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    MARKING 6-PIN PLASTIC TSON Search Results

    MARKING 6-PIN PLASTIC TSON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPN6R706NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 40 A, 0.0067 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPN7R104NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 20 A, 0.0071 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPN3R804NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 40 A, 0.0038 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 6-PIN PLASTIC TSON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    VP215

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2137T5A L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device is housed in a 16-pin TSON Thin small out-line non-leaded package. And this package is able to


    Original     		PDF PG2137T5A PG2137T5A 16-pin VP215

    TFL0816-15N

    Abstract: UPG2301TQ 10-PIN PG2301TQ GRM39CH grm39 GRM39CH102J50
    Text: DATA SHEET NEC's POWER AMPLIFIER FOR BLUETOOTH CLASS 1 UPG2301TQ FEATURES DESCRIPTION • OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz 2 450 MHz TYP. NEC's µPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. • SUPPLY VOLTAGE VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)


    Original     		PDF UPG2301TQ PG2301TQ 10-pin PG2301TQ TFL0816-15N UPG2301TQ GRM39CH grm39 GRM39CH102J50

    PC8236T6N

    Abstract: PC8236T6N-E2-A marking 6-PIN PLASTIC TSON HS350
    Text: PRELIMINARY PRODUCT INFORMATION BIPOLAR ANALOG INTEGRATED CIRCUIT PC8236T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8236T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the


    Original     		PDF PC8236T6N PC8236T6N IR260 WS260 HS350 PC8236T6N-E2-A marking 6-PIN PLASTIC TSON HS350

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The PG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having


    Original     		PDF PG2162T5N PG2162T5N PG10632EJ01V0DS

    PG2250T5N-E2

    Abstract: PG2250T5N MARKING G5C PG10639EJ03V0DS
    Text: GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power.


    Original     		PDF PG2250T5N PG2250T5N PG10639EJ03V0DS PG2250T5N-E2 MARKING G5C PG10639EJ03V0DS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC's L-BAND 4W HIGH POWER SPDT SWITCH IC UPG2027TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: NEC's UPG2027TQ is a high power SPDT GaAs Switch IC 0.40 dB TYP. @ 1.0 GHz for digital cellular and cordless telephone applications. This 0.50 dB TYP. @ 2.0 GHz


    Original     		PDF 10-pin UPG2027TQ UPG2027TQ UPG2027TQ-E1-A IR260 VP215 WS260 HS350

    Untitled

    Abstract: No abstract text available
    Text: CMOS INTEGRATED CIRCUIT PD5738T6N WIDE BAND DPDT SWITCH DESCRIPTION The PD5738T6N is a CMOS MMIC DPDT Double Pole Double Throw switch which is developed for mobile communications, wireless communications and another RF switching applications. This device can operate within frequency from 0.01 to 2.5 GHz, having low insertion loss and high isolation


    Original     		PDF PD5738T6N PD5738T6N PU10750EJ01V0DS IR260 HS350

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2164T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The PG2164T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having


    Original     		PDF PG2164T5N PG2164T5N PG10636EJ02V0DS

    DPDT 6 terminal switch internal diagram

    Abstract: F MARKING 6PIN
    Text: GaAs INTEGRATED CIRCUIT PG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The PG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having


    Original     		PDF PG2162T5N PG2162T5N PG10632EJ02V0DS DPDT 6 terminal switch internal diagram F MARKING 6PIN

    PC8240T6N

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The PC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit low noise amplifier for GPS. This device exhibits low noise figure and high gain characteristics, to improve the sensitivity of GPS receivers.


