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    MARKING 7N6 MOSFET Search Results

    MARKING 7N6 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 7N6 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking 7n6 Mosfet

    Abstract: marking 7n6 7n6 diode zxmn6a07f
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for


    Original     		PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet marking 7n6 7n6 diode zxmn6a07f

    Marking 7n6 Mosfet

    Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
    Text: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits


    Original     		PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6

    7n6 TRANSISTOR

    Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
    Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate


    Original     		PDF MOS200604 H07N60 O-220AB 183oC 217oC 260oC 10sec H07N60E, 7n6 TRANSISTOR Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60E H07N60F marking code PB

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC uni00 ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet

    ZXMN6A07Z

    Abstract: ZXMN6A07ZTA
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07Z ZXMN6A07ZTA ZXMN6A07Z ZXMN6A07ZTA

    0018g

    Abstract: ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀; ID=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN6A07Z ZXMN6A07ZTA 0018g ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet

    Marking 7n6 Mosfet

    Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 7N6-04 Marking 7n6 Mosfet marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F

    ZXMN6A07Z

    Abstract: ZXMN6A07ZTA 7n6 diode
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07Z ZXMN6A07ZTA ZXMN6A07Z ZXMN6A07ZTA 7n6 diode

    ZXMN6A07F

    Abstract: Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F Marking 7n6 Mosfet

    Marking 7n6 Mosfet

    Abstract: No abstract text available
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet

    Marking 7n6 Mosfet

    Abstract: 7n6 diode
    Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07Z ZXMN6A07ZTA SEMI-04 Marking 7n6 Mosfet 7n6 diode

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 2.5 0.350 @ VGS= 4.5V 2.1 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


    Original     		PDF ZXMN6A07Z 00GmbH D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


    Original     		PDF ZXMN6A07F D-81541

    marking 7n6

    Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59
    Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


    Original     		PDF ZXMN6A07F ZXMN6A07FTA D-81541 marking 7n6 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59