Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC H D IM I M T28F800S2/M T28F008S 2 V 512K x 16, 1 MEG x 8 FLASH MEM ORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S martV oltage FEATURES PIN ASSIGNMENT (Top View) • • • • Sixteen 64K B/(32K -w ord) erase blocks Programmable sector protect
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T28F800S2/M
T28F008S
120ns,
150ns
56-Pin
MT28F600S2/MT2BF008S2V
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 5V/5V SECTORED ERASE FEATURES PIN ASSIGNMENT Top View • Thirty-two 64KB/(32K-word) erase blocks • Programmable sector lock • Deep Power-Down Mode: 5|lA MAX • 5V ±10% V cc and Vpp
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MT28F161
32K-word)
100ns,
150ns
56-Pin
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S24C MARK
Abstract: tsop 3602 9020 8-pin SOP SIP 400B nec 1251 P100G thomson 462 t P5VP-340B3-2 J 80222 P28D-100-600A1-1
Text: Packages Plastic DIP Dual In-line Package Units in mm 8-pin plastic DIP (300mil) 8 5 1 4 14-pin plastic DIP with TAB (300mil) 14 8 1 7 20.32 MAX. 7.62 10.16 MAX. 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 2.54
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300mil)
14-pin
P8C-100-300B,
P14CT-100-300B-1
X10679EJCV0SG00
S24C MARK
tsop 3602
9020 8-pin SOP
SIP 400B
nec 1251
P100G
thomson 462 t
P5VP-340B3-2
J 80222
P28D-100-600A1-1
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F800S2/MT28F008S2 V 512K x 16,1 MEG x 8 FLASH MEMORY FLASH MEMORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S m a r tV o lta g e FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX
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MT28F800S2/MT28F008S2
32K-word)
120ns,
150ns
70ns/120ns
90ns/150ns
56-Pin
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tsop 66
Abstract: MICRON 63 micron ddr TSOP RECEIVER general architecture of ddr sdram TSOP 66 Package MT46LC8M8TG-10 sdram pins detail
Text: ADVANCE 64 MEG: x8 DDR SDRAM MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architecture; two data accesses per clock cycle
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MT46LC8M8
tsop 66
MICRON 63
micron ddr
TSOP RECEIVER
general architecture of ddr sdram
TSOP 66 Package
MT46LC8M8TG-10
sdram pins detail
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY |V |IC = R O N 5V/5V SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks Programmable sector lock Deep Power-Down Mode: 5|iA MAX
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MT28F161
32K-word)
100ns,
150ns
56-Pin
i------A19
-DQ15
CT995.
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63-Ball
Abstract: fbe063-63-ball ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation
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Am29LV640M
16-Bit
16-Bit/8
128-word/256-byte
8-word/16-byte
63-ball
TS056
LAA064
fbe063-63-ball
ei 306 20 64
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Untitled
Abstract: No abstract text available
Text: ADVANCE 64 MEG: x8 DDR SDRAM MICRON I TECHNOLOGY, INC. MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
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MT46LC8M8
66-PIN
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MR26T51203L
Abstract: OKI date code MR26T51203L-XXXMB
Text: PEDR26T51203L-02-03 OKI Semiconductor MR26T51203L 32M–Word x 16–Bit or 64M–Word × 8–Bit Issue Date: Jun. 17, 2003 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit/67,108,864-word × 8-bit electrically switchable configuration · 2.7 V to 3.6 V power supply
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PEDR26T51203L-02-03
MR26T51203L
432-word
16-bit/67
864-word
MR26T51203L-xxxTM
50-pin
50-P-400-0
MR26T51203L-xxxMB
70-pin
MR26T51203L
OKI date code
MR26T51203L-XXXMB
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30V 20A power p MOSFET
Abstract: Transistor Mosfet N-Ch 30V SPC6602 SPC6602ST6RG
Text: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6602
SPC6602
30V 20A power p MOSFET
Transistor Mosfet N-Ch 30V
SPC6602ST6RG
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IDT package marking
Abstract: IDT marking IDT marking TQFP IDT TOP SIDE package marking A-0410-02 IDT CODE DATE marking MQUAD pbga 144 TQFP 132 PACKAGE PDIP-48
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0410-02 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: 10/5/2004 DATE: All IDT Products (see attached list)
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SPC6604ST6RGB
Abstract: SPC6604 SPC6604ST6RG
Text: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6604
SPC6604
SPC6604ST6RGB
SPC6604ST6RG
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SPC6604
Abstract: SPC6604ST6RG N and P MOSFET
Text: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6604
SPC6604
SPC6604ST6RG
N and P MOSFET
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SPC6601
Abstract: SPC6601ST6RG 6P marking TSOP 6 marking 52 N and P MOSFET
Text: SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6601
SPC6601
SPC6601ST6RG
6P marking
TSOP 6 marking 52
N and P MOSFET
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TOP SIDE MARKING OF MICRON
Abstract: ba0 marking
Text: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks MT46V4M16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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64Mx4x8x16DDRSDRAM
TOP SIDE MARKING OF MICRON
ba0 marking
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Untitled
Abstract: No abstract text available
Text: UG416S6486KSE-PHPN Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 4 pcs 16M x 16 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UG416S6486KSE-PHPN
PC100
UG416S6486KSE-PHPN
16Mbits
144-Pin
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Untitled
Abstract: No abstract text available
Text: UG42S6428GSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 2M x 8 SDRAM with LVTTL, 2 banks & 2K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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UG42S6428GSG-PL
PC100
UG42S6428GSG-PL
144-Pin
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Untitled
Abstract: No abstract text available
Text: UGM16T6686KA-PH Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 64 bits SYNCHRONOUS DRAM MODULE PC133 SDRAM Unbuffered MicroDIMM based on 4 pcs 16M x 16 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UGM16T6686KA-PH
PC133
UGM16T6686KA-PH
16Mbits
144-Pin
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UG432S6488KSG
Abstract: No abstract text available
Text: UG432S6488KSG Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 32M x 8 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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UG432S6488KSG
PC100
UG432S6488KSG-PL/PH
32Mbits
144-Pin
UG432S6488KSG
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MARKING U1
Abstract: No abstract text available
Text: UG42S6442HSG Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 2 pcs 2M x 32 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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UG42S6442HSG
PC100
UG42S6442HSG-PL/PH
144-Pin
MARKING U1
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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mosfet triggering circuit USING TL494
Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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SG388/D
May-2001
The422-3781
r14525
SG388/D
mosfet triggering circuit USING TL494
controller for PWM fan tl494
TIP35C TIP36C sub amplifier circuit diagram
74ls TTL family
UC3842 variable voltage smps design with TL431
Buck converter with sg3526
UC3842 smps design with TL431
MC44608P40 equivalent
TRANSISTOR MPS2112
MC3364D
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