SOT23 marking 619
Abstract: marking 619 npn sot23
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A
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FMMT619
200mV
625mW
FMMT720
AEC-Q101
DS33236
SOT23 marking 619
marking 619 npn sot23
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A
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Original
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FMMT619
200mV
625mW
FMMT720
AEC-Q101
DS33236
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PDF
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FMMT619TA
Abstract: FMMT619TC FMMT619 FMMT720
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A
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Original
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FMMT619
200mV
625mW
FMMT720
AEC-Q101
DS33236
FMMT619TA
FMMT619TC
FMMT619
FMMT720
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PDF
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all diodes ratings
Abstract: FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO > 50V IC cont = 2A 625mW Power dissipation Low Equivalent On Resistance
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Original
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FMMT619
625mW
OT-23
J-STD-020
DS33236
all diodes ratings
FMMT619TA
SOT23 marking 619
marking 619 sot23
marking 619
FMMT619
led driver sot-23
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PDF
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FMMT619
Abstract: fmmt720
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation
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Original
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FMMT619
625mW
200mV
FMMT720
AEC-Q101
DS33236
FMMT619
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PDF
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smd transistor MARKING 2A
Abstract: No abstract text available
Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1
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FMMT619
OT-23
625mw
200mA
100MHz
smd transistor MARKING 2A
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BSS81C
Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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BSS79,
BSS81
BSS80,
BSS82
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
BSS81C
BSS79
BSS79B
BSS79C
BSS80
BSS81
BSS81B
BSS82
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PDF
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BSS79
Abstract: No abstract text available
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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BSS79,
BSS81
BSS80,
BSS82
VPS05161
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
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PDF
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br 2222 npn
Abstract: SMBT2222A SMBT2907A
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
May-29-2001
br 2222 npn
SMBT2222A
SMBT2907A
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PDF
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npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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Original
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
Jul-11-2001
npn 2222 transistor
s1P SOT23
SMBT2222A SOT23
SMBT2222A
SMBT2907A
MARKING s1P
MARKING 1B SOT23
EHN00056
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PDF
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MARKING s1P
Abstract: 99V0
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
Nov-30-2001
2222/A
EHP00742
EHP00743
MARKING s1P
99V0
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E
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BSS79,
BSS81
BSS80,
BSS82
VPS05161
BSS79B
BSS79C
BSS81B
BSS81C
BSS79
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# FMMT619 Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates
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FMMT619
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NPN SOT23-6
Abstract: ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC DSA0037435
Text: ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10N50DE6
OT23-6
OT23-6
NPN SOT23-6
ZXT10N50DE6
ZXT10N50DE6TA
ZXT10N50DE6TC
DSA0037435
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PDF
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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VPS05161
OT-23
2222/A
EHP00744
EHP00745
Oct-14-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222A transistor
2222a
2907a TRANSISTOR PNP
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npn 2222 transistor
Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
npn 2222 transistor
MMBT2222A
SMBT2222A
SMBT2907A
MARKING s1P
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PDF
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MARKING s1P
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
MARKING s1P
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PDF
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
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PDF
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
s1P SOT23
619 SOT23-3
h11e
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PDF
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PMBT2369
Abstract: No abstract text available
Text: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli cations in thick and thin-film circuits.
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OCR Scan
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PMBT2222
PMBT2222A
PMBT2369
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PDF
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Untitled
Abstract: No abstract text available
Text: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli cations in thick and thin-film circuits.
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OCR Scan
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bb53T31
BSR13
BSR14
7Z82485
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PDF
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BSR13
Abstract: BSR14 CBO10
Text: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA
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OCR Scan
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711Qaeb
BSR13
BSR14
BSR13
BSR14
7Z82486
7Z82484
CBO10
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PDF
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sot-23 MARKING CODE ZA
Abstract: marking code VV transistors BSR13 BSR14 marx generator
Text: •I bbSB^Bl ODcfSSb"! bö4 H A P X N AI1ER P H IL IP S /D IS C R E T E BSR13 BSR14 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli cations in thick and thin-film circuits.
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OCR Scan
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BSR13
BSR14
BSR13
7Z82487
100//s
sot-23 MARKING CODE ZA
marking code VV transistors
BSR14
marx generator
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PDF
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