Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING 5A1 SOT23 Search Results

    MARKING 5A1 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING 5A1 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


    Original     		PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    5C1 SOT-23

    Abstract: sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5C1 SOT-23 sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G

    5B1 SOT-23

    Abstract: LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5B1 SOT-23 LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807-16LT1 BC807-25LT1 BC807-40LT1 TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) A -50 V 0. 95 0. 4 -0.5 0. 95 2. 4 1. 3 1. 9 Collector current


    Original     		PDF OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 OT-23 -100mA -500mA, -50mA BC807-16LT1 BC807-25LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    WOST05C

    Abstract: 15KV WOST12C 5a1 DIODE
    Text: WOST04C thru WOST15C Surface Mount TVS Diode Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 4-15 VOLTS P b Lead Pb -Free Features: * Transient Protection for data lines as per IEC 61000-4-2(ESD)15KV(air), 8KV(contact) * 300 Watts Peak Power Protection. (tp=8/20µS)


    Original     		PDF WOST04C WOST15C OT-23 OT-23 18-Sep-09 WOST05C 15KV WOST12C 5a1 DIODE

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101

    LBC80725LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 3000/Tape LBC80725LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER １．０ 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ V ０．９５ A ０．４ １．９ FEATURES Power dissipation PCM : 0.3 Collector current


    Original     		PDF OT-23 BC807-16LT1 BC807-25LT1 BC807-40LT1 BC807-25LT1 BC807-40LT1 037TPY 950TPY 550REF

    marking code 5b1

    Abstract: 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1
    Text: WILLAS BC807-xxLT1 General Purpose Transistors PNP Silicon FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO max = -45 V. General purpose switching and amplification. PNP complement: BC807 Series. SOT–23 We declare that the material of product compliance with RoHS requirements.


    Original     		PDF BC807 BC807-xxLT1 BC807-16LT1 3000/Tape BC807-25LT1 BC807-40LT1 OT-23 marking code 5b1 5C1 SOT-23 Willas Electronic 5B1 SOT 23 5B1 SOT-23 sot23 marking 5c1 marking 5a1

    Untitled

    Abstract: No abstract text available
    Text: BC807-16 BC807-25 BC807-40 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A Collector-base Voltage 50V


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    5c sot-23

    Abstract: BC807-16 5B SOT23 marking 5a1 sot23 BC807-25 BC807-40 BC817 5C sot23 BC817 sot package sot-23 marking 5b sot-23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Amplifier FEATURES z Ideally suited for automatic insertion. z Complementary NPN type available BC807-16/-25/-40 Pb Lead-free BC817 z Epitaxial planar die construction. APPLICATIONS z This device is designed for general purpose amplifier


    Original     		PDF BC807-16/-25/-40 BC817 OT-23 BC807-16 BC807-25 BC807-40 BL/SSSTC041 5c sot-23 BC807-16 5B SOT23 marking 5a1 sot23 BC807-25 BC807-40 BC817 5C sot23 BC817 sot package sot-23 marking 5b sot-23

    marking 5a1 sot23

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40 marking 5a1 sot23

    Untitled

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    BC807-40/5C

    Abstract: No abstract text available
    Text: MCC BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202, BC807-40/5C

    BC807-40

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202,

    BC807-40

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation.


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 -55OC OT-23 MIL-STD-202, BC807-40

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF BC807-16 BC807-25 BC807-40 -55OC OT-23 OT-23 MIL-STD-202

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P la stic-E n cap s u ia te T r a n s is to r s ^ ^ ^ B C 807-16/25/40L T 1 TR A N SIS TO R PNP m 1.BASE 2.EMITTER 3.COLLECTOR FEATURES ^ iM è r^ b s ip a tio n PcM: 0.3 W ( Tamb=25'C ) . ICM: filfcfa -0.5 A V(br)cbo:-50V storage junction temperature range


    OCR Scan     		PDF OT-23 807-16/25/40L -10mA, -500m BC807-16LT1 BC807-25 BC807-40LT1 BC807-16

    Untitled

    Abstract: No abstract text available
    Text: : S v î^ S e m i ; SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR BC807 -16LT1 BC807 -25LT1 BC8 0 7 -40LT1 TRANSISTOR SOT — 23 1. BASE 2. EMI H E R 3. COLLECTOR FEATURES Power dissipation 0.3 Pcm Collector current 1 cm : PNP W -0 .5 (Tamb=25 °C)


    OCR Scan     		PDF BC807 -16LT1 -25LT1 -40LT1 -10mA OT-23 950TPY 037TPY 550REF