH-POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 28 March 1998 MIL-PRF-19500/613A 28 December 1997 SUPERSEDING MIL-S-19500/613 30 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/613A
MIL-S-19500/613
2N7373,
MIL-PRF-19500.
O-254AA)
2N7373
2N7373 transistor
2N5004
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488e
Abstract: 2n5672 2N5672 JAN equivalent 1N1186A 2N5671
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 March 2009. MIL-PRF-19500/488E 9 December 2008 SUPERSEDING MIL-PRF-19500/488D 1 May 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
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MIL-PRF-19500/488E
MIL-PRF-19500/488D
2N5671
2N5672,
MIL-PRF-19500.
488e
2n5672
2N5672 JAN equivalent
1N1186A
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01903
Abstract: diode cc 3053 sd 431 transistor JANTXV 2N2880 equivalent 2n3749 2N2880 MIL-PRF19500 Stancor sd 1074 transistor
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 September 1999. INCH-POUND MIL-PRF-19500/315F 30 June 1999 SUPERSEDING MIL-S-19500/315E 10 March 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
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MIL-PRF-19500/315F
MIL-S-19500/315E
2N2880,
2N3749,
MIL-PRF-19500.
01903
diode cc 3053
sd 431 transistor
JANTXV 2N2880 equivalent
2n3749
2N2880
MIL-PRF19500
Stancor
sd 1074 transistor
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BU323Z
Abstract: BUB323Z BUB323ZG BUB323ZT4 BUB323ZT4G
Text: BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount http://onsemi.com The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BUB323Z
BUB323Z
BUB323Z/D
BU323Z
BUB323ZG
BUB323ZT4
BUB323ZT4G
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Untitled
Abstract: No abstract text available
Text: BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount http://onsemi.com The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as
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BUB323Z
BUB323Z
BUB323Z/D
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