Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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L2N7002LT1G
236AB)
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micro-x marking code E1
Abstract: 0004E4 SOT 86 MARKING E4
Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)
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SSOP-28
TQFP-48
micro-x marking code E1
0004E4
SOT 86 MARKING E4
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04B SOT363
Abstract: 35 micro-X Package MARKING CODE F
Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)
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HPMX-5001
SSOP-28
TQFP-32
TQFP-48
04B SOT363
35 micro-X Package MARKING CODE F
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micro-x marking code E1
Abstract: SOT363 marking 12X DRR1-23XX DRR1-38XX DRT1-23XX HSCH-9101 HSCH-9161 HSCH-9201 SOT 86 MARKING E4 sot-23 6121
Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)
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OLERANCES400
SSOP-28
TQFP-32
TQFP-48
micro-x marking code E1
SOT363 marking 12X
DRR1-23XX
DRR1-38XX
DRT1-23XX
HSCH-9101
HSCH-9161
HSCH-9201
SOT 86 MARKING E4
sot-23 6121
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Untitled
Abstract: No abstract text available
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays
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2N7002DW
500mA
OT-363
MIL-STD-750
006grams
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Mosfet
Abstract: 2N7002KG8 sot-363 702
Text: 2N7002KG8 60V MOSFET Main Product Characteristics VDSS 60V RDS on 7.5ohm(max.) ID A SOT-363 Schematic Diagram Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications
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2N7002KG8
OT-363
Mosfet
2N7002KG8
sot-363 702
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D02A
Abstract: 2N7002DW S2N7002DW
Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF
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S2N7002DW
115mA,
OT-363
Capacitance22
Capacitance11
Speed11
2N7002DW
OT-363Molded
MIL-STD-202,
26-Jul-2010
D02A
S2N7002DW
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D02A
Abstract: sot-363 702 2N7002DW
Text: 2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF
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2N7002DW
115mA,
OT-363
Capacitance22
Capacitance11
Speed11
OT-363Molded
MIL-STD-202,
2N7002DW
05-Jul-2010
D02A
sot-363 702
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S2N7002DW
Abstract: MosFET
Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0
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S2N7002DW
115mA,
OT-363
OT-363ï
MIL-STD-202,
19-May-2011
S2N7002DW
MosFET
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Untitled
Abstract: No abstract text available
Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF
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Original
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PDF
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S2N7002DW
115mA,
OT-363
OT-363ï
MIL-STD-202,
2N7002DW
26-Jul-2010
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Untitled
Abstract: No abstract text available
Text: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)
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2N7002DW
OT-363
SC-88)
13-May-2011
OT-363
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MARKING GA SOT-363
Abstract: 22PF 2N7002DW
Text: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic
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2N7002DW
OT-363
SC-88)
OT-363,
MIL-STD-202,
500mA
MARKING GA SOT-363
22PF
2N7002DW
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sot-363 702
Abstract: MARKING CODE 702 2N7002DW SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7
Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is
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2N7002DW
OT-363
SC70-6L)
OT-363
2N7002DW
T/R13
sot-363 702
MARKING CODE 702
SC70-6L
IDS500
2N7002DW-T
2N7002DW-T/R7
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2n7002kdW
Abstract: No abstract text available
Text: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns
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2N7002KDW
500mA
200mA
OT-363
2002/95/EC
OT-363
MIL-STD-750,
200mA
2n7002kdW
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smd mosfet sot-363
Abstract: DIODE smd marking 702 MOSFET SMD MARKING CODE 125OC 2N7002DW 702 mosfet smd marking D 702
Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2
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2N7002DW
MIL-STD-750D
METHOD-1051
125OC
1000hrs.
METHOD-1038
175OC
METHOD-1031
smd mosfet sot-363
DIODE smd marking 702
MOSFET SMD MARKING CODE
2N7002DW
702 mosfet smd marking
D 702
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
FM120-M+
2N7002DTHRU
FM1200-M+
OD-123H
0197FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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2N7002DW
Abstract: LTA 702
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays
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2N7002DW
500mA
2002/95/EC
OT-363
MIL-STD-750
2N7002DW
LTA 702
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marking 702
Abstract: No abstract text available
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES 0.018 0.45 0.006(0.15) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • Advanced Trench Process Technology 0.087(2.20) 0.078(2.00) • High Density Cell Design For Ultra Low On-Resistance
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2N7002DW
500mA
2002/95/EC
OT-363
MIL-STD-750
T-363
marking 702
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LTA 702 N
Abstract: LTA 702 42008 2N7002DW ZE marking sot-363 marking 702
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays
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PDF
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2N7002DW
500mA
2002/95/EC
OT-363
MIL-STD-750
LTA 702 N
LTA 702
42008
2N7002DW
ZE marking sot-363
marking 702
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LTA 702 N
Abstract: No abstract text available
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) 0.087(2.20) 0.078(2.00) • High Density Cell Design For Ultra Low On-Resistance
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2N7002DW
500mA
2002/95/EC
OT-363
MIL-STD-750
006grams
T-363
LTA 702 N
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2N7002DW
Abstract: LTA 702 N
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays
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Original
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PDF
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2N7002DW
500mA
2002/95/EC
OT-363
MIL-STD-750
2N7002DW
LTA 702 N
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LTA 702 N
Abstract: MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=5Ω 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • High Density Cell Design For Ultra Low On-Resistance
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2N7002DW
500mA
OT-363
OT-363
MIL-STD-750
006grams
Chara63
LTA 702 N
MARKING GA SOT-363
sot-363 702
marking 702
MARKING TE SOT363
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2
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2N7002DW
MIL-STD-883
500hrs.
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
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digital transistor array
Abstract: marking 702 sot363
Text: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration
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OCR Scan
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PDF
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OT-363
digital transistor array
marking 702 sot363
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