vestigial sideband filter
Abstract: No abstract text available
Text: SAW Components Vestigial Sideband Filter B 545 45,75 MHz Data Sheet Metal package DIP 24-06 Standard ● M/N Features ● Vestigial sideband filter without sound ● Constant group delay ● Hermetically sealed metal package Terminals ● Gold-plated NiFeCo alloy
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B39460-B
545-G310
C61157-A7-A3
F61064-V8013-Z000
vestigial sideband filter
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PMA-545
Abstract: PL-299 ZVA-24 monolithic circuit layout marking A Monolithic Amplifier marking 5 Monolithic Amplifier MARKING 545 DBM N5242a TB-502 marking package 545 amplifier
Text: Low Noise, High IP3 Monolithic Amplifier 0.1-6 GHz Product Features • Single Positive Supply Voltage, 3V • Low Noise Figure, 0.8 dB typ. at 1GHz • High IP3, 36 dBm typ. 1GHz • Gain, 20dB typ. at 1 GHz • Output Power, up to +20dBm typ. • Micro-miniature size
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20dBm
PMA-545+
DQ849
2002/95/EC)
J-STD-020D
C/85RH
PMA-545
PL-299
ZVA-24
monolithic circuit layout
marking A Monolithic Amplifier
marking 5 Monolithic Amplifier
MARKING 545 DBM
N5242a
TB-502
marking package 545 amplifier
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teledyne 7107
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 545 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 545 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and
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Untitled
Abstract: No abstract text available
Text: H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 545 Series Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The 545 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure
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500MHz
5963-2534E
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm
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P-VQFN-20-3
Q62705-K0608
P-VQFN-20
EHA07523
GVQ09290
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teledyne 7107
Abstract: c 4977 transistor UTC 2003
Text: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 545 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 545 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and
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Untitled
Abstract: No abstract text available
Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.4 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System
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AWB7125
AWB7125
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Untitled
Abstract: No abstract text available
Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Ampliier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System
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AWB7125
AWB7125
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Untitled
Abstract: No abstract text available
Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System
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AWB7125
AWB7125
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Untitled
Abstract: No abstract text available
Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System
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AWB7125
AWB7125
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Untitled
Abstract: No abstract text available
Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System
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AWB7125
AWB7125
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Untitled
Abstract: No abstract text available
Text: SAW Bandpass Filter F8364 Features CDMA applications Usable bandwidth of 25 MHz No impedance matching require for operation at 50 Ω Ceramic Surface Mounted Device Package 3.0 mm * 3.0 mm Single-ended Operation RoHS Compliant Package Dimensions 1 2 I
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F8364
300mm/min
NF7008-AS01
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MICROWAVE TRANSITOR
Abstract: BFY405
Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz Outstanding G ms = 23 dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
Transistor25
MICROWAVE TRANSITOR
BFY405
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micro-X Package MARKING CODE C
Abstract: INFINEON DETAIL micro-X Package MARKING CODE 3
Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
25-Line
Transistor25
BFY405
QS9000
micro-X Package MARKING CODE C
INFINEON DETAIL
micro-X Package MARKING CODE 3
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Untitled
Abstract: No abstract text available
Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package
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BFY405
25-Line
Transistor25
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RF TRANSISTOR NPN MICRO-X
Abstract: BFY405
Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
25-Line
Transistor25
QS9000
RF TRANSISTOR NPN MICRO-X
BFY405
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BFY405
Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
QS9000
BFY405
Micro-X marking "K"
35 micro-X Package MARKING CODE Q
low noise Micro-X marking "K"
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gaas fet marking
Abstract: No abstract text available
Text: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm
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CMH192
Q62705-K0608
P-VQFN-20
gaas fet marking
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LDS 5461
Abstract: LDS - 5461 934 562 001 KGF1146 KGF1165 KGF1305 7589
Text: OKI electronic components KGF1 1 4 6 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current dissipa tion, high output power, and high isolation. The KGF1146 has the specifications guaranteed by
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KGF1146_
KGF1146
bui013
0Q22b3Ã
KGF1146
b724E40
LDS 5461
LDS - 5461
934 562 001
KGF1165
KGF1305
7589
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LDS - 5461
Abstract: No abstract text available
Text: O K I electronic components KGF1146 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current dissipa tion, high output power, and high isolation. The KGF1146 has the specifications guaranteed by
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KGF1146
KGF1146
b724240
0Q22b3fi
L724240
0022b3^
LDS - 5461
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
Transistor25
QS9000
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RF TRANSISTOR NPN MICRO-X
Abstract: No abstract text available
Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package
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BFY405
25-Line
Transistor25
QS9000
RF TRANSISTOR NPN MICRO-X
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Untitled
Abstract: No abstract text available
Text: 7 " FUJITSU MI CROELECTRONI CS 47E D • 37MT7b2 7 7 001fi3bl - 0 ? b ■FU I FUJITSU October 1990 DATA SHEET■ M3 Series D101 Piezoelectric Device Modulator, 50 MHz to 300 MHz These piezoelectric modulators feature direct oscillators (50 MHz to 300 MHz). The
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37MT7b2
001fi3bl
LiTa03)
-145M00-D101
ES-38
M3DA-145M00-D101
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Untitled
Abstract: No abstract text available
Text: 2SC4197 Silicon NPN Epitaxial HITACHI Application UH F frequency converter, wide band amplifier Outline MPAK ^ 2 538 1. Emitter 2. Base 3. Collector 2SC4197 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 25 V
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2SC4197
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