    Original     		PDF PC8240T6N PC8240T6N HS350 WS260 IR260 PU10735EJ01V0DS

    PC8236T6N

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8236T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The PC8236T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the


    Original     		PDF PC8236T6N PC8236T6N HS350 WS260 IR260 PU10713EJ01V0DS

    nec 2031

    Abstract: 10-PIN HS350 UPG2031TQ UPG2031TQ-E1 VP215
    Text: NEC's L-BAND SP3T SWITCH UPG2031TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz NEC's UPG2031TQ is an L-band SP3T GaAs FET switch for CDMA/PCS/GPS triple mode digital cellular telephone applications. The device can operate from 500 MHz to above 2.0


    Original     		PDF UPG2031TQ UPG2031TQ 10-pin HS350 nec 2031 HS350 UPG2031TQ-E1 VP215

    Untitled

    Abstract: No abstract text available
    Text: GaAs HBT INTEGRATED CIRCUIT PG2314T5N POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed


    Original     		PDF PG2314T5N PG2314T5N PG10624EJ02V0DS

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power.


    Original     		PDF PG2250T5N PG2250T5N PG10639EJ03V0DS

    10-PIN

    Abstract: HS350 UPG2024TQ VP215
    Text: DATA SHEET NEC's GaAs MMIC DPDT SWITCH UPG2024TQ FOR 5 GHz BAND FEATURES DESCRIPTION • NEC's UPG2024TQ is a high power GaAs MMIC DPDT switch for 5 GHz band wireless LAN and other applications. OPERATING FREQUENCY: 4.8 to 5.85 GHz • The UPG2024TQ combines high performance features in a


    Original     		PDF UPG2024TQ UPG2024TQ HS350 10-PIN HS350 VP215

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2415T6X 0.05 to 6.0 GHz SPDT SWITCH DESCRIPTION The PG2415T6X is a GaAs MMIC SPDT Single Pole Double Throw switch for 0.05 to 6.0 GHz applications, including dual-band wireless LAN. This device operates with dual control switching voltages of 2.7 to 3.3 V. This device can operate at frequencies


    Original     		PDF PG2415T6X PG2415T6X PG10797EJ01V0DS

    HS350

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT µPG2164T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The µPG2164T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having


    Original     		PDF PG2164T5N PG2164T5N HS350

    10-PIN

    Abstract: TFL0816-15N UPG2301TQ PG2301TQ-E1
    Text: DATA SHEET NEC's POWER AMPLIFIER FOR BLUETOOTH CLASS 1 UPG2301TQ FEATURES DESCRIPTION • OPERATION FREQUENCY fopt = 2,400 to 2,500 MHz 2 450 MHz TYP. NEC's PG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. • SUPPLY VOLTAGE VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)


    Original     		PDF UPG2301TQ PG2301TQ 10-pin TFL0816-15N UPG2301TQ PG2301TQ-E1

    PG2409T6X-E2-A

    Abstract: PG2409T6X-E2 PG2409T6X
    Text: GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAXTM DESCRIPTION The PG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.


    Original     		PDF PG2409T6X PG2409T6X PG10773EJ01V0DS PG2409T6X-E2-A PG2409T6X-E2

    HS350

    Abstract: DPDT 6 terminal switch internal diagram
    Text: GaAs INTEGRATED CIRCUIT µPG2162T5N DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION The µPG2162T5N is a GaAs MMIC DPDT Double Pole Double Throw switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having


    Original     		PDF PG2162T5N PG2162T5N HS350 DPDT 6 terminal switch internal diagram

    UPG2027TQ-A

    Abstract: VP215 10-PIN HS350 UPG2027TQ UPG2027TQ-E1-A
    Text: DATA SHEET NEC's L-BAND 4W HIGH POWER SPDT SWITCH IC FEATURES • DESCRIPTION NEC's UPG2027TQ is a high power SPDT GaAs Switch IC LOW INSERTION LOSS: for digital cellular and cordless telephone applications. This 0.40 dB TYP. @ 1.0 GHz device can operate from 500 MHz to above 2.0 GHz, with low


    Original     		PDF UPG2027TQ UPG2027TQ 10-pin UPG2027TQ-A VP215 HS350 UPG2027TQ-E1-A