Untitled
Abstract: No abstract text available
Text: 外形寸法図・参考パターン寸法 ●USP-8A01 Unit: mm •外形寸法図 ■参考パターンレイアウト 参考メタルマスクデザイン テーピング仕様 ●USP-8A01 リール Unit: mm 3000 個/リール ■テーピング仕様 R タイプ：標準挿入
|
Original
|
PDF
|
USP-8A01
USP-8A01æ
USP-8A01
UL94V-0
|
Untitled
Abstract: No abstract text available
Text: 管理計画 USP-8A01 CONTROL PLAN (USP-8A01) ﾄﾚｯｸｽ・ｾﾐｺﾝﾀﾞｸﾀｰ株式会社 代表例 TOREX SEMICONDUCTOR LTD. 工程記号 No. 工程名 Flow Process 1 ｳｴﾊ受入 ◇ Wafer incoming 2 酸化 ○ Oxide 3 酸化膜ﾁｪｯｸ
|
Original
|
PDF
|
USP-8A01)
|
marking SMD crystal CODES
Abstract: Q 8,0-JXG75P2-12-30/100-T3-LF JTX310 Q25,0-SMU4-18-30/50-FU-LF JAUCH Quartz Crystals 16 Mhz Q8.0-SMU4-18-30/50-T1-LF
Text: F REQUENCY C ONTROL P RODUCTS JAUCH QUARTZ CRYSTALS individual working copy 03/11/14 THE SPECIALIST FOR FREQUENCY CONTROL PRODUCTS The Specialist for frequency control products Worldwide Presence expert advice by quartz crystal specialists Technical Customer Support
|
Original
|
PDF
|
JXG32P4
JXG53P4
JXG53P2
D-78056
marking SMD crystal CODES
Q 8,0-JXG75P2-12-30/100-T3-LF
JTX310
Q25,0-SMU4-18-30/50-FU-LF
JAUCH Quartz Crystals 16 Mhz
Q8.0-SMU4-18-30/50-T1-LF
|
IVT2200K
Abstract: No abstract text available
Text: IT2200K -SMD Temperature Compensated Crystal Oscillators - SMD TCXO using analogue ASIC for compensation and an optional Enable/Disable pin for efficient power management. - Product description -The I V T2200K employs an analogue ASIC for the oscillator and a high order temperature
|
Original
|
PDF
|
IT2200K
T2200K
IVT2200K
|
SMQ JAUCH
Abstract: JXG84P2 8A000
Text: SMD Quartz Crystal • JXG84P2 2 Pad Version · 8.0 x 4.5 mm RoHS • automotive temperature range available ■ reflow soldering temperature: 260 °C max. ■ ceramic package actual size General Data 2002/95/EC RoHS compliant Pb free: pins / pads ESR series resistance Rs
|
Original
|
PDF
|
JXG84P2
2002/95/EC
8a000
SMQ JAUCH
JXG84P2
8A000
|
8a000
Abstract: Jauch Quartz JXG75P4
Text: SMD Quartz Crystal • JXG75P4 4 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size automotive temperature range available high mechanical reliability type available reflow soldering temperature: 260 °C max. ceramic package RoHS 2002/95/EC RoHS compliant
|
Original
|
PDF
|
JXG75P4
2002/95/EC
8a000
8a000
Jauch Quartz
JXG75P4
|
JXG75P2
Abstract: No abstract text available
Text: SMD Quartz Crystal • JXG75P2 2 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package extended temperature ranges available high mechanical reliability type available for automotive type, see automotive datasheet RoHS 2002/95/EC
|
Original
|
PDF
|
JXG75P2
2002/95/EC
JXG75P2
8a000
|
JXG75P4
Abstract: No abstract text available
Text: SMD Quartz Crystal • JXG75P4 4 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package extended temperature ranges available high mechanical reliability type available for automotive type, see automotive datasheet RoHS 2002/95/EC
|
Original
|
PDF
|
JXG75P4
2002/95/EC
8a000
JXG75P4
|
JXG75P2
Abstract: No abstract text available
Text: Quartz Crystal • JXE• JXG75P2 63 Automotive SMD Crystal 2 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package all versions are AEC-Q200 qualified HMR version with extended shock & vibration immunity RKE version withstands 100x drop test from 150 cm
|
Original
|
PDF
|
JXG75P2
AEC-Q200
2002/95/EC
8a000
JXG75P2
|
JXE75-1
Abstract: JXE 32 JXE75/2 JXE75 SMQ Series quartz 12 MHz SMQ JAUCH
Text: JXE 75 Quartz Crystal • JXE75 Surface Mount Quartz Crystal actual size Features • RoHS compliant ■ ceramic/ceramic package General Data ESR series resistance Rs type JXE75 frequency range frequency vibration ESR max. ESR typ. 6.00 ~ 60.0 MHz ( fund. AT-cut )
|
Original
|
PDF
|
JXE75
8a000
JXE75-1
JXE 32
JXE75/2
JXE75
SMQ Series
quartz 12 MHz
SMQ JAUCH
|
JXG75P4
Abstract: No abstract text available
Text: Quartz Crystal • JXE• JXG75P4 63 Automotive SMD Crystal 4 Pad Version · 7.0 x 5.0 mm • ■ ■ ■ actual size glass sealed ceramic package all versions are AEC-Q200 qualified HMR version with extended shock & vibration immunity RKE version withstands 100x drop test from 150 cm
