Marking 7p6 sot23
Abstract: 7P6 SOT23 ZXMP6A13FQTA
Text: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for
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ZXMP6A13F
AEC-Q101
DS32014
Marking 7p6 sot23
7P6 SOT23
ZXMP6A13FQTA
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ZXMP6A13FTA
Abstract: ZXMP6A13FT ZXMP6A13F
Text: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications
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ZXMP6A13F
AEC-Q101
DS32014
522-ZXMP6A13FTA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications
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ZXMP6A13F
AEC-Q101
DS32014
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marking 7p6 sot-23
Abstract: ZXMP6A13F ZXMP6A13FTA
Text: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 400mΩ @ VGS= -10V 400mΩ = -1.1A 600mΩ @ VGS= -4.5V
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ZXMP6A13F
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DS32014
marking 7p6 sot-23
ZXMP6A13F
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ZXMP
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications
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ZXMP6A13F
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Abstract: No abstract text available
Text: ZXMP6A13FQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.
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DS36684
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Abstract: ZXMP6A13FTA ZXMP6A13FTC
Text: ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
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Abstract: ZXMP6A13F ZXMP6A13FTC DIODE 09A
Text: ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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DIODE 09A
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TS16949
Abstract: ZXMP6A13F ZXMP6A13FTA ZXMP6A13FTC
Text: ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
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ZXMP6A13F
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D-81541
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