umax8
Abstract: uMAX10 CC2512 uMAX TFM 5199 MARKING 61525 CC2010 CC0805 QSOP150 SC70-6
Text: Ironwood Electronics, Inc. PO Box 21151 ¥ St. Paul, MN 55121 ¥ 651 452-8100 ¥ Fax (651) 452-8400 General Description of PN-analogSMT-01 The analog prototyping panel, PN-analogSMT-01, is organized with IC patterns and discrete SMT shapes interspersed. The list of patterns is shown on the following pages.
|
Original
|
PN-analogSMT-01
PN-analogSMT-01,
PN-ANALOGSMT-01
umax8
uMAX10
CC2512
uMAX
TFM 5199
MARKING 61525
CC2010
CC0805
QSOP150
SC70-6
|
PDF
|
FZT851
Abstract: FZT851TA
Text: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V • • IC = 6A High Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •
|
Original
|
FZT851
OT223
100mV
FZT951
AEC-Q101
OT223
J-STD-020
DS33174
FZT851
FZT851TA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V IC = 6A High Continuous Collector Current Case Material: Molded Plastic. “Green” Molding Compound.
|
Original
|
FZT851
OT223
J-STD-020
100mV
MIL-STD-202,
FZT951
DS33174
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT1051A 40V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 40V IC = 5A high Continuous Collector Current ICM = 20A Peak Pulse Current
|
Original
|
FZT1051A
OT223
120mV
FZT1151A
AEC-Q101
DS33184
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT1048A 17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 17.5V • • BVCES > 50V • • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current
|
Original
|
FZT1048A
OT223
500mA
MIL-STD-202,
J-STD-020
DS33182
|
PDF
|
FZT651
Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage
|
Original
|
FZT651
OT223
FZT751
AEC-Q101
OT223
J-STD-020
FZT651TA
FZT651QTA
FZT651TC
FZT651
transistor fzt651
FZT marking code
FZT651QTC
|
PDF
|
X5T851
Abstract: ZX5T951G marking X5T
Text: A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V IC = 6A high Continuous Collector Current ICM = 20A Peak Pulse Current
|
Original
|
ZX5T851G
OT223
-60mV
ZX5T951G
AEC-Q101
OT223
J-STD-020
DS33421
X5T851
marking X5T
|
PDF
|
FZT853
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 100V • • IC = 6A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •
|
Original
|
FZT853
OT223
150mV
FZT953
AEC-Q101
OT223
J-STD-020
DS33175
FZT853
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V IC = 3.5A High Continuous Collector Current ICM = 5A Peak Pulse Current Very Low Saturation Voltage VCE sat < 155mV @ 1A
|
Original
|
FZT857
OT223
155mV
FZT957
AEC-Q101
DS33177
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC = 3A Low Saturation Voltage
|
Original
|
FZT651
OT223
FZT751
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
DS33149
|
PDF
|
FZT857QTA
Abstract: Y1 marking MARKING fzt
Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V IC = 3.5A High Continuous Collector Current Case Material: Molded Plastic. “Green” Molding Compound.
|
Original
|
FZT857
OT223
155mV
FZT957
AEC-Q101
OT223
J-STD-020
DS33177
FZT857QTA
Y1 marking
MARKING fzt
|
PDF
|
ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
|
Original
|
|
PDF
|
HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
|
Original
|
product25
HV9961
2N7002 MARKING 1702
HV9963
HV9910
hv9910b
SR087
str 6655
STR 6656
DN2450
HV509
|
PDF
|
STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
|
Original
|
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: ON Semiconductort PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface
|
Original
|
PZT651T1
inch/1000
PZT651T3
inch/4000
PZT751
r14525
PZT651T1/D
|
PDF
|
zt751
Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
Text: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30
|
OCR Scan
|
OT-223
BSP19AT1
PZTA42T1
BF720T1
BSP20AT1
SP19A
BF720
SP20A
PZTA98T1
PZTA92T1
zt751
3055L
2955E
3055e
zta96
2N02L
marking 651 sot223
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Central Semiconductor Corp. CZT2907A PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose amplifier and switching applications.
|
OCR Scan
|
CZT2907A
OT-223
150mA,
OT-223
26-September
|
PDF
|
marking 651 sot223
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for
|
OCR Scan
|
PZT651T1
OT-223
marking 651 sot223
|
PDF
|
marking 51 sot223
Abstract: bsp52
Text: BSP 50. BSP 52 NPN Silicon Darlington Transistors • High collector current • Low collect or -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking Ordering code (12-mm tape ) Package* BSP 50 BSP 50 Q62702- P1163 SOT-223
|
OCR Scan
|
12-mm
Q62702-
P1163
Q62702
P1164
OT-223
OT-223
BSP52
300ps;
marking 51 sot223
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSP 50. BSP 52 NPN Silicon Darlington Transistors 32E D • ISIP 0231=320 Q017Q73 Q SIEMENS/ SPCL ■, SEMICONDS T '3 3 - 3 - 7 • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking
|
OCR Scan
|
Q017Q73
12-mm
Q62702-P1163
OT-223
Q62702-
P1164
Q62702-P1165
BSP50
|
PDF
|
marking 651
Abstract: marking 651 sot223 PZT651T3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E pitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for
|
OCR Scan
|
OT-223
PZT651T1
inch/1000
PZT651T3
inch/4000
marking 651
marking 651 sot223
|
PDF
|
P2T65
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P2T651T1 NPN Silicon Planar E pitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is
|
OCR Scan
|
OT-223
PZT651T1
inch/1000
PZT651T3
inch/4000
P2T65
|
PDF
|
MARKING 93 SOT-223
Abstract: sot-223 body marking D K Q F
Text: Order this data sheet MOTOROLA by PZT651T1/D SEMICONDUCTOR TECHNICAL DATA PZT651T1 NPN Silicon Planar Epitaxial TVansistor M o to ro la P referre d D e vic e This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for
|
OCR Scan
|
PZT651T1/D
OT-223
PZT651T1
inch/1000
PZT651Tl
PZT651T1
MARKING 93 SOT-223
sot-223 body marking D K Q F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: b3b?254 Q101b32 TS7 • M O T b Order this data sheet by PZT651T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT651T1 NPN Silicon Planar Epitaxial Transistor M o to ro la P referre d D evice This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
|
OCR Scan
|
Q101b32
PZT651T1/D
PZT651T1
OT-223
PZT751T1
|
PDF
|
