5B1 SOT23
Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G
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LBC807-16LT1
LBC807-16LT1G
OT-23
LBC807-40LT1
LBC807-40LT1G
LBC807-25LT1
LBC807-25LT1G
5B1 SOT23
5B1 SOT-23
sot23 marking 5c1
marking 5b1
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marking 6a2 smd
Abstract: zener Z11B
Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C
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500mW
94Leakage
marking 6a2 smd
zener Z11B
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BC807-40
Abstract: 5B1 SOT-23 BC807-16 BC807-25
Text: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO
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BC807-16/
BC807-25
BC807-40
OT-23
BC807-16/BC807-25
OT-23
BC807-40
5B1 SOT-23
BC807-16
BC807-25
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TK4892
Abstract: No abstract text available
Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1
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TS3L4892
16-BIT
SCDS251
000-V
A114-B,
TK4892
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Untitled
Abstract: No abstract text available
Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1
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TS3L4892
16-BIT
SCDS251
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IPB065N15N3
Abstract: 5F040 ED 05 Diode marking EB5
Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPB065N15N3
7865AE5
5F040
ED 05 Diode
marking EB5
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Untitled
Abstract: No abstract text available
Text: IPB027N10N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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IPB027N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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Untitled
Abstract: No abstract text available
Text: BSC360N15NS3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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BSC360N15NS3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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PDF
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Untitled
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5 Q)2 6B55<514@<1D9>7+?",3?=@<91>D
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IPA075N15N3
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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PDF
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Untitled
Abstract: No abstract text available
Text: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H )*&* Y I -1 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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IPD122N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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PDF
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Untitled
Abstract: No abstract text available
Text: IPA086N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< Q H35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H 0&. Y I9 ,- 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T ?@5B1D9>7D5=@5B1DEB5
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IPA086N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
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PDF
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CCD MARKING
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $
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IPA075N15N3
CCD MARKING
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marking 9D
Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
Text: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPA086N10N3
7865AE5
marking 9D
marking eb5
diode 1D
marking g9
55B5
7865a
DIODE Z6
Diode 9H
DIODE ED 99
package marking 5f
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4b 5c marking
Abstract: No abstract text available
Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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BSC360N15NS3
4b 5c marking
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Q451
Abstract: 95B9 C19B marking EB5 d91d package marking 5f
Text: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H-( )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPD180N10N3
7865AE5
Q451
95B9
C19B
marking EB5
d91d
package marking 5f
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PDF
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IPD320N20N3
Abstract: marking EB5
Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD320N20N3
7865AE5
marking EB5
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IPD600N25N3 G
Abstract: No abstract text available
Text: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD600N25N3
7865AE5
IPD600N25N3 G
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IPB027N10N3
Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
Text: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPB027N10N3
7865AE5
marking 1D
55B5
Q451
EB5 MARKING
marking G9
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PDF
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Samsung Electro-Mechanics
Abstract: HP8920A marking D9 diode phase*detector ru2475b18haa ND15
Text: APPROVAL APP LIC ABL E CUS TOM ER MOD EL RU 240 3H1 8HA A RU 247 5B1 8HA A TIT LE No. MO DEL N o. PO INT D ES CRI BE D AS A BOV E: TH IS RF -UN IT IS D ESI GNE D FOR 2 .4G Hz CO RDL ESS P HON E. WE S UBM IT AP PRO VAL F OR YO UR EX AMI NAT ION A S FOL LOW .
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TK4892
Abstract: No abstract text available
Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1
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TS3L4892
16-BIT
SCDS251
000-V
A114-B,
TK4892
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PDF
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TK4892
Abstract: TS3L4892RHHR C101 A4821
Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1
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TS3L4892
16-BIT
SCDS251
TK4892
TS3L4892RHHR
C101
A4821
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PDF
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TK4892
Abstract: TS3L4892RHHR
Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1
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TS3L4892
16-BIT
SCDS251
000-V
A114-B,
TK4892
TS3L4892RHHR
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PDF
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TK4892
Abstract: RHH package
Text: TS3L4892 16-BIT TO 8-BIT SPDT GIGABIT LAN SWITCH WITH LED SWITCH www.ti.com SCDS251 – MARCH 2008 FEATURES 1 28 29 31 30 32 34 33 A0 VCC LED2 2LED1 2LED2 0B1 1B1 0B2 1B2 36 35 20 9 19 18 21 8 17 22 7 16 23 6 15 24 5 14 25 4 12 3 SEL 2B1 3B1 2B2 3B2 4B1 5B1
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TS3L4892
16-BIT
SCDS251
000-V
A114-B,
TK4892
RHH package
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 54 . BCP 56 NPN Silicon AF Transistors • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCR 51 . BCP 53 PNP Type Marking Ordering Code (tape and reel) Pin Configuration
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OCR Scan
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Q62702-C2117
Q62702-C2119
Q62702-C2120
Q62702-C2148
Q62702-C2122
Q62702-C2123
Q62702-C2149
Q62702-C2125
Q62702-C2106
OT-223
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