|
Original
|
PDF
|
JXG75P4
AEC-Q200
2002/95/EC
8a000
JXG75P4
|
8XC251SB
Abstract: 8XC251 8XC251SA 8XC251SP 8XC251SQ 272617 intel DOC 272795 A5028-02
Text: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: September, 1996 Order Number 272836-003 The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from published specifications are documented in
|
Original
|
PDF
|
8XC251Sx
8XC251SA,
8XC251Sx
74F541;
8XC251SB
8XC251
8XC251SA
8XC251SP
8XC251SQ
272617
intel DOC
272795
A5028-02
|
A5028
Abstract: 8xC251SX 272617 8XC251 step 8XC251 8XC251SA 8XC251SB 8XC251SP 8XC251SQ intel DOC
Text: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: July, 1997 Order Number: 272836-004 The 8XC251Sx may contain design defects or errors known as errata which may cause the 8XC251Sx to deviate from published specifications. Current characterized
|
Original
|
PDF
|
8XC251Sx
8XC251SA,
8XC251Sx
74F541;
A5028
272617
8XC251 step
8XC251
8XC251SA
8XC251SB
8XC251SP
8XC251SQ
intel DOC
|
8XC251
Abstract: 8XC251SA 8XC251SB 8XC251SP 8XC251SQ 272617 intel DOC
Text: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: June, 1998 Order Number: 272836-005 Notice: The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from
|
Original
|
PDF
|
8XC251Sx
8XC251SA,
8XC251Sx
74F541;
8XC251
8XC251SA
8XC251SB
8XC251SP
8XC251SQ
272617
intel DOC
|
|
|
8XC251
Abstract: 8XC251SA 8XC251SB 8XC251SP 8XC251SQ 272617 272936 intel DOC
Text: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: September, 1998 Order Number: 272836-006 Notice: The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from
|
Original
|
PDF
|
8XC251Sx
8XC251SA,
8XC251Sx
74F541;
8XC251
8XC251SA
8XC251SB
8XC251SP
8XC251SQ
272617
272936
intel DOC
|
8xC251SX
Abstract: 8XC251SP 272617 87C251* errata 8XC251SA/SB/SP/SQ Embedded Microcontroller 8XC251SQ 8XC251 8XC251SA 8XC251SB intel DOC
Text: 8XC251Sx 8XC251SA, SB, SP, SQ SPECIFICATION UPDATE Release Date: December, 1998 Order Number: 272836-007 Notice: The 8XC251Sx may contain design defects or errors known as errata. Characterized errata that may cause the 8XC251Sx’s behavior to deviate from
|
Original
|
PDF
|
8XC251Sx
8XC251SA,
8XC251Sx
8XC251SB
8XC251SP
272617
87C251* errata
8XC251SA/SB/SP/SQ Embedded Microcontroller
8XC251SQ
8XC251
8XC251SA
intel DOC
|
Untitled
Abstract: No abstract text available
Text: TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A02-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1
|
Original
|
PDF
|
TPCA8A02-H
|
Untitled
Abstract: No abstract text available
Text: TPCA8A01-H ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type Ultra-High-Speed U-MOS Ⅲ TPCA8A01-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm
|
Original
|
PDF
|
TPCA8A01-H
|
8A02-H
Abstract: No abstract text available
Text: TPCA8A02-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A02-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1
|
Original
|
PDF
|
TPCA8A02-H
8A02-H
|
TPCA 8a04
Abstract: 8A04h TPCA8A04-H
Text: TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.5 ± 0.1 Small gate charge: QSW = 13.4 nC (typ.)
|
Original
|
PDF
|
TPCA8A04-H
TPCA 8a04
8A04h
TPCA8A04-H
|
8A05
Abstract: No abstract text available
Text: TPCA8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCA8A05-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 1.27 0.4 ± 0.1 8 • Low drain-source ON-resistance: RDS (ON) = 9.2 mΩ (typ.)
|
Original
|
PDF
|
TPCA8A05-H
8A05
|
s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
|
Original
|
PDF
|
S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
|
TPCC8A01-H
Abstract: No abstract text available
Text: TPCC8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type U-MOS V-H TPCC8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Built-in a Schottky barrier diode
|
Original
|
PDF
|
TPCC8A01-H
TPCC8A01-H
|
2SK2391
Abstract: No abstract text available
Text: TO SHIBA 2SK2391 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2391 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS r 4V Gate Drive
|
OCR Scan
|
PDF
|
2SK2391
ID-27A
